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    TRANSISTOR BJ 101 Search Results

    TRANSISTOR BJ 101 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BJ 101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCX71JLT1G

    Abstract: No abstract text available
    Text: BCX71JLT1G General Purpose Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage


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    PDF BCX71JLT1G BCX71J/D BCX71JLT1G

    BCX71J

    Abstract: BCX71JLT1 BCX71JLT1G
    Text: BCX71J General Purpose Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 Vdc Collector − Base Voltage


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    PDF BCX71J OT-23 BCX71J/D BCX71J BCX71JLT1 BCX71JLT1G

    Untitled

    Abstract: No abstract text available
    Text: BCX71JLT1G General Purpose Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage


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    PDF BCX71JLT1G BCX71J/D

    abb entrelec relays

    Abstract: RB 121 A abb entrelec rb111 abb entrelec rb 121 relays 1000-5-12VDC 1SNA 115 144 R1300 RB121 RB 122 A 1sna 399 967 r0100 rb 121
    Text: Short Form Catalogue Relays Optocouplers R600 Series Relays and optocouplers R600 series Summary R600 interfaces Description . 3 Relay interfaces


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    PDF C0200 2005-IBF) abb entrelec relays RB 121 A abb entrelec rb111 abb entrelec rb 121 relays 1000-5-12VDC 1SNA 115 144 R1300 RB121 RB 122 A 1sna 399 967 r0100 rb 121

    abb entrelec relays

    Abstract: RB 121 A 5-OBIC-0030 RB122BR 1SNA 103 002 R2600 RB122B abb entrelec rb 121 relays 1sna 115 935 r0400 1SNA 103 612 R2500 5-OBOC-1000-24VDC
    Text: Short Form Catalogue Relays Optocouplers Relays and optocouplers Summary Applications - Technical data . 3 Selection guide - Relay modules . 4


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    PDF C0201 2003-IBF) abb entrelec relays RB 121 A 5-OBIC-0030 RB122BR 1SNA 103 002 R2600 RB122B abb entrelec rb 121 relays 1sna 115 935 r0400 1SNA 103 612 R2500 5-OBOC-1000-24VDC

    BCX71J

    Abstract: BCX71JLT1 SMD310 g 995
    Text: BCX71J General Purpose Transistor PNP Silicon • Moisture Sensitivity Level: 1 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Collector-Emitter Voltage VCEO –45 Vdc Collector-Base Voltage VCBO –45 Vdc Emitter-Base Voltage VEBO –5.0 Vdc IC


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    PDF BCX71J r14525 BCX71J/D BCX71J BCX71JLT1 SMD310 g 995

    AN-569

    Abstract: BCX71J BCX71JLT1 MPS3905 MPS3906 SMD310
    Text: BCX71J General Purpose Transistor PNP Silicon • Moisture Sensitivity Level: 1 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Collector-Emitter Voltage VCEO –45 Vdc Collector-Base Voltage VCBO –45 Vdc Emitter-Base Voltage VEBO –5.0 Vdc IC


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    PDF BCX71J r14525 BCX71J/D AN-569 BCX71J BCX71JLT1 MPS3905 MPS3906 SMD310

    MGM5N45

    Abstract: MGM5N50 MGP5N45 MGP5N50
    Text: MGM5N45 MGM5N50 MGP5N45 MGP5N50 N-CHANNEL ENHANCEMENT MODE SILICON GATE, GAIN ENHANCED MOS FIELD EFFECT TRANSISTOR These GEMFETS are designed for high voltage, high current power controls such as line operated motor controls and converters. o High Input Impedance


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    PDF MGM5N45 MGM5N50 MGP5N45 MGP5N50 O-204AA 1092BSC 546BSC MGM5N45 MGM5N50 MGP5N45 MGP5N50

    8050d transistor

    Abstract: winbond powerspeech W523X W56000 equivalent of transistor 8050 winbond powerspeech W528X W528X 8050 TRANSISTOR equivalent w528 W562S10
    Text: W562XXX DESIGN GUIDE 2-tone Melody+ADPCM Voice Synthesizer BandDirectorTM Family INTRODUCTION The W562xxx is a family of multi-engine speech synthesizers. These synthesizers incorporate part of the following parts into a single chip: a simple 4-bit uC core (including RAM, register file,


