TRANSISTOR BD533 Search Results

TRANSISTOR BD533 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BD533 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
tip122 tip127 audio board Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920 Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents	Original	Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
BD536 Abstract: No abstract text available Text: BD533 BD535 BD537 BD534 BD536 Complementary power transistors Features • . BD533, BD535, and BD537 are NPN transistors Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain	Original	BD533 BD535 BD537 BD534 BD536 BD533, BD535, BD537 BD536. BD536	PDF
BD536 Abstract: BD534 BD537 BD535 BD533 JESD97 BD533 st Text: BD533 BD535 BD537 BD534 BD536 Complementary power transistors Features • . BD533, BD535, and BD537 are NPN transistors Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain	Original	BD533 BD535 BD537 BD534 BD536 BD533, BD535, BD537 BD536. BD536 JESD97 BD533 st	PDF
BD533FI Abstract: BD534FI Text: BD533FI BD534FI COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533FI, is a silicon epitaxial-base NPN transistor mounted in ISOWATT220 plastic package. They are inteded for use in medium power linear and switching applications.	Original	BD533FI BD534FI BD533FI, ISOWATT220 BD534FI. ISOWATT220 BD533F BD534F BD533FI BD534FI	PDF
BD534FP Abstract: BD533FP Text: BD533FP BD534FP COMPLEMENTARY SILICON POWER TRANSISTORS • ■ ■ BD534FP IS SGS-THOMSON PREFERRED SALESTYPE FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION U.L. COMPLIANT DESCRIPTION The BD533FP is silicon epitaxial-base NPN power transistor in Jedec TO-220FP fully molded	Original	BD533FP BD534FP BD534FP BD533FP O-220FP BD534FP. O-220FP	PDF
TO-220FP JEDEC Abstract: BD533FP BD534FP Text: BD533FP BD534FP COMPLEMENTARY SILICON POWER TRANSISTORS • ■ ■ BD534FP IS SGS-THOMSON PREFERRED SALESTYPE FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION U.L. COMPLIANT DESCRIPTION The BD533FP is silicon epitaxial-base NPN power transistor in Jedec TO-220FP fully molded	Original	BD533FP BD534FP BD534FP BD533FP O-220FP BD534FP. O-220FP TO-220FP JEDEC	PDF
bd534 Abstract: transistor b 536 bd538 Text: BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD533, BD535 and BD537 respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	BD534/536/538 BD533, BD535 BD537 O-220 BD534 BD536 BD538 bd534 transistor b 536 bd538	PDF
BD533 Abstract: BD534 BD535 BD536 BD537 BD538 Text: BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD533, BD535 and BD537 respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	BD534/536/538 BD533, BD535 BD537 O-220 BD534 BD536 BD538 BD533 BD534 BD536 BD538	PDF
BD533 Abstract: BD537 BD538 BD534 BD535 BD536 Text: BD533/535/537 BD533/535/537 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD534, BD536 and BD538 respectively TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	BD533/535/537 BD534, BD536 BD538 O-220 BD533 BD535 BD537 BD533 BD537 BD534 BD535	PDF
1308 ic Abstract: bd533 Text: BD533/535/537 BD533/535/537 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD534, BD536 and BD538 respectively 1 TO-220 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	BD533/535/537 BD534, BD536 BD538 O-220 BD533 BD535 BD537 1308 ic bd533	PDF
TRANSISTOR BD538 Abstract: No abstract text available Text: BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD533, BD535 and BD537 respectively 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	BD534/536/538 BD533, BD535 BD537 O-220 BD534 BD536 BD538 TRANSISTOR BD538	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF

