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    TRANSISTOR BF 37 Search Results

    TRANSISTOR BF 37 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BF 37 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Qs.iis.ij ^Ss-mL-donductoi lArooucfi, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF416 *BF418 PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNPSILICIUM, PLANAR EPITAXIAL Compl. of BF 415 and BF 417


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    PDF BF416 BF418 -25mA) -250V -300V 70MHz O-126- CB-16

    bf417

    Abstract: Bf 417 g transistor
    Text: <^£.mL-dondu<itoi LPioaucti, L/nc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF415 *BF417 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL Compl. of BF 416 and BF 418


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    PDF BF415 BF417 JO-126- CB-16 bf417 Bf 417 g transistor

    marking code g1s

    Abstract: Q62702-F1129 D 998 TRANSISTOR
    Text: Silicon N Channel MOSFET Tetrode BF 998 Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO


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    PDF Q62702-F1129 OT-143 marking code g1s Q62702-F1129 D 998 TRANSISTOR

    marking code g1s

    Abstract: Q62702-F1771 VPS05178 marking G2s
    Text: BF 2000 Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor with high S/C quality factor 4 • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code Pin Configuration BF 2000 NDs 1=S Q62702-F1771


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    PDF Q62702-F1771 VPS05178 OT-143 marking code g1s Q62702-F1771 VPS05178 marking G2s

    BF998

    Abstract: marking code GL Q62702-F1129 d 998 transistor circuit
    Text: Silicon N Channel MOSFET Tetrode ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz BF 998 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO Q62702-F1129


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    PDF Q62702-F1129 OT-143 BF998 marking code GL Q62702-F1129 d 998 transistor circuit

    BFR93

    Abstract: bfr93a R93A
    Text: BFR93 BFR93A SMALL SIGNAL NPN RF TRANSISTOR • ■ ■ Type Marking BF R93 R1 BFR93A R2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GOLD METALLIZED TRANSISTOR FOR HIGH GAIN AND LOW NOISE,


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    PDF BFR93 BFR93A OT-23 bfr93a R93A

    BFR92

    Abstract: BFR92A BFR92 transistor transistor p2 marking
    Text: BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR • ■ ■ Type Marking BF R92 P1 BFR92A P2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GOLD METALLIZED TRANSISTOR FOR HIGH GAIN AND LOW NOISE,


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    PDF BFR92 BFR92A OT-23 BFR92A BFR92 transistor transistor p2 marking

    transistor bc 7-40

    Abstract: No abstract text available
    Text: <£&ml- lon£Luctoi tPicxLct}., fine. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN SILICON PLANAR EPITAXIAL THANSISTOB BF 173 THE BP173 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR


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    PDF BP173 200mA 35MHz transistor bc 7-40

    2SA1527

    Abstract: 9600M
    Text: 2SA1527 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter IS 6.115a BF 370.0 NF 999.0m VAF 54.0 IKF 960.0m ISE 1.50p NE 2.00 BR 30.0 NR 1.00 VAR 30.0 IKR 30.90m R1 5.50k Unit Parameter Value Unit A ISC NC RB IRB RBM RE RC XTB


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    PDF 2SA1527 27deg 2SA1527 9600M

    BF199

    Abstract: BF 234 transistor BP317 data bf199 transistor NPN BF199
    Text: 00-07-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-048-21 BF 199 trans DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF199 NPN medium frequency transistor


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    PDF M3D186 BF199 SCA55 117047/00/02/pp8 BF199 BF 234 transistor BP317 data bf199 transistor NPN BF199

    BF506

    Abstract: No abstract text available
    Text: leiizu ^E.mi-C-ondu.cko'i O^ioaueti, Una. CX !_/ TELEPHONE: (973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 BF506 FAX: (973) 376-8960 SILICON PLANAR PNP VHP OSCILLATOR MIXER The BF 506 is a silicon planar epitaxial PNP transistor in Jedec TO-92 plastic package.