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    PDF W562XXX W529xx W523x W583xx W56xxxx W581xx W528x W56xxx W528x, 8050d transistor winbond powerspeech W523X W56000 equivalent of transistor 8050 winbond powerspeech W528X W528X 8050 TRANSISTOR equivalent w528 W562S10

    BCX70

    Abstract: BCX71 BCX71G BCX71H BCX71J BCX71K BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCX71 series PNP general purpose transistors Product specification Supersedes data of 1997 Apr 18 1999 Apr 20 Philips Semiconductors Product specification PNP general purpose transistors BCX71 series FEATURES


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    PDF M3D088 BCX71 BCX70 SCA63 115002/00/03/pp8 BCX71G BCX71H BCX71J BCX71K BP317

    42t sot-23

    Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
    Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen


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    PDF BCW61B BCX716 BCX71J BCW60 42t sot-23 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715

    SD1522

    Abstract: SD1522-9 TACAN 41 M105 1090MHZ TACAN transistor
    Text: H M / f / l t r l «-» f M ¡1 Progress Powered by Technology 140 C o m m e rc e D riv e M o n tg o m e ryy v ille , PA 18936-1013 c j Tel: 2 1 5 6 3 1 -9 8 4 0 r\r\M ra a a SD I 522-9 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS DESIGNATED FOR PULSE POWER IFF, DME,


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    PDF SD1522-9 1030-1090MHz 1025-1150MHz 960-1215MHz S885D1522-9-02 S88SD1522-M3 10jis SD1522 TACAN 41 M105 1090MHZ TACAN transistor

    tl3101

    Abstract: Tesla transistor TL31011 TL3101C 0/TL3101
    Text: TL3101I, TL3101C SILICON HALL-EFFECT SWITCH APRIL 1985— REVISED APRIL 1988 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output • Buried Hall-Effect Cell Reduces Threshold


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    PDF TL3101I, TL3101C TL3101 Tesla transistor TL31011 0/TL3101

    transistor k 4213 m

    Abstract: transistor BJ 102 transistor k 4213 TRANSISTOR BJ 101 b206a KT-52
    Text: 72 94621 POWEREX INC Tfl » F | 7 B cm b 2 1 m/vatex 3 | " D 'Ti S3-J5' KT521203 Powerex, Inc., Hlllts S treet, Yourtgwood, Pennsylvania 15697 412 925-7272 Split-Dual Darlington Transistor Module 30 Am peres/1200 Volts Description Powerex.Spiit-Dual Darlington Transistor


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    PDF KT521203 peres/1200 s/1200 transistor k 4213 m transistor BJ 102 transistor k 4213 TRANSISTOR BJ 101 b206a KT-52

    CN0352

    Abstract: WD-VP1 B288 CM06 U231
    Text: CN0352 Digital CMOS Imager The Gonexant CN0352 Digital CM06 Imager DQ chip is one component of Conexant Universal Serial Bus (USB) camera system. It can also be used as a standalone device for various applications requiring a QF resolution imager. The


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    PDF CN0352 10-bit a356Hx292Vframe 352x288) 356x292 354x290 6001DSR1 WD-VP1 B288 CM06 U231

    c 4977 transistor

    Abstract: TRANSISTOR C 5706 CQ 734 2SC4868 5P J TRANSISTOR MARKING use of ic 4094 transistor on 4977
    Text: O rdering n u m b e r:EN5043 N°-5043 II 2SC4868 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-noise Amp Applications Features • Low noise : NF = 1.2dB typ f= IGIiz . •High gain: I S21e I 2= 13dB typ (f= 1GHz). •High cutoff frequency : f? = 9.0GHz typ.


