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    TRANSISTOR BF 425 Search Results

    TRANSISTOR BF 425 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BF 425 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFR93

    Abstract: bfr93a R93A
    Text: BFR93 BFR93A SMALL SIGNAL NPN RF TRANSISTOR • ■ ■ Type Marking BF R93 R1 BFR93A R2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GOLD METALLIZED TRANSISTOR FOR HIGH GAIN AND LOW NOISE,


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    BFR93 BFR93A OT-23 bfr93a R93A PDF

    TRANSISTOR 636

    Abstract: pnp transistor d 640 BC63B 639 TRANSISTOR PNP transistor BC 638 transistor BC 635 bc 640 bc638 638 transistor transistor BC 639
    Text: BC 636 g Q 638 PNP S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR PNP S ILIC IU M , PLA N A R E P IT A X IA L BC 640 Compl. of BC 635, BC 637, BC 639 - Driver stages of audio amplifiers " " Etages Drivers d'am plificateurs BF Maximum power dissipation


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    150mA) CB-76 TRANSISTOR 636 pnp transistor d 640 BC63B 639 TRANSISTOR PNP transistor BC 638 transistor BC 635 bc 640 bc638 638 transistor transistor BC 639 PDF

    ULN2003NA

    Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
    Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module


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    TD62M TD62C TD/TB62 N29B3a 54S63PA 54597p 54598PÜ 2786A UDN2580a ULN2003NA transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P PDF

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    PDF

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


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    B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16 PDF

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


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    AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700 PDF

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5 PDF

    laser diode spice modeling

    Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
    Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these


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    42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136 PDF

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


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    O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846 PDF

    LCS702

    Abstract: LCS701 LCS708 LCS705 32 inch LCD LG TV SCHEMATIC lcs700 S2C71 LCS700-708 lg lcd tv POWER SUPPLY SCHEMATIC PI-6764-051412
    Text: LCS700-708 HiperLCS Family Integrated LLC Controller, High-Voltage Power MOSFETs and Drivers Product Highlights Features • LLC half-bridge power stage incorporating controller, high and low-side gate drives, and high-voltage power MOSFETs • Eliminates up to 30 external components


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    LCS700-708 LCS702 LCS701 LCS708 LCS705 32 inch LCD LG TV SCHEMATIC lcs700 S2C71 lg lcd tv POWER SUPPLY SCHEMATIC PI-6764-051412 PDF

    54B65

    Abstract: 596B5
    Text: MLX90121 13.56MHz RFID Transceiver Features and Benefits 1 1 1 1 Applications 1 Conforms with ISO14443B Conforms with ISO15693 Programmable encoder and decoder Low external component count (1) RATP / Innovatron 1 1 1 1 Portable data terminals Access control readers


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    MLX90121 56MHz ISO14443B ISO15693 DAA-000 MLX90121EFR-DAA-000-RE ISO14001 54B65 596B5 PDF

    Untitled

    Abstract: No abstract text available
    Text: LCS700-708 HiperLCS Family Integrated LLC Controller, High-Voltage Power MOSFETs and Drivers Product Highlights Features • LLC half-bridge power stage incorporating controller, high and low-side gate drives, and high-voltage power MOSFETs • Eliminates up to 30 external components


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    LCS700-708 ov5-471-1021 PDF

    Untitled

    Abstract: No abstract text available
    Text: HA16811ANT/H A16811 AMP SLIC IC for PBX Applications Bipolar linear process monolithic SLIC IC for PBX applications »in Arrangement HA16811ANT Features • • • • • • • Basic Functions: Internal battery feed control B , loop supervi­ sion (S) and 2 W-4 W conversion


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    HA16811ANT/H A16811 HA16811ANT resist00 i----------------------500 PDF

    TRANSISTOR C 2577

    Abstract: C 2577 transistor UHF transistor GHz B 1566 Transistor MBC964 transistor equivalent 1047 9016 transistor Transistor B 1566 TRANSISTOR C 3198 marking 28 SOT323 uhf
    Text: Philips Semiconductors Product specification UHF wideband transistor PRF957 FEATURES PINNING • Small size PIN • Low noise 1 • Low distortion 2 emitter • High gain 3 collector DESCRIPTION base • Gold metallization ensures excellent reliability. CO


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    PRF957 OT323 MAM062 OT323) OT323. Jul23 TRANSISTOR C 2577 C 2577 transistor UHF transistor GHz B 1566 Transistor MBC964 transistor equivalent 1047 9016 transistor Transistor B 1566 TRANSISTOR C 3198 marking 28 SOT323 uhf PDF

    transistor npn bf 422

    Abstract: 1R002 431 capacitor NCC hitachi pbx ha16811
    Text: HA16811ANT/HA16811 AMP SLIC IC fo r PBX A pplications Bipolar linear process monolithic SLIC IC for PBX applications »in A rrangem ent HA16811ANT Features • • • • • • • • Basic Functions: Internal battery feed control B , loop supervi­ sion (S) and 2 W-4 W conversion


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    A16811ANT/H A16811 transistor npn bf 422 1R002 431 capacitor NCC hitachi pbx ha16811 PDF

    S4 78a DIODE schottky

    Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92 PDF

    CA3246m

    Abstract: CA3227 CA3227E CA3227M CA3227M96 CA3246 CA3246E CA3246M96
    Text: CA3227, CA3246 S E M I C O N D U C T O R High-Frequency N-P-N Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz March 1993 Features Description • Gain-Bandwidth Product fT > 3GHz The CA3227 and CA3246* consist of five general purpose


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    CA3227, CA3246 CA3227 CA3246* TA10854 TA10855, CA3227 CA3246m CA3227E CA3227M CA3227M96 CA3246 CA3246E CA3246M96 PDF

    RCA transistor 40410

    Abstract: RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410
    Text: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V


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    lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 RCA transistor 40410 RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Si-M M IC-Am plifier BGA 425 in SIEGET 25-Technologie Preliminary data • Multifunctional ease. 50 Cl block LNA / MIX • Unconditionally stable • Gain IS2-|I2 = 18.5 dB at 1.8 GHz (appl.1) gain IS21I2 = 22 dB at 1.8 GHz (appl.2) /p3out = +7 dBm at 1 8 GHz ( ^D=3V,/D=9.5mA)


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    25-Technologie IS21I2 OT-363 de/Semiconductor/products/35/35 235b05 fl535b05 015252t) PDF

    siemens transistor

    Abstract: SOT343 lna BGA 441 SIEMENS bga
    Text: SIEMENS Si-MMIC-Amplifier BGA 425 in SIEGET 25-Technologie Preliminary data • Multifunctional ease. 50 Q, block LNA / MIX • Unconditionally stable • Gain |S2-|2 = 18.5 dB at 1.8 GHz (appl.1) gain |S2-|2 = 22 dB at 1.8 GHz (appl.2) /P 3oUt = +7 dBm at 1.8 GHz (l/[j=3V,/D=9.5mA)


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    25-Technologie EHA0719J de/Semiconductor/products/35/35 siemens transistor SOT343 lna BGA 441 SIEMENS bga PDF

    667 transistor

    Abstract: 2208E
    Text: æ , CA3227 CA3246 h arfu s S E M I C O N D U C T O R M y M « * w High-Frequency N-P-N Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz March 1993 Features Description • G aln -B an d w ld th P roduct fT > 3G H z The CA3227 and CA3246" consist of five general purpose


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    CA3227 CA3246 CA3246" TA10S54 TA10855, CA3227, 667 transistor 2208E PDF

    2907A PNP bipolar transistors

    Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT PDF

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 PDF