TRANSISTOR BD132 Search Results

TRANSISTOR BD132 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BD132 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
bd132 equivalent Abstract: BD132 MAR 745 TRANSISTOR BD131 transistor TO-126 Outline Dimensions BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD132 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification PNP power transistor	Original	M3D100 BD132 O-126; BD131. MAM272 O-126. SCA53 117047/00/02/pp8 bd132 equivalent BD132 MAR 745 TRANSISTOR BD131 transistor TO-126 Outline Dimensions BP317	PDF
MAR 733 Abstract: BD131 MAR 745 TRANSISTOR Q 817 BD132 BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification NPN power transistor	Original	M3D100 BD131 O-126; BD132. MAM254 O-126. SCA53 117047/00/02/pp8 MAR 733 BD131 MAR 745 TRANSISTOR Q 817 BD132 BP317	PDF
automotive ignition tip162 Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —	Original	BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000	PDF
MJE15020 Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment	Original	MJE340 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJE15020 DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698	PDF
BUS48AP Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD166 BD165 BD166 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUS48AP 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10	PDF
BU108 Abstract: 2SC1629 equivalent BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:	Original	BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100	PDF
BU108 Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:	Original	BU522B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773	PDF
7430 ic data sheet Abstract: BD131 2108 npn transistor bd131 equivalent BD132 BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN power transistor BD131 FEATURES PINNING • High current max. 3 A	Original	M3D100 BD131 O-126; BD132. MAM254 SCA63 115002/00/03/pp8 7430 ic data sheet BD131 2108 npn transistor bd131 equivalent BD132 BP317	PDF
BU208A equivalent Abstract: BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ13333  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching	Original	MJ13333 MJ13333 AMP32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU208A equivalent BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330	PDF
D42C5 Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is	Original	MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220	PDF
2SD418 Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,	Original	MJ10000 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SD418 TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023	PDF
BU108 Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD180 BD179 BD180 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631	PDF
BU108 Abstract: BDT3 2SC1943 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching	Original	MJE8503A* MJE8503A WATT32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 BDT3 2SC1943 2SC1419 BU326 BU100	PDF
2N3055 equivalent transistor NUMBER Abstract: bd139 equivalent transistor MJE350 equivalent 2n6284 equivalent TIP152 equivalent MJE371 equivalent bd139 equivalent bd139 3v BUL45 equivalent BU108 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1320  Data Sheet Designer's NPN Silicon Power Transistor Switchmode Series This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for	Original	MJE1320 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N3055 equivalent transistor NUMBER bd139 equivalent transistor MJE350 equivalent 2n6284 equivalent TIP152 equivalent MJE371 equivalent bd139 equivalent bd139 3v BUL45 equivalent BU108	PDF

2SA1046 Abstract: transistor bc 851 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2N6107 equivalent BU326 BU108 BU100 BUL1 2N3055 BDV64 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH51 Advance Information SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers.	Original	BUH51 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SA1046 transistor bc 851 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2N6107 equivalent BU326 BU108 BU100 BUL1 2N3055 BDV64	PDF
bd132 Abstract: transistor ALG 20 Text: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter	OCR Scan	BD132 OT-32 BD131. bbS3T31 0D34251 BD131 BD132 bb53T31 transistor ALG 20	PDF
transistor h44 Abstract: BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32 Text: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE D A T A Collector-base voltage open em itter Collector-em itter voltage (open base)	OCR Scan	BD132 OT-32 BD131. O-126 OT-32) 00342SM transistor h44 BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32	PDF
BD131 Abstract: BD131A V4020 Text: BD131 J v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic package fo r general purpose, m edium pow er applications. P-N-P com plem ent is BD132. QUICK REFERENCE D ATA Collector-base voltage open e m itte r	OCR Scan	BD131 OT-32 BD132. BD131 BD131A V4020	PDF
Untitled Abstract: No abstract text available Text: BD131 _ y v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter	OCR Scan	BD131 OT-32 BD132. DD34243 BD132 003424b	PDF
d1694 Abstract: transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv Text: BD131 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. P-N-P complement is BD132. Q U IC K R E F E R E N C E D A T A VCBO max. 70 V Collector-emitter voltage open base	OCR Scan	BD131 OT-32 BD132. O-126 OT-32) 345l4b d1694 transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv	PDF
BD132 Abstract: BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GDM2770 GQM2771 IEC134 transistor af 126 d5224 transistor Bd132 Text: BD132 P HILIPS I N T E R N A T I O N A L SbE D • 711Dfl2b G D I42770 T*i7 M P H I N r-33-^r SILICON PLANAR EPITAXIAL POW ER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131.	OCR Scan	BD132 711002b GDM2770 OT-32 BD131. O-126 OT-32) BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GQM2771 IEC134 transistor af 126 d5224 transistor Bd132	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
BD131 Abstract: D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132 Text: PHIL I P S I N T E R N A T I O N A L SbE D • 711 0 05 b QCm2 7 bO 04Ô « P H I N r - 3 3 - ò / SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132.	OCR Scan	BD131 711005b Q0427faD OT-32 BD132. O-126 OT-32) D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS BD131 NPN power transistor 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN power transistor BD131 FEATURES PINNING • High current max. 3 A	OCR Scan	BD131 BD131 BD132. 115002/00/03/pp8	PDF

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TRANSISTOR BD132 Search Results

TRANSISTOR BD132 Result Highlights (5)

TRANSISTOR BD132 Datasheets Context Search

bd132 equivalent

MAR 733

automotive ignition tip162

MJE15020

BUS48AP

BU108

BU108

7430 ic data sheet

BU208A equivalent

D42C5

2SD418

BU108

BU108

2N3055 equivalent transistor NUMBER

2SA1046

bd132

transistor h44

BD131

Untitled

d1694

BD132

y51 h 120c

BD131

Untitled