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    PDF EN5043 2SC4868 c 4977 transistor TRANSISTOR C 5706 CQ 734 2SC4868 5P J TRANSISTOR MARKING use of ic 4094 transistor on 4977

    Avantek uto 1504

    Abstract: AM/SSC 9500 ic data
    Text: AVANTEK ING M ME D AVANTEK B1 llMlSbb 000000=1 Ô B I A V A UTO/UTC 545 Series Thln-Filrri Cascadable Amplifier 10 to 500 MHz ' T 7 4 - 0 c?'O| FEATURES APPLICATIONS • Frequency Range: 10 to 500 MHz • High Dynamic Range • High Output Power; +19.0 dBm Typ


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    PDF 9503S Avantek uto 1504 AM/SSC 9500 ic data

    T313-1

    Abstract: No abstract text available
    Text: POWEREX T - 3 1 - 3 1 ID226005 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Dual IGBTMOD Power Module SO Amperes/600 Volts Description Powerex IGBTMOD™ Modules are


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    PDF ID226005 T-31-31 BP107, Amperes/600 22Max. T313-1

    3SK22

    Abstract: transistor 3l2 3SK22-Y 10ID nf 0102 3SK2
    Text: 3SK SILICON N-CHANNEL JUNCTION FIELD E FFE C T TRANSISTOR O Unit in mm O 058MAX. o FM Tuner and V.H.F Amplifier Applications • W ; HífígjfttfM'SI/» ! ÍS S = >y * ? * s' -* ¿4.95M A X 1 Qps = 20dB Typ. (f=100MHz) IO d NF= 2dB( Typ .) (f=100MHz) SW ;


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    PDF 100MHz) 100MHz jzf58MAX. 95UAX VES-10 f-200MHz, 3SK22 transistor 3l2 3SK22-Y 10ID nf 0102 3SK2

    tl3101

    Abstract: TL3101C TL3101I TESLA transistor
    Text: TL3101I, TL3101C SILICON HALL-EFFECT SWITCH A P R IL 1 9 8 5 — R E V I S E D A P R IL 1 9 8 8 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output • LU P A C K A G E T O P V IE W


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    PDF TL3101I, TL3101C TL3101 TL3101I TESLA transistor

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.


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    PDF BUK102-50GS isl25

    TL 188 TRANSISTOR PIN DIAGRAM

    Abstract: AD559 553C 244 0039J MP 1008 es fsr temperature weighing scale code example AD572 AD572S AD572SD
    Text: A N A LO G D EVIC E S 12'Bit Successive Approximation Integrated Circuit A/D Converter FEATURES Performance True 12-B it O peration: M ax IMonlineariiry < ± 0 .0 1 2 % Low Gain T .C .: < ± 1 5 p p m /°C A D 5 7 2 B Low Power: 900m W Fast Conversion T im e: < 25/us


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    PDF 12-Bit 12Bit 15ppm/Â AD572E5) 900mW 25/is AD572S) MIL-STD-883B 5000G TL 188 TRANSISTOR PIN DIAGRAM AD559 553C 244 0039J MP 1008 es fsr temperature weighing scale code example AD572 AD572S AD572SD

    marking code ce SOT23

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BCX71 series PNP general purpose transistors Product specification Supersedes data of 1997 Apr 18 Philips Semiconductors 1999 Apr 20 PHILIPS PHILIPS Philips Semiconductors Product specification PNP general purpose transistors BCX71 series


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    PDF BCX71 BCX70 BCX71G BCX71H BCX71J BCX71K SCA63 5002/00/03/pp8 marking code ce SOT23

    Untitled

    Abstract: No abstract text available
    Text: HS-245RH n n RADIATION HARDENED TRIPLE LINE TRANSMITTER C l3 HS-246RH, HS-249RH n V u T t^ Î RADIATION HARDENED TRIPLE LINE RECEIVERS HS-248RH December 1992 RADIATION HARDENED TRIPLE PARTY-LINE RECEIVER Pinouts Features • Radiation Hardened Dl Processing


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    PDF HS-245RH HS-246RH, HS-249RH HS-248RH HS9-245RH HS1-245RH HD-245/246/248/249 15MHz