chip die npn transistor
Abstract: quad hf npn transistors
Text: IGN W D ES E N R T FO ODUC NDED T E PR O MME U C IT E T R BS Data Sheet NOT LE S U A3127 POSSIB CA3127, HF April 2002 High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN
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A3127
CA3127,
CA3227
FN1345
CA3227
PUB95
MO-220
chip die npn transistor
quad hf npn transistors
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CA3127
Abstract: CA3227 CA3227M CA3227M96 TB379 610E 800E
Text: CA3227 IGNS W DES E N R O DED F E PRODUCT MMEN UT O C IT E T Data Sheet U BS S NOT R E L B A3127 POSSI CA3127, HF High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN
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CA3227
A3127
CA3127,
CA3227
FN1345
CA3127
CA3227M
CA3227M96
TB379
610E
800E
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PDF
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bash audio amplifier circuit diagram
Abstract: bash indigo audio amplifier circuit diagram indigo bash bash amp diagram bash audio amplifier circuit diagram mono bash indigo STABP01 preamplifier st STA5100 8 pin 4v power supply converter
Text: STA5100 140W MONO POWER AMPLIFIER MONOCHIP BRIDGE MONO AMPLIFIER FOR BASH ARCHITECTURE 110W OUTPUT POWER @ R L = 4 Ω, THD = 0.5% 140W OUTPUT POWER @ R L = 4 Ω, THD = 10% HIGH DYNAMIC PREAMPLIFIER INPUT STAGES EXTERNAL PROGRAMMABLE FEEDBACK TYPE COMPRESSORS
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STA5100
FLEXIWATT27
bash audio amplifier circuit diagram
bash indigo audio amplifier circuit diagram
indigo bash
bash amp diagram
bash audio amplifier circuit diagram mono
bash indigo
STABP01
preamplifier st
STA5100
8 pin 4v power supply converter
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PDF
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DIN 32676
Abstract: CLASS 2500 VALVE PRESSURE CHART transistor sms asme transistor D 322 DIN 43650 form a P122D din 64 pin ribbon type c RG2 -relay valve B16-5-1988
Text: 8032 INLINE Flow Switch with On/Off indicator • DN 5/16“ to 2“ orifice • Local indicator • Adjustable switching contact transistor or relay • Adjustable hysterisis and delay time Type 8032 can be combined with. Type S030 Fitting Type 6013 Type 6213
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tb31224cf
Abstract: TC35453F tb31224 TC35470 tb31207afn TC35470AF TB31207 TC35133 TA31056F TA31033P
Text: Communications Equipment ICs Telephone IC Series z 122 Mobile Radio IC Series z 123 Fax Machine ICs z 125 Neuron Chips for LonWorks Technology z 126 121 Telephone IC Series Bipolar Bi-CMOS ICs TA31065N TA31065FA TA31033P TA31033F TA31033AP Function Telephone
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TA31065N
TA31065FA
TA31033P
TA31033F
TA31033AP
TA31068F
TB31303BF
TB31307AF
TA31056P
TA31056F
tb31224cf
TC35453F
tb31224
TC35470
tb31207afn
TC35470AF
TB31207
TC35133
TA31056F
TA31033P
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PDF
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SC70-5L
Abstract: No abstract text available
Text: STCL932K 32,768 Hz silicon oscillator Features • Fixed frequency 32,768 Hz ■ –1.2%/+0.8% frequency accuracy over all conditions ■ 1.65 to 1.95 V operation ■ Low operating current, ultra low standby current ■ Push-pull, CMOS compatible frequency
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STCL932K
SC70-5L
STCL932K
SC70-5L
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b0714
Abstract: "power sourcing equipment" "powered device" circuit diagram 48V power supply PSE Poe
Text: HV110 Power-over-Ethernet Interface PD Controller Meets IEEE802.3afTM Standard General Description ► ► ► ► ► The HV110 provides complete power management and protection for Powered Devices PDs utilizing the IEEE802.3af protocol. As the most complete PD Power Manager available,
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HV110
IEEE802
400mA
350mA
b0714
"power sourcing equipment"
"powered device"
circuit diagram 48V power supply PSE Poe
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PDF
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bs170
Abstract: 5K02 MARKING BS
Text: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V 5 VPT05158 Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 BS 170 Ordering Code Q67000-S061 Q67000-S076 Pin 3 G ^DS(on) Package
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OCR Scan
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VPT05158
Q67000-S061
Q67000-S076
E6288
11---------------------------------O
bs170
5K02
MARKING BS
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PDF
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transistor bh ra
Abstract: WE VQE 24 E D 400 F 6 F BIPOLAR TRANSISTOR WE VQE 11 E BUK856-800A T0220AB M 615 transistor
Text: PHILIPS INTERNATIONAL bSE D • 7110fl5b 00b4353 ^bS ■ P H I N Philips Semiconductors_ Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a
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OCR Scan
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BUK856-800A
T0220AB
transistor bh ra
WE VQE 24 E
D 400 F 6 F BIPOLAR TRANSISTOR
WE VQE 11 E
BUK856-800A
M 615 transistor
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PDF
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BUK427-400A
Abstract: BUK427-400B UNC20
Text: N AMER □ □ 2 0 2 bS 4 SSE D PHILIPS/DISCRETE PowerMOS transistor BUK427-400A BUK427-400B r-rh }} GENERAL DESCRIPTION SYMBOL Cfl G > N-channef enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in
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BUK427-400A
BUK427-400B
BUK427
-400A
-400B
UNC20
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PDF
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BLW40
Abstract: MCD205 TLO 721
Text: Philips Sem iconductors I 7 1 1 DS2 b 0 0 t>3232 3 bS ^BPHIN PHILIPS INTERNATIONAL VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. Product specification
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OCR Scan
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711065b
00b3535
BLW40
OT120
PINNING-SOT120
BLW40
MCD205
TLO 721
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PDF
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BUK581-100A
Abstract: DD3003
Text: tiTE D N AMER P H I L I P S / D I S C R E T E • b bS BT a i □03Dfl3tj 25 2 ■ APX Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope
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0030fl3t,
BUK58Ã
-100A
OT223
aD30a41
BUK581
OT223.
