BV45
Abstract: No abstract text available
Text: BV45 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage
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BV4 transistor
Abstract: TRANSISTOR BV3 BV4 pnp MMBTSB624LT1
Text: MMBTSB624LT1 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624LT1
OT-23
100mA
700mA
700mA,
PW350
BV4 transistor
TRANSISTOR BV3
BV4 pnp
MMBTSB624LT1
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TRANSISTOR BV3
Abstract: No abstract text available
Text: MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624
OT-23
100mA
700mA
700mA,
TRANSISTOR BV3
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BV45
Abstract: No abstract text available
Text: BV45 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage
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BV4 transistor
Abstract: transistor BV4
Text: MMBTSB624LT1 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624LT1
OT-23
100mA
700mA
700mA,
PW350
BV4 transistor
transistor BV4
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TRANSISTOR BV3
Abstract: BV4 transistor BV4 pnp bv-1 transistor bV2
Text: MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624
OT-23
100mA
700mA
700mA,
TRANSISTOR BV3
BV4 transistor
BV4 pnp
bv-1
transistor bV2
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D1802
Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
Text: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)
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2SB624A
2SD596A
D1802
TRANSISTOR BV3
2SB624A
nec marking power amplifier
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2SB624
Abstract: 2SD596
Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.
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2SB624
OT-23
The2SB624
-100mA)
2SD596
2SB624
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sot-23 bv2
Abstract: 2SB624 2SD596
Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.
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2SB624
OT-23
The2SB624
-100mA)
2SD596
sot-23 bv2
2SB624
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BV45
Abstract: FLUORESCENT LAMPS CFLS marking 131-6 to92 STBV45 STBV45-AP 131-6 to92
Text: STBV45 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code Marking Package / Shipment STBV45 BV45 TO-92 / Bulk STBV45-AP BV45 TO-92 • ■ ■ ■ / Ammopack HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
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STBV45
STBV45-AP
BV45
FLUORESCENT LAMPS CFLS
marking 131-6 to92
STBV45
STBV45-AP
131-6 to92
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BV45
Abstract: marking 131-6 to92 STBV45 STBV45-AP FLUORESCENT LAMPS CFLS
Text: STBV45 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Table 1: Order Codes Ordering Code Marking Package / Shipment STBV45 BV45 TO-92 / Bulk STBV45-AP BV45 TO-92 • ■ ■ ■ / Ammopack HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
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STBV45
STBV45-AP
BV45
marking 131-6 to92
STBV45
STBV45-AP
FLUORESCENT LAMPS CFLS
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2SB624
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.
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2SB624
200TYP
-100mA)
2SD596.
OT-23
BL/SSSTC014
2SB624
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sot-23 bv4
Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.
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2SB624
200TYP
-100mA)
2SD596.
OT-23
BL/SSSTC014
sot-23 bv4
2SB624
BV4 sot23
TRANSISTOR BV3
marking BV4
SOT23 BV2
2SD596
BV3 marking
BV5 SOT-23
transistor BV4
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bv42
Abstract: STBV42D st marking code
Text: STBV42D High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated free-wheeling diode Application ■ Compact fluorescent lamps CFLs
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STBV42D
BV42D
bv42
STBV42D
st marking code
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BV45
Abstract: to-92a JESD97 STBV45 STBV45-AP STBV45G STBV45G-AP TO-92AP
Text: STBV45 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps CFLs
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STBV45
O-92AP
STBV45G
STBV45G-AP
BV45
to-92a
JESD97
STBV45
STBV45-AP
TO-92AP
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bv42 transistor
Abstract: bv42 BV42G BV42 ST Transistor STBV42 STBV42G-AP JESD97 STBV42-AP STBV42G
Text: STBV42 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps CFLs
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STBV42
O-92AP
STBV42G
STBV42G-AP
bv42 transistor
bv42
BV42G
BV42 ST Transistor
STBV42
JESD97
STBV42-AP
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bv42
Abstract: bv42 transistor STBV42G BV42G st codeS to-92a STBV42 STBV42-AP JESD97 STBV42G-AP
Text: STBV42 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps CFLs
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STBV42
O-92AP
STBV42G
STBV42G-AP
bv42
bv42 transistor
BV42G
st codeS
to-92a
STBV42
STBV42-AP
JESD97
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BV45
Abstract: BV45G JESD97 STBV45 STBV45-AP STBV45G STBV45G-AP smps schematic
Text: STBV45 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps CFLs
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STBV45
O-92AP
STBV45G
STBV45G-AP
BV45
BV45G
JESD97
STBV45
STBV45-AP
smps schematic
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bv42
Abstract: bv42 transistor BV42 ST Transistor STBV42G-AP BV42G 7232 STBV42 STBV42-AP STBV42G
Text: STBV42 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Applications ■ Compact fluorescent lamps CFLs ■ SMPS for battery charger TO-92 TO-92AP Description
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STBV42
O-92AP
STBV42G
STBV42G-AP
bv42
bv42 transistor
BV42 ST Transistor
BV42G
7232
STBV42
STBV42-AP
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Untitled
Abstract: No abstract text available
Text: STBV45 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed s ct u d o Applications ■ Compact fluorescent lamps (CFLs)
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STBV45
STBV45G
STBV45G-AP
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Untitled
Abstract: No abstract text available
Text: STBV42D High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated free-wheeling diode s ct u d o Application ■ r P e Compact fluorescent lamps (CFLs)
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STBV42D
BV42D
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sot-23 bv2
Abstract: marking BV4 2SB624
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage
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OT-23-3L
2SB624
OT-23-3L
-100mA
-700mA
-70mA
-10mA
sot-23 bv2
marking BV4
2SB624
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2SB624
Abstract: 2SD596
Text: NEC SILICON TRANSISTOR 2SB624 ^3£CTR0N DEVICE AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SB624 is designed fo r use in small type equipments especially recom in millimeters 2.8 + 0.2
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2SB624
2SB624
2SD596
NECTOKJ22686
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2SB624
Abstract: No abstract text available
Text: SEC / ELECTRON DEVICE SILICON TRANSISTOR 2SB624 / AUDIO FREQUENCY POWER AMPLIFIER PIMP SILICON EPITAXIAL TRANSISTOR M IN I MOLD D E SC R IPTIO N PACK AG E D IM E N S IO N S The 2SB624 is designed for use in small type equipments especially recom mended fo r hybrid integrated circuit and other applications.
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2SB624
2SB624
2SD596
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