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    BUK427 Search Results

    BUK427 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK427-400A Philips Semiconductors PowerMOS Transistor Original PDF
    BUK427-400A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK427-400A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK427-400B Philips Semiconductors PowerMOS Transistor Original PDF
    BUK427-400B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK427-400B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK427-450B Philips Semiconductors PowerMOS Transistor Original PDF
    BUK427-450B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK427-500A Philips Semiconductors PowerMOS Transistor Original PDF
    BUK427-500A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK427-500A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK427-500B Philips Semiconductors PowerMOS Transistor Original PDF
    BUK427-500B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK427-500B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK427-600A Philips Semiconductors PowerMOS Transistor Original PDF
    BUK427-600A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK427-600A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK427-600B Philips Semiconductors PowerMOS Transistor Original PDF
    BUK427-600B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK427-600B Unknown Shortform Datasheet & Cross References Data Short Form PDF

    BUK427 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUK427-600B

    Abstract: 18-SO BUK427-600 d0411
    Text: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.


    OCR Scan     		PDF BUK427-600 711Dfl2t. D0411S0 -SOT199 BUK427-600B 18-SO d0411

    BUK427-400A

    Abstract: BUK427-400B UNC20
    Text: N AMER □ □ 2 0 2 bS 4 SSE D PHILIPS/DISCRETE PowerMOS transistor BUK427-400A BUK427-400B r-rh }} GENERAL DESCRIPTION SYMBOL Cfl G > N-channef enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK427-400A BUK427-400B BUK427 -400A -400B UNC20

    BUK427-600B

    Abstract: BUK427-600A sot199 G0205
    Text: N AMER P H I L I P S / D I S C R E T E SSE D • 1^53=131 O G E O S Û O □ ■ PowerMOS transistor BUK427-600A BUK427-600B T - 3 7 - I I GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK427-600A BUK427-600B BUK427 -600A -600B sot199 G0205

    Untitled

    Abstract: No abstract text available
    Text: 7 = 5 ? Philips Components D ata sheet status Product specification date of issue March 1991 BUK427-500B PowerMOS transistor SbE D P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.


    OCR Scan     		PDF BUK427-500B PINNING-SOT199 7110fl2fc>

    BUK427-600B

    Abstract: No abstract text available
    Text: 7 ^ 3 9 - / / Philips Com ponents Data sheet status P r o d u c t s p e c ific a tio n date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic füll pack envelope.


    OCR Scan     		PDF BUK427-600B 7110fl5fc. -SOT199 T-39-11 711Qfl2b BUK427-600B

    BUK427-500B

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 25E D bbSBTEl 0050275 7 PowerMOS transistor BUK427-500A BUK427-500B T - 39-11 GENERAL DESCRIPTION SYMBOL ccn > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK427-500A BUK427-500B BUK427 -500A -500B BUK427-500B

    BUK427-500B

    Abstract: BUK427-500A
    Text: SSE N AMER P H I L I P S / D I S C R E T E D ^ 53=131 0050275 7 PowerMOS transistor BUK427-500A BUK427-500B y - 3 e? - 11 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF 0050S7S BUK427-500A BUK427-500B BUK427 -500A -500B

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I L I PS/DISCRETE bbS3131 00E0S7Q fi E5E D BUK427-450B PowerMOS transistor r - 3<3-ii G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF bbS3131 00E0S7Q BUK427-450B 427-450B

    BUK427-400A

    Abstract: 100-P BUK427-400B lD25-c RI LGR
    Text: N AMER btiS3'i31 □□202 bS SSE D P H I L I P S / D I SC RE T E 4 PowerMOS transistor BUK427-400A BUK427-400B • GENERAL DESCRIPTION SYMBOL CO Û > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK427-400A BUK427-400B BUK427 -400A -400B 100-P BUK427-400B lD25-c RI LGR

    k427 transistor

    Abstract: k427 k427 diode BUK427-500B
    Text: 7=3 Philips Com ponents Data sheet status Product specification date of issue March 1991 BUK427-500B PowerMOS transistor m 711Q6Hb DQM4145 12G PHILIPS INTERNATIONAL SbE GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.


    OCR Scan     		PDF BUK427-500B DQM4145 PINNING-SOT199 k427 transistor k427 k427 diode BUK427-500B

    BUK427-450B

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S C R E T E ESE D • fabS3131 0 0 2 0 2 7 0 PowerMOS transistor ô ■ BUK427-450B -r-3 9 -ti GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF fabS3T31 BUK427-450B -ID/100

    BUK427-450B

    Abstract: No abstract text available
    Text: N A M ER PHILIPS/DISCRETE ESE D • fabS3131 0020270 PowerMOS transistor ô ■ BUK427-450B -r-39-ti GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF fabS3T31 BUK427-450B -ID/100 BUK427-450B

    BUK427-500A

    Abstract: BUK427-500B
    Text: N AMER PHILIPS/DISCRETE E35E D ^53=131 0050275 7 PowerMOS transistor BUK427-500A BUK427-500B Y - 3*7 - J i GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 0050S7S BUK427-500A BUK427-500B BUK427 -500A -500B -ID/100 BUK427-500B

    TRANSISTOR P3

    Abstract: BUK427-400B philips kt
    Text: Philips Components D ata sheet status Product specification date of issue March 1991 PowerMOS transistor SbE PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channe! enhancem ent mode field-effect pow er transistor in a plastic full pack envelope. The device is intended fo r use in


    OCR Scan     		PDF BUK427-400B DD44ma OT199 TRANSISTOR P3 BUK427-400B philips kt

    BUK427-600A

    Abstract: BUK427-600B EX-45
    Text: N AMER P H I L I P S / D I S C R E T E SSE D • 1^53=131 O G E O S Ô O □ ■ P o w erM O S tra n s is to r - B U K 427-600A B U K 427-600B T - 3 7 - II QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK427-600A BUK427-600B T-37- BUK427 -600A -600B BUK427-600B EX-45

    k427 transistor

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE ^ 5 3 7 3 1 0050260 0 2SE D PowerMOS transistor B U K 4 2 7-60 0 A B U K 427-600B G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF 427-600B BUK427 -600A -600B bb53131 7-600A k427 transistor

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G

    BUK427-400B

    Abstract: No abstract text available
    Text: Philips Components Data sheet status P roduct specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK427-400B 711002b DD4414G -SOT199 T-39-11 BUK427-400B