CD 5401
Abstract: 2N5401 CD5401
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR 2N5401 9AW TO-92 CBE MARKING: CD 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.
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2N5401
C-120
CD 5401
2N5401
CD5401
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Untitled
Abstract: No abstract text available
Text: Voltage Regulators AN1149NFHK 6-ch DC-DC Converter • Overview Unit: mm 9.0±0.2 7.0±0.1 36 25 24 37 0.75 7.0±0.1 9.0±0.2 M Di ain sc te on na tin nc ue e/ d 4 channels of step-up, 1 channel of step-down and 1 channel of step-up/down voltage, 6 channels in total have
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AN1149NFHK
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Untitled
Abstract: No abstract text available
Text: Voltage Regulators AN1149FHK 6-ch DC-DC Converter • Overview Unit: mm 9.0±0.2 7.0±0.1 25 37 ■ Applications • Digital still cameras 0.5 12 0.20±0.05 1.0 1 0.10 M (1.0) 1.20 max. 0.15±0.05 (0.75) 0.10+0.10 –0.05 • Low voltage operation (1.5 V min.)
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AN1149FHK
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Untitled
Abstract: No abstract text available
Text: Voltage Regulators AN1149NFHK 6-ch DC-DC Converter • Overview Unit: mm 9.0±0.2 7.0±0.1 25 37 ■ Applications • Digital still cameras 0.5 12 0.20±0.05 1.0 1 0.10 M (1.0) 1.20 max. 0.15±0.05 (0.75) 0.10+0.10 –0.05 • Low voltage operation (1.5 V min.)
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AN1149NFHK
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BFP-540
Abstract: VPS05605 transistor BO 540 Transistor MJE 540
Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB Gold metallization for high reliability 2 SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05605
OT-343
50Ohm
-j100
Jun-09-2000
BFP-540
VPS05605
transistor BO 540
Transistor MJE 540
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VPS05605
Abstract: No abstract text available
Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB Gold metallization for high reliability 2 SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05605
OT-343
50Ohm
-j100
Oct-27-1999
VPS05605
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CC5401
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.
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CC5401
C-120
CC5401
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.
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CC5401
C-120
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NCP1392BD
Abstract: IC 1392B 1392B ballast Self-Oscillating NCP1392 smps high power smps resonant llc NCP1392BDR2G SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET LLC resonant converters
Text: NCP1392B High-Voltage Half-Bridge Driver with Inbuilt Oscillator The NCP1392B is a self−oscillating high voltage MOSFET driver primarily tailored for the applications using half bridge topology. Due to its proprietary high−voltage technology, the driver accepts bulk
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NCP1392B
NCP1392B
NCP1392/D
NCP1392BD
IC 1392B
1392B
ballast Self-Oscillating
NCP1392
smps high power
smps resonant llc
NCP1392BDR2G
SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET
LLC resonant converters
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MARKING W1 AD
Abstract: CC5401
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.
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CC5401
C-120
MARKING W1 AD
CC5401
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smps high power
Abstract: NCP1392 three phase pfc kW
Text: NCP1392B, NCP1392D High-Voltage Half-Bridge Driver with Inbuilt Oscillator The NCP1392B/D is a self−oscillating high voltage MOSFET driver primarily tailored for the applications using half bridge topology. Due to its proprietary high−voltage technology, the driver
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NCP1392B,
NCP1392D
NCP1392B/D
NCP1392/D
smps high power
NCP1392
three phase pfc kW
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2N3417
Abstract: NPN transistor ECB TO-92 transistor BO 540
Text: TO-92 2N3417 is NPN silicon planar transistor designed for general purpose AF medium power applications. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 50V Collector-Emitter Voltage VCEO 50V Emitter-Base Voltage VE BO 5V Collector Current IC Total Power Dissipation
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2N3417
2M3417
500mA
NPN transistor ECB TO-92
transistor BO 540
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8301 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P C HANN EL MOS TYPE L2- tt-M O S V I TPC8301 LITH IU M ION BATTERY INDUSTRIAL APPLICATIONS NOTE BO O K PC PORTABLE M ACHINES A N D TOOLS • • • • Low Drain-Source ON Resistance : Rd S (ON)= 95mO (Typ.)
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OCR Scan
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TPC8301
20kfi)
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639 TRANSISTOR PNP
Abstract: transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN
Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PNP NPN CB-1% PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .
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BCW94
CB-76
639 TRANSISTOR PNP
transistor ESM 692
NPN 337
esm 2907 pnp transistor
npn 2222 transistor
transistor C 548 B
BC516
E C B BC 635 TRANSISTOR
BC 557 PNP TRANSISTOR
transistor bf 422 NPN
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TRANSISTOR BC 213
Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .
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BCW94
CB-76
TRANSISTOR BC 213
TRANSISTOR BC 181
bf 239
BF 212 transistor
transistor bf 184
BF 184 NPN transistor
TRANSISTOR BC 212
TRANSISTOR BC 174
transistor BC 338
BF 184 transistor
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transistor Bc 540
Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -c s f Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .
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BCW94
CB-76
transistor Bc 540
TRANSISTOR BC 135
transistor Bc 540 pin
BC 540 TRANSISTOR
Bc 540
transistor B 540
bcw 25 transistor
bcw 91 transistor
ESM635
transistor BC 635
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transistor bf 422 NPN
Abstract: transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor
Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .
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BCW94
transistor bf 422 NPN
transistors BC 548 BC 558
transistor BC 338
BC 2222
BC 557 npn
transistor bf 422
BC 547 pnp
transistor 2N 5551
TRANSISTOR 642
npn 2222 transistor
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transistor Bc 540
Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .
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BCW94
transistor Bc 540
transistor BC 341-6
transistor BC 660
transistor 3702
transistor 3707
transistor 2n 2222
transistor Bc 7
NPN transistor 2n 3904
transistors BC 225
transistor BC 310
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transistor bc 488
Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .
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BCW94
BC317P.
transistor bc 488
transistor bc 557 c
bc 547 b transistor
TRANSISTOR C 557 B
TRANSISTOR BC 550 b
transistor BC 490
C 547 B pin configuration
bc 547 transistor
transistor BC 557
transistor C 548 B
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transistor BC 310
Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .
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BCW94
CB-76
BC317P.
transistor BC 310
transistor bc 487
transistor BC 321
TRANSISTOR BC 416 b pnp
bc 337-25 transistor
TRANSISTOR BC 415
transistor bc 318
transistor BC 337-25
TRANSISTOR BC 413
bc 337-40 transistor
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Preliminary specification NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL 1 RXB06150W SbE D • 7110fl2b D04bS42 ^ET FEATURES DESCRIPTION APPLICATIONS • Suitable for short and medium pulse applications up to
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RXB06150W
7110fl2b
D04bS42
FO-91B
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QM10TE-HB
Abstract: bup transistor bvp DIODE QM10 QM10T
Text: MITSUBISHI TRANSISTOR MODULES QM10TE-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM10TE-HB • Ic • V ce x • hFE Collector current. 10A [ Collector-emitter voltage. 600V j DC current gain.250
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QM10TE-HB
E80276
E80271
QM10TE-HB
bup transistor
bvp DIODE
QM10
QM10T
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k2917
Abstract: ic l00a
Text: TO SHIBA 2SK2917 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2S K29 17 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce O N Resistance
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2SK2917
--90V,
k2917
ic l00a
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Untitled
Abstract: No abstract text available
Text: 2SK2917 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 7<;ii5Q17 M F • m. v ■ m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE
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2SK2917
ii5Q17
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