BUK581-100A
DD3003
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PDF
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BUK427-400A
Abstract: 100-P BUK427-400B lD25-c RI LGR
Text: N AMER btiS3'i31 □□202 bS SSE D P H I L I P S / D I SC RE T E 4 PowerMOS transistor BUK427-400A BUK427-400B • GENERAL DESCRIPTION SYMBOL CO Û > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in
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BUK427-400A
BUK427-400B
BUK427
-400A
-400B
100-P
BUK427-400B
lD25-c
RI LGR
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PDF
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smd diode code pj 70
Abstract: uras 10 pj 68 SMD diode smd diode code pj 50
Text: SIEMENS SPD30N03 SPU30N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated f c * '' VPT09Q50 VPT09051 • dv/df rated • 175°C operating temperature Type SPD30N03 Yds 30 V b 30 A ^bS on 0.015 Q. @ VGS VQS = 10V
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SPD30N03
SPU30N03
VPT09Q50
VPT09051
P-T0252
Q67040-S4144-A2
P-T0251-3-1
Q67040-S4146-A2
smd diode code pj 70
uras 10
pj 68 SMD diode
smd diode code pj 50
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FR ED FET Type Vos BUZ 384 500 V 4> 10.5 A *bs on 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage Vos Drain-gate voltage
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O-218AA
C67078-A3209-A2
O-218AA
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PDF
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BUZ 835
Abstract: No abstract text available
Text: SIEMENS BUZ 307 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated BUZ 307 CO Type 800 V b 3A ^bs on 3 Í1 Package Ordering Code TO-218AA C67078-S3100-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b 7C = 35 °C
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O-218AA
C67078-S3100-A2
O-218AA
BUZ 835
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 347 50 V h 45 A ^bs on Package Ordering Code 0.03 n TO-218AA C67078-S31 15-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218AA
C67078-S31
15-A2
fl23SbOS
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 332 N ot fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 332 V'ds 600 V h 8.5 A ^bs on 0.8 a Package Ordering Code TO-218AA C67078-S3123-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218AA
C67078-S3123-A2
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PDF
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" transistor" fgs 3
Abstract: Fly DS 100
Text: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 b 8.5 A W>s 600 V ^bs on 0.8 n Package Ordering Code TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1342-A2
" transistor" fgs 3
Fly DS 100
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PDF
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GD 743 Siemens
Abstract: No abstract text available
Text: SIEMENS BUZ 103 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also In TQ-220 SMD available Type BUZ103AL ^bs 50 V b 35 A ^DS on
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TQ-220
BUZ103AL
C67078-S1357-A2
A23SbOS
Z103AL
O-220
T05155
235b05
D0fl45flfl
GD 743 Siemens
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transistor buz 104
Abstract: No abstract text available
Text: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated k • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 104 Vbs 50V b 17.5 A ^bS on 0.1 Û Package
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O-220
C67078-S1353-A2
transistor buz 104
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 B Vbs 1000 V b 2A ^BS on 8ß Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage '' dgr Rq s = 20 ki2
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O-220
C67078-A1307-A4
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PDF
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motorola 371-03
Abstract: mrf754
Text: MOTOROLA SC XSTRS/R F 4bE D b3b?2S4 OOTMf l bS MOTOROLA 3 HriOTb T - 3 Z > '0 5 SEM IC O N D U C T O R TECHNICAL DATA MRF754 T h e R F L in e 8.0 W - 470 M Hz - 7 .5 V HIG H FREQ UENCY T R A N S IS TO R NPN SILICON HIGH FREQUENCY TRANSISTOR N P N S IL IC O N
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MRF754
motorola 371-03
mrf754
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6822 TRANSISTOR equivalent
Abstract: transistor T009 transistor W1A 93 TRANSISTOR NPN 6822 TRANSISTOR 434 transistor w1a 84 w1a 02 transistor transistors 6822 CECC50000 cecc00200
Text: BRITISH STAND ARD S INSTITUTION 2, PARK STREET. LONDON, W1A 2BS BS CECC 50 004-042 Specification available from:— AS SH O W N IN PD 9 0 0 2 , and CECC 0 0 2 0 0 S EM E L A B MANUFACTURING LTD. COVENTRY ROAD. LU T T E R W O R T H , L E I C E S T E R S H I R E .
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2N3055
6822 TRANSISTOR equivalent
transistor T009
transistor W1A 93
TRANSISTOR NPN 6822
TRANSISTOR 434
transistor w1a 84
w1a 02 transistor
transistors 6822
CECC50000
cecc00200
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