bv32
Abstract: TRANSISTOR BV32 switching transistor bv-32
Text: BV32 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage
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bv32
Abstract: TRANSISTOR BV32 switching transistor BV32 to92
Text: BV32 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage
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BV4 transistor
Abstract: TRANSISTOR BV3 BV4 pnp MMBTSB624LT1
Text: MMBTSB624LT1 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624LT1
OT-23
100mA
700mA
700mA,
PW350
BV4 transistor
TRANSISTOR BV3
BV4 pnp
MMBTSB624LT1
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TRANSISTOR BV3
Abstract: No abstract text available
Text: MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624
OT-23
100mA
700mA
700mA,
TRANSISTOR BV3
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BV4 transistor
Abstract: transistor BV4
Text: MMBTSB624LT1 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624LT1
OT-23
100mA
700mA
700mA,
PW350
BV4 transistor
transistor BV4
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TRANSISTOR BV3
Abstract: BV4 transistor BV4 pnp bv-1 transistor bV2
Text: MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624
OT-23
100mA
700mA
700mA,
TRANSISTOR BV3
BV4 transistor
BV4 pnp
bv-1
transistor bV2
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D1802
Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
Text: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)
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2SB624A
2SD596A
D1802
TRANSISTOR BV3
2SB624A
nec marking power amplifier
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2SB624
Abstract: 2SD596
Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.
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2SB624
OT-23
The2SB624
-100mA)
2SD596
2SB624
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sot-23 bv2
Abstract: 2SB624 2SD596
Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.
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2SB624
OT-23
The2SB624
-100mA)
2SD596
sot-23 bv2
2SB624
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bv32
Abstract: TRANSISTOR BV32 STBV32-AP STBV32
Text: STBV32 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code STBV32 STBV32-AP n n n n Marking BV32 BV32 Package / Shipment TO-92 / Bulk TO-92 / Ammopack HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
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STBV32
STBV32-AP
bv32
TRANSISTOR BV32
STBV32-AP
STBV32
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2SB624
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.
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2SB624
200TYP
-100mA)
2SD596.
OT-23
BL/SSSTC014
2SB624
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sot-23 bv4
Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.
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2SB624
200TYP
-100mA)
2SD596.
OT-23
BL/SSSTC014
sot-23 bv4
2SB624
BV4 sot23
TRANSISTOR BV3
marking BV4
SOT23 BV2
2SD596
BV3 marking
BV5 SOT-23
transistor BV4
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bv32
Abstract: BV32G STBV32 TRANSISTOR BV32 JESD97 STBV32-AP STBV32G STBV32G-AP
Text: STBV32 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps CFLS
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STBV32
O-92AP
STBV32G
STBV32G-AP
bv32
BV32G
STBV32
TRANSISTOR BV32
JESD97
STBV32-AP
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BV32E
Abstract: STBV32E STBV32E-AP JESD97 st 833 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a to-92
Text: STBV32E High voltage fast-switching NPN Power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Battery charger SMPS TO-92
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STBV32E
BV32E
BV32E
STBV32E
STBV32E-AP
JESD97
st 833
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a to-92
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sot-23 bv2
Abstract: marking BV4 2SB624
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage
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OT-23-3L
2SB624
OT-23-3L
-100mA
-700mA
-70mA
-10mA
sot-23 bv2
marking BV4
2SB624
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hFE-200 transistor PNP
Abstract: 2SB624
Text: 2SB624 SOT-23 Transistor PNP SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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2SB624
OT-23
OT-23
-100mA)
2SD596.
-700mA
-70mA
-10mA
-100A,
hFE-200 transistor PNP
2SB624
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 SOT-23 TRANSISTOR PNP FEATURES 1.BASE 2.EMITTER 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
2SB624
OT-23
-100mA)
2SD596.
-100mA
-700mA
-70mA
-10mA
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BV4 pnp
Abstract: BV4 transistor 2SB624 2SD596
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
2SB624
OT-23
-100mA)
2SD596.
-100mA
-700mA
-70mA
-10mA
BV4 pnp
BV4 transistor
2SB624
2SD596
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2SB624
Abstract: 2SD596 BV4 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 SOT-23-3L TRANSISTOR PNP FEATURES 1.BASE High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23-3L
2SB624
OT-23-3L
-100mA)
2SD596.
-100mA
-700mA
-700mA,
-70mA
-10mA
2SB624
2SD596
BV4 transistor
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Bv4 smd transistor
Abstract: MARKING SMD PNP TRANSISTOR BV5 TRANSISTOR SMD BV4 CSB624 equivalent transistor smd 3 em 7 sot-23 MARKING bv SMD TRANSISTOR BV5
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSB624 PIN CONFIGURATION PNP 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Designed for use in Small type Equipments Especially Recommended or Hybrid Circuit and
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ISO/TS16949
CSB624
OT-23
CSD596
C-120
CSB624Rev
160803E
Bv4 smd transistor
MARKING SMD PNP TRANSISTOR BV5
TRANSISTOR SMD BV4
CSB624
equivalent transistor smd 3 em 7
sot-23 MARKING bv
SMD TRANSISTOR BV5
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Bv4 smd transistor
Abstract: TRANSISTOR SMD BV4 MARKING SMD PNP TRANSISTOR BV5 Bv3 smd transistor smd transistor bv4 MARKING SMD PNP TRANSISTOR BV TRANSISTOR SMD BV CSB624 TRANSISTOR BV3 SMD TRANSISTOR BV5
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSB624 PIN CONFIGURATION PNP 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Designed for use in Small type Equipments Especially Recommended or Hybrid Circuit and
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ISO/TS16949
9001Certified
CSB624
OT-23
CSD596
C-120
CSB624Rev
160803E
Bv4 smd transistor
TRANSISTOR SMD BV4
MARKING SMD PNP TRANSISTOR BV5
Bv3 smd transistor
smd transistor bv4
MARKING SMD PNP TRANSISTOR BV
TRANSISTOR SMD BV
CSB624
TRANSISTOR BV3
SMD TRANSISTOR BV5
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2SB624
Abstract: 2SD596
Text: NEC SILICON TRANSISTOR 2SB624 ^3£CTR0N DEVICE AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SB624 is designed fo r use in small type equipments especially recom in millimeters 2.8 + 0.2
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2SB624
2SB624
2SD596
NECTOKJ22686
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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3SK274
Abstract: No abstract text available
Text: T O SH IB A 3SK274 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK274 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2.1 + 0. 1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Gatel-Drain Voltage Gate2-Drain Voltage Gatel-Source Voltage
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3SK274
800MHz
3SK274
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