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    TRANSISTOR BHD 15 Search Results

    TRANSISTOR BHD 15 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BHD 15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sf 128 transistor

    Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
    Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.


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    PDF SC73P2602 SC73P2602 SC73C16 sf 128 transistor TRANSISTOR SF 128 Triode 8050 marking P53 transistor ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47

    702 Z TRANSISTOR smd

    Abstract: 702 Z smd TRANSISTOR 702 TRANSISTOR smd TRANSISTOR SMD MARKING CODE 702 transistor smd marking KA 2sc5872 FR MARKING SMD TRANSISTOR 702 H transistor smd MARKING SMD IC CODE TRANSISTOR SMD MARKING CODE A1
    Text: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor


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    PDF HTT1129E REJ03G0840-0200 ADE-208-1541A) 2SC5849 2SC5872 PXSF0006LA-A 702 Z TRANSISTOR smd 702 Z smd TRANSISTOR 702 TRANSISTOR smd TRANSISTOR SMD MARKING CODE 702 transistor smd marking KA 2sc5872 FR MARKING SMD TRANSISTOR 702 H transistor smd MARKING SMD IC CODE TRANSISTOR SMD MARKING CODE A1

    transistor smd marking KA

    Abstract: 702 TRANSISTOR smd 2SC5700 2SC5849 HTT1127E HTT1127ERTL-E smd code marking for japanese MARKING CODE SMD IC HTT1127ERTL
    Text: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


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    PDF HTT1127E REJ03G0839-0100 ADE-208-1540) 2SC5700 2SC5849 PXSF0006LA-A transistor smd marking KA 702 TRANSISTOR smd 2SC5700 2SC5849 HTT1127E HTT1127ERTL-E smd code marking for japanese MARKING CODE SMD IC HTT1127ERTL

    transistor smd marking KA

    Abstract: No abstract text available
    Text: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


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    PDF HTT1127E REJ03G0839-0100 ADE-208-1540) 2SC5700 2SC5849 PXSF0006LA-A transistor smd marking KA

    Untitled

    Abstract: No abstract text available
    Text: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor


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    PDF HTT1129E REJ03G0840-0200 ADE-208-1541A) 2SC5849 2SC5872 PXSF0006LA-A

    702 TRANSISTOR smd

    Abstract: transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC
    Text: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor


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    PDF HTT1129E REJ03G0840-0200 ADE-208-1541A) 2SC5849 2SC5872 PXSF0006LA-A 702 TRANSISTOR smd transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC

    702 TRANSISTOR smd

    Abstract: TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 702 transistor smd marking KA MARKING CODE SMD IC FR MARKING SMD TRANSISTOR marking code e2 SMD Transistor TRANSISTOR SMD MARKING CODE A1 2SC5700 2SC5849
    Text: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


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    PDF HTT1127E REJ03G0839-0100 ADE-208-1540) 2SC5700 2SC5849 PXSF0006LA-A 702 TRANSISTOR smd TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 702 transistor smd marking KA MARKING CODE SMD IC FR MARKING SMD TRANSISTOR marking code e2 SMD Transistor TRANSISTOR SMD MARKING CODE A1 2SC5700 2SC5849

    MARKING CODE YA TRANSISTOR

    Abstract: 2SC5049 2SC5049YA-TL-E SC-59A RENESAS marking code package
    Text: 2SC5049 Silicon NPN Epitaxial REJ03G0740-0300 Previous ADE-208-1129A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz


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    PDF 2SC5049 REJ03G0740-0300 ADE-208-1129A) PLSP0003ZB-A MARKING CODE YA TRANSISTOR 2SC5049 2SC5049YA-TL-E SC-59A RENESAS marking code package

    2SC5049

    Abstract: 2SC5049YA-TL-E SC-59A RENESAS mpak marking code
    Text: 2SC5049 Silicon NPN Epitaxial REJ03G0740-0300 Previous ADE-208-1129A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz


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    PDF 2SC5049 REJ03G0740-0300 ADE-208-1129A) PLSP0003ZB-A 2SC5049 2SC5049YA-TL-E SC-59A RENESAS mpak marking code

    Hitachi transistor

    Abstract: 16-Bit Microcomputers "16-Bit Microcomputers" "Display Controller" hitachi ad "32-Bit Microprocessors" infrared diodes Hitachi laser diodes
    Text: HITACHI ASIA SEMICONDUCTOR & INTEGRATED CIRCUITDIVISION SICD SALES LOCATIONS HITACHI ASIA SEMICONDUCTOR & INTEGRATED CIRCUIT DIVISION PRODUCT RANGE 4-, 8-, 16-Bit Microcomputers Microprocessor - Peripherals 32-Bit Microprocessors Smart Card ICs Display Controller/Driver


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    PDF 16-Bit 32-Bit Hitachi transistor 16-Bit Microcomputers "16-Bit Microcomputers" "Display Controller" hitachi ad "32-Bit Microprocessors" infrared diodes Hitachi laser diodes

    M62292FP

    Abstract: PRSP0008DA-A PRSP0008DE-C
    Text: M62292FP 3.3 V, 1.8 V Fixed 2-Output Voltage DC/DC Converter REJ03D0852-0300 Rev.3.00 Jun 15, 2007 Description M62292FP is 3.3 V and 1.8 V fixed stable 2-output step-down DC/DC converter. It is possible to simplify peripheral circuit and to design compact and low cost sets because this device includes


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    PDF M62292FP REJ03D0852-0300 M62292FP PRSP0008DA-A PRSP0008DE-C

