MSM51V17800 Search Results

MSM51V17800

Abstract: MSM51V17800DSL
Contextual Info: Pr E2G0127-17-61 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800D/DSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17800D/DSL achieves high integration, high-speed operation,

Contextual Info: FJDD51V17800F-01 1電子デバイス MSM51V17800F 今回作成：2001 年 1 月 前回作成： 2,097,152-Wordx8-Bit DYNAMIC RAM : 高速ページモード • 概要 MSM51V17800F はCMOS プロセス技術を用いた 2,097,152 ワード×8 ビット構成のダイナミックラ

tsop 338 IR

Contextual Info: O K I Semiconductor MSM51V17800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V17800 is a 2,097,152-w ord x 8-bit dynam ic RA M fabricated in OKI's CM O S silicon gate technology. The M SM 51V17800 achieves high integration, high-speed operation, and low-power

MSM51V17800F

Abstract: MSM51V17800
Contextual Info: FEDD51V17800F-01 1Semiconductor MSM51V17800F This version: January. 2001 Previous version :  2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800F is a 2,097,152-word × 8-bit dynamic RAM fabricated in Oki’s silicon-gate

Contextual Info: O K I Semiconductor MSM51V17800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800 is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17800 achieves high integration, high-speed operation, and low-power

Contextual Info: E2G0127-17-61 O K I Semiconductor This version: Mar. 1998 M SM 51V17800D/DSL 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI7800D /DSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17800D/DSL achieves high integration, high-speed operation,

MSM51V17800

Abstract: J00j
Contextual Info: O K I Semiconductor MSM5 1 V17800_ 2,097,152-Word x 8-B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V17800 is OKI's CMOS silicon gate process technology.

Contextual Info: J2G0127-17-61 作成：1998年 3月 ¡ 電子デバイス MSM51V17800D/DSL l 暫定 MSM51V17800D/DSL 2,097,152-Wordx8-Bit DYNAMIC RAM：高速ページモード n 概要 MSM51V17800D/DSLはCMOSプロセス技術を用いた2,097,152ワ−ド×8ビット構成のダイナミックラ

Contextual Info: O K I Semiconductor MSM51 V17800 A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17800A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V17800A is

MSM51V17800DSL

Contextual Info: E2G0127-17-61 Semiconductor O KI M SM51V17800D/DSL 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V17800D/DSL is a 2,097,152-word x 8-bit dynamicRAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17800D/DSL achieves high integration, high-speed operation,

Contextual Info: O K I Semiconductor MSM51V17800A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17800A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V17800A is

Contextual Info: O K I Semiconductor MSM51V17800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V17800 is OKI's CMOS silicon gate process technology.

msm51v17800b

Contextual Info: ¡ Semiconductor MSM51V17800B/BSL ¡ Semiconductor MSM51V17800B/BSL E2G0076-17-41 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800B/BSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17800B/BSL achieves high integration, high-speed operation, and

MSM51V17800F

Abstract: MSM51V17800
Contextual Info: PEDD51V17800F-01 1Semiconductor MSM51V17800F This version: May. 2000 Previous version :  Preliminary 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800F is a 2,097,152-word × 8-bit dynamic RAM fabricated in Oki’s silicon-gate

Dynamic Memory Refresh Controller

Contextual Info: J2G0076-17-41 作成：1998年 1月 MSM51V17800B/BSL l 前回作成：1997年 5月 ¡ 電子デバイス MSM51V17800B/BSL 2,097,152-Wordx8-Bit DYNAMIC RAM：高速ページモード n 概要 MSM51V17800B/BSLはCMOSプロセス技術を用いた2,097,152ワ−ド×8ビット構成のダイナミックラ

Contextual Info: O K I Semiconductor E 2 G 0 0 7 6 -1 7 -4 1 MSMS1V17800B/BSL 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17800B/BSL achieves high integration, high-speed operation, and

msm51v17800b

Abstract: MSM51V17800 SOJ28 bsl 100
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

m51171

Contextual Info: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.

Bv 42 transistor

Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

MSM5117180-70

Abstract: MSM5117180-80
Contextual Info: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.

DRAMs

Abstract: MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c
Contextual Info: OKI Semiconductor DRAMs 1-Meg DRAMs 5 V Part Number Description Organization Pins / Package Access Time Max (ns) MSM511664B-xx Fast page 64K x 16 40 / DIP 70, 80 MSM514256C-xx Fast page 256K x 4 60, 70, 80 MSM514256CL-xx Fast page, low-power 20 / DIP, ZIP

DD1750

Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.

MSM51V17800F

Abstract: MSM51V17800
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

msm514260c

Abstract: MSM514256C edo 16m x 32
Contextual Info: E2G0004-17-42 Product Overview O K I Semiconductor Product Overview DRAM H H 5V 1M xT~1— I MSM5110OOC/CL H 256K X 4 1— I MSM514256C/CL j 128K X 8 h i MSM518126/L MSM518128/L I 64K X 16 M MSM511664C/CL MSM511666C/CL 2M~~hj 2M X 1 I— I M 3M 512100/T 1M X 2 I— ì MSM512200/L~