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    PDF BF506 BF506

    2sd1048

    Abstract: 5620P BR 101 Transistor 450nr 2200F
    Text: 2SD1048 SPICE PARAMETER NPN SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter IS 220.0f BF 370.0 NF 1.01 VAF 25.0 IKF 590.0m ISE 90.00f NE 1.50 BR 45.0 NR 1.00 VAR 20.0 IKR 100.9m Unit Parameter Value Unit A ISC NC RB IRB RBM RE RC XTB EG XTI 5.620p


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    PDF 2SD1048 27deg 2sd1048 5620P BR 101 Transistor 450nr 2200F

    k d 998 0

    Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
    Text: BF 998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF VPS05178 OT-143 Res00 EHT07305 EHT07306 Oct-26-1999 k d 998 0 transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998

    gummel

    Abstract: TRANSISTOR 1F 2SC3649
    Text: 2SC3649 SPICE PARAMETER SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter IS 375.4f 200.8 BF 999.8m NF 4 VAF IKF 288.2m ISE 326.1f 1.479 NE 50 BR NR 1 VAR 49 IKR 30.00m Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value 500.0p 2


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    PDF 2SC3649 27deg gummel TRANSISTOR 1F 2SC3649

    bf579

    Abstract: No abstract text available
    Text: SIEM EN S PNP Silicon RF Transistor BF 579 • For low-distortion, low-noise VHF/UHF amplifier and UHF oscillator applications in TV tuners • Typical collector current 10 mA Type Marking Ordering Code tape and reel BF 579 LJ Q62702-F971 Pin Co nfigural ion


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    PDF Q62702-F971 OT-23 0B3Sb05 B235b05 bf579

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BF 554 NPN Silicon RF Transistor • For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type Marking Ordering Code tape and reel BF 554 CC Q62702-F1042 Pin Co nfigural ion 1 2 3 B E Package1) C SOT-23


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    PDF Q62702-F1042 OT-23 S35hDS fl235bDS

    s22b

    Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
    Text: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­


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    PDF BF181 s22b bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B

    TFK 840

    Abstract: BF167 TRANSISTOR tfk 840 TFK 105 A1187 AMB-45
    Text: BF 167 Silizium-NPN-Planar-HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: G eregelte FS-ZF-Verstärkerstufen in Em itterschaltung Applications: C ontrolled video IF am plifier stages in com m on em itter configuration Besondere Merkmale: Features:


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 770A NPN Silicon RF Transistor F eature • For IF am p lifiers in T V -sa t tuners and for VC R m odulators E S D : E le ctro sta tic d isch a rg e sensitive device, o b se rve handling p recautions! T yp e ^ M arking j BF 770 A ' IS O rd erin g C o d e


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    bf679t

    Abstract: transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor
    Text: c TELEFUNKEN ELECTRONIC fllC D a^SDD^b 00G542E 7 • A L 6 Û S 679 T • BF 679 T TtllLtltFOJMIXilMl electronic Creative Technologies _ t - 3 / - / r Silicon PNP RF Transistor Applications: Gain controlled UHF/VHF input stages


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    PDF 00G542E 569-GS bf679t transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon RF Transistor BF 550 • For common emitter amplifier stages up to 300 MHz • For mixer applications in AM/FM radios and VHF TV tuners • Low feedback capacitance due to shield diffusion • Controlled low output conductance Type Marking


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    PDF Q62702-F944 OT-23 fl23SbDS 00bb7fi EHTG7054

    J3005

    Abstract: BF311 transistor BF 37 transistor marking ra marking code YA Transistor U16020
    Text: ö le D TELEFUNKEN ELECTRONIC • a^soQ^b o o o s m 'W BF 311 TidtifpyKlKilMl electronic T - z t - t f Creative Tech nologïes Silicon NPN Epitaxial Planar RF Transistor I Applications; Video IF amplifier stages configuration, especially in video IF power stages


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    PDF 569-GS J3005 BF311 transistor BF 37 transistor marking ra marking code YA Transistor U16020

    d 998 transistor circuit

    Abstract: No abstract text available
    Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998


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    PDF Q62702-F1129 T-143 M27ol BB5151 J8B515 d 998 transistor circuit

    zq 405-MF

    Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
    Text: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF 23b320 BFP193 62702-F OT-143 zq 405-MF siemens 30 090 GP 819 SAA 1006 saa 1070