Untitled Abstract: No abstract text available Text: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • Complement to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Symbol Collector Emitter Voltage : BD533	OCR Scan	BD533/535/537_ BD534, BD536 BD538 BD533 BD535 BD537	PDF
BD533 Abstract: BD537 TRANSISTOR BD533 BD534 BD535 BD536 BD538 101b1 60V transistor npn 2a switching applications Text: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD534, BD 536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD535 60 V : BD537	OCR Scan	BD533/535/537 BD534, BD536 BD538 BD533 BD535 BD537 BD537 TRANSISTOR BD533 BD534 BD535 101b1 60V transistor npn 2a switching applications	PDF
TRANSISTOR BD533 Abstract: BD533 BD534 BD535 BD536 BD537 BD538 60V transistor npn 2a 60V transistor npn 2a switching applications Text: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD534, BD 536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD535 60 V : BD537	OCR Scan	BD533/535/537 BD534, BD536 BD538 BD533 BD535 BD537 TRANSISTOR BD533 BD534 BD535 BD537 60V transistor npn 2a 60V transistor npn 2a switching applications	PDF
Untitled Abstract: No abstract text available Text: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD533, BD 535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 45 V : BD536 - 60 V : BD538	OCR Scan	BD534/536/538 BD533, BD537 BD536 BD538 BD534	PDF
TRANSISTOR 536 Abstract: 536 transistor BD538 TRANSISTOR BD538 BD536 BD534 BD533 BD535 BD537 IC-101 FAIRCHILD Text: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD533, BD 535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit -4 5 V : BD536 - 60 V : BD538	OCR Scan	BD534/536/538 BD533, BD535 BD537 BD534 BD536 BD538 TRANSISTOR 536 536 transistor BD538 TRANSISTOR BD538 BD536 BD533 IC-101 FAIRCHILD	PDF
Transistor B C 458 Abstract: c 458 c transistor 60V transistor npn 2a switching applications bd533 Transistor n 535 Text: BD533/535/537 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE TO-220 • Com plem ent to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C olle ctor Base Voltage C olle ctor Em itter Voltage	OCR Scan	BD533/535/537 BD534, BD536 BD538 O-220 BD533 BD535 BD537 Transistor B C 458 c 458 c transistor 60V transistor npn 2a switching applications Transistor n 535	PDF
Untitled Abstract: No abstract text available Text: / I T SGS-THOMSON Ä 7# RaDeæi[Liero iDei BD533FI BD534FI COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533FI, is a silicon epitaxial-base NPN transistor mounted in ISOWATT22C plastic package. They are inteded for use in medium power linear	OCR Scan	BD533F BD534F BD533FI, ISOWATT22C) BD534FI. BD533FI BD534FI	PDF
TRANSISTOR 536 Abstract: transistor b 536 BD 534 536 transistor BD 536 TRANSISTOR 538 BD538C transistor k 538 Text: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE TO -220 • Complement to BD533, BD535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B ase V o lta g e Symbol	OCR Scan	BD534/536/538 BD533, BD535 BD537 BD534 BD536 BD538 300/iS. TRANSISTOR 536 transistor b 536 BD 534 536 transistor BD 536 TRANSISTOR 538 BD538C transistor k 538	PDF
transistor 536 Abstract: TRANSISTOR BD538 BD 534 Text: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD533, BD535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector Em itter Voltage S ym bol	OCR Scan	BD534/536/538 BD533, BD535 BD537 BD536 BD538 transistor 536 TRANSISTOR BD538 BD 534	PDF
BD534FI Abstract: BD533FI Text: r z T SGS-THOMSON Ä T # M » IL [Iig M e t BD533FI BD534FI COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533FI, is a silicon epitaxial-base NPN transistor mounted in ISOWATT220 plastic package. They are inteded for use in medium power linear	OCR Scan	BD533FI BD534FI BD533FI, ISOWATT220 BD534FI. BD533FI D533FI/B D534H BD534FI	PDF

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TRANSISTOR BD533 Search Results

TRANSISTOR BD533 Result Highlights (5)

TRANSISTOR BD533 Datasheets Context Search

tip122 tip127 audio board

BUV48I

BD536

BD536

BD533FI

BD534FP

TO-220FP JEDEC

bd534

BD533

BD533

1308 ic

TRANSISTOR BD538

y51 h 120c

sx3704

Untitled

BD533

TRANSISTOR BD533

Untitled

TRANSISTOR 536

Transistor B C 458

Untitled

TRANSISTOR 536

transistor 536

BD534FI