    240mil

    Abstract: M62220FP M62220L PRSP0008DA-A PRSP0008DE-C 5P5T
    Text: M62220L/FP 3.3 V Fixed Output Voltage DC/DC Converter REJ03D0846-0300 Rev.3.00 Jun 15, 2007 General Description The M62220 is a general purpose DC/DC converter which provides a 3.3 V fixed output voltage. It is possible to simplify the peripheral circuit and to design compact and low cost sets because this IC, housed in a


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    PDF M62220L/FP REJ03D0846-0300 M62220 240mil M62220FP M62220L PRSP0008DA-A PRSP0008DE-C 5P5T

    M62293FP

    Abstract: PRSP0008DA-A PRSP0008DE-C
    Text: M62293FP 3.3 V, 2.5 V Fixed 2-Output Voltage DC/DC Converter REJ03D0853-0300 Rev.3.00 Jun 15, 2007 Description M62293FP is 3.3 V and 2.5 V fixed stable 2-output step-down DC/DC converter. It is possible to simplify peripheral circuit and to design compact and low cost sets because this device includes


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    PDF M62293FP REJ03D0853-0300 M62293FP PRSP0008DA-A PRSP0008DE-C

    Untitled

    Abstract: No abstract text available
    Text: M5291P/FP DC/DC Converter REJ03D0841-0300 Rev.3.00 Jun 15, 2007 Description M5291 is a semiconductor integrated circuit which is designed for switching regulator control. The device consists of a comparator, controlled pulse width oscillator with peak current protection circuit , temperature compensated reference,


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    PDF M5291P/FP REJ03D0841-0300 M5291

    2SC3052F

    Abstract: No abstract text available
    Text: M62216FP/GP Low Voltage Operation STEP-UP DC/DC Converter REJ03D0845-0300 Rev.3.00 Jun 15, 2007 Description The M62216FP is designed as low voltage operation STEP-UP DC/DC converter. This IC can operate very low input voltage over 0.9 V and low power dissipation. (circuit current is less than 850 µA)


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    PDF M62216FP/GP REJ03D0845-0300 M62216FP 2SC3052F

    Untitled

    Abstract: No abstract text available
    Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with


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    PDF MG1200V1US51/ MG1800V1US51

    STR 6307

    Abstract: str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module
    Text: ● Outline Toshiba has developed a new 2500V-1000A insulated-gate bipolar transistor IGBT product. The product offers longer lifetime and improved reliability, and features a flat compression-bonded encapsulation package, a World first. It is suitable for high-power and high-voltage applications.


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    PDF 500V-1000A J22587 STR 6307 str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module

    MG1200V1us51

    Abstract: No abstract text available
    Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with


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    PDF MG1200V1US51/ MG1800V1US51 MG1200V1us51

    Untitled

    Abstract: No abstract text available
    Text: TAN-321 Audio IC Application Circuit TAN–321 Application Circuit Example of 3-band FM, MW and LW 5-V Tuner TA2149N + TC9257F 1. Outline TC9257F PLL VT F/E TA2149N VCO FM AM IF DET MPX L R MW LW The above is an application circuit example of a 3-band (FM, MW and LW) 5-V tuner.


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    PDF TAN-321 TA2149N TC9257F TA2149N, TC9257F 220kHz 400Hz

    TDA 16846 P

    Abstract: tda 2750 tda 4605 application note TDA 1031 transistor Siemens 14 S S 92 K2k transistor IC tda 16846 TDA 1060 f TDA 16846 TDA4605
    Text: Version 1.0 , March 2000 Application Note AN-SMPS-CoolMOS-1 SMPS with CoolMOS and TDA 16846x Author: Peter Preller Published by Infineon Technologies AG http://www.infineon.com Power Conversion Titel: Infineon Logo 4c.eps Erstellt von: Adobe Illustrator(R) 8.0


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    PDF 16846x PostScript-Druc90 Room14J1 Room1101 TDA 16846 P tda 2750 tda 4605 application note TDA 1031 transistor Siemens 14 S S 92 K2k transistor IC tda 16846 TDA 1060 f TDA 16846 TDA4605

    Untitled

    Abstract: No abstract text available
    Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering


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    PDF ST1200FXF21 500-V, 000-A 300-V, 200-A

    TRANSISTOR BC 206 PNP

    Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
    Text: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V


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    PDF MDC03 TRANSISTOR BC 206 PNP Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813

    tc 144e

    Abstract: 144EK
    Text: Part Marking □Marks are filled with hR ranks EM3 #h n Ranking Inc Ication C ode hFE R anking C ode h R R anking P a rt M a rkin g P a rt No. P ackage P art M arking 1C D P art No. 2SC4082 AD 2SC4818 ACD 2SC 4725 1D D 2SC4063 ADD 2SC 4726 1ED 2S C 4 0 S 4


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    PDF 2SC4082 2SC4818 2SC4063 2SC4617 2SD1664 2SD1768 2SD2098 2SC4672 2S02167 2SD2170 tc 144e 144EK

    SM8404

    Abstract: PC8041 Oscillator 3.6864MHz K2206 RM601 IR3M06 SM8401 S5504 IC 74256 SM8410
    Text: SHARP CORP b Q E J> m â l û G ? 1^ 000*1517 34 4 « S R P J RELIMINARY SM8410/IR3M06 • Cordless Telephone System Low-Power CMOS 8-Bit Microcomputer/Regulator IC M Description The SM8410 is a CMOS 8-bit single-chip microcomputer which integrates 8-bit CPU core, ROM,


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    PDF SM8410/IR3M06 SM8410 MA37167 K22060 SM8404 PC8041 Oscillator 3.6864MHz K2206 RM601 IR3M06 SM8401 S5504 IC 74256