transistor T K 2056
Abstract: K 2056 transistor transistor K 2056
Text: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage
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SS2SC4271
T0126
300mA,
100mA)
SS2SC4272
1S-126A
IS-20MA
transistor T K 2056
K 2056 transistor
transistor K 2056
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Untitled
Abstract: No abstract text available
Text: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 400 Volts 225 mWatts FEATURES • Silicon, planar design • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026
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MMBTA44
300mA
OT-23,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT-23 225 mW Unit：inch mm MECHANICAL Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx weight : MAXIMUM RATINGS R A T IN G S YM B O L VA L UE U N IT C o lle c to r-E mi tte r Vo lta g e
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MMBTH10
OT-23
OT-23,
MIL-STD-750,
2012-REV
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TRANSISTOR FS 2025
Abstract: SILICON TRANSISTOR FS 2025 2SK775 JIS G3141 DDD3710 2052A DS-17 SANYO AKO 450
Text: SANYO SEMICONDUCTOR ISE D I CORP ? c]cì?Q7t. □aDSHS'ì □ | “~ r - 3 f - u 2SK775 Ñ -Channel M O S Silicon Field-Effect Transistor Very High Speed Switching Applications 2559 Features . Low ON resistance, very high-speed switching Absolute M a x i m Ratings at Ta=25°C
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2SK775
0DGB752
TRANSISTOR FS 2025
SILICON TRANSISTOR FS 2025
2SK775
JIS G3141
DDD3710
2052A
DS-17 SANYO
AKO 450
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PDF
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2SD1397
Abstract: 2SC2271 transistor 2SC2271 2S01397 ic 30359
Text: SANYO SEMICONDUCTOR CÔRP ISE D I 7 ^ 707 ^ 000SD7S T ' 3 3 - / 3 2SD1397« N PN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1223C Features: . High breakdown voltage and high reliability.
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000SD7S
2SD1397«
1223C
IS-126
1S-126A
IS-20MA
2SD1397
2SC2271
transistor 2SC2271
2S01397
ic 30359
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PDF
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2SA1238
Abstract: bc 147 B transistor transistor BC 147
Text: SA NY O S E M I C O N D U C T O R CORP 3SE D • 7 T T 7 0 7 b 0 G 0 Ô Û 2 7 7 Hi . tiifiîin'i :.j_w PNP Epitaxial Planar Silicon Transistor 2029A a! "T-Zf-li Differential Amp Applications D968C Applications . Differential amp, current mirror. Features
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D968C
T-91-20
SC-43
2SA1238
bc 147 B transistor
transistor BC 147
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Untitled
Abstract: No abstract text available
Text: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage V CE = 40V 0.110(2.80) • Collector current I C = 600mA
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MMBT4401
600mA
2002/95/EC
IEC61249
OT-23,
MIL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 15V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives
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MMBT2369A
200mA
2002/95/EC
OT-23,
MIL-STD-750,
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PDF
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la 1201 sanyo
Abstract: IS-313D 2SB1273 QDQ4127 b1251 n1cj EIAJ CP 301 30H150
Text: SANYO SEMICONDUCTOR CORP la E t I 71=170?t QD04127 3 P T'-33-!c 2SB1273 PNP Epitaxial Planar Silicon Transistor 2010A Low Frequency Power Amp Applications 2332 Applications . Power amp Features . Wide ASO adoption of MBIT process) . Low saturation voltage
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2SB1273
QDQ4127
0dgb752
la 1201 sanyo
IS-313D
2SB1273
b1251
n1cj
EIAJ CP 301
30H150
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PDF
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Untitled
Abstract: No abstract text available
Text: DMMT3904W MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • MECHANICAL DATA • Case: SOT-363, Plastic
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DMMT3904W
200mA
OT-363,
MIL-STD-750,
2011-REV
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA 0.087(2.20) 0.070(1.80)
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Original
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MMBT3904W
OT-323
200mA
2002/95/EC
IEC61249
OT-323,
MIL-STD-750,
2010-REV
RB500V-40
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PDF
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2SK315
Abstract: DDD3710 SILICON TRANSISTOR FS 2025 2030a la 1201 sanyo
Text: S ANYO SEMICONDUCTOR 2SK315 CORP 15E D I 7TT?Q7b 1 00053^7 T- 3J~2 ^ I N -C h a n n e l Ju n c tio n Silico n F ie ld -E ffe ct Transistor 2040 FM Tuner Applications 1005B Features Ideal for FM tuners in radios, stereos, etc. . Because it is compactly packaged, sets can be made compact.
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2SK315
1005B
0DGB752
DDD3710
SILICON TRANSISTOR FS 2025
2030a
la 1201 sanyo
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PDF
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Untitled
Abstract: No abstract text available
Text: S ANYO SEMICONDUCTOR 2SK315 CORP 15E D I 7TT?Q7b 1 00053^7 T- 3J~2 ^ I N -C h a n n e l Ju n c tio n Silico n F ie ld -E ffe ct Transistor 2040 FM Tuner Applications 1005B Features Ideal for FM tuners in radios, stereos, etc. . Because it is compactly packaged, sets can be made compact.
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OCR Scan
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2SK315
1005B
1S-126A
IS-20MA
IS-313
IS-313A
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PDF
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Untitled
Abstract: No abstract text available
Text: MMDT3906 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 200 mWatts POWER 40 Volts SOT-363 FEATURES Unit：inch mm 0.087(2.20) 0.074(1.90) • PNP epitaxial silicon, planar design 0.010(0.25) • Collector-emitter voltage V CE = -40V • Collector current I C = -200mA
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MMDT3906
-200mA
OT-363
OT-363,
MIL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE 400 Volt POWER 225 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • Silicon, planar design 0.110(2.80) • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • Lead free in compliance with EU RoHS 2011/65/EU directive
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MMBTA44
300mA
2011/65/EU
IEC61249
OT-23,
MIL-STD-750,
2014-REV
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PDF
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2306E
Abstract: 20328 3020v
Text: S T S 2306E S amHop Microelectronics C orp. Dec. 26 2006 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable. S urface Mount P ackage.
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2306E
OT-23
25M-T
OT-23
2306E
20328
3020v
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PDF
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2N389
Abstract: 2N424 l73a AAZ marking
Text: i c | 00001B5 HIL SPECS DOOltjfll b | MIL-S-1950 0 /17 3 A 24 November 1964-_ SUPERSEDING MIL-S-19500/1 7 3 NAVY 7 April 1961 MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON TYPES 2N389 AND 2N424 This specification Is mandatory for use by all Departments and
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MIL-S-19500/173A
MIL-S-I95OO/173
2N389
2N424
MIL-S-19500
T0-53)
2N424
l73a
AAZ marking
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PDF
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transistor M 9741
Abstract: G40pC TA 2025 B 2SC3065 0GS71b S74B
Text: S AN Y O SEMICONDUCTOR CORP 3SE D TW QTb DDGflflm ^ , 1 a T -2 ?'2 7 N P N Epitaxial Planar S ilico n C o m p o site Transistor 2029A Differential Amp Applications S74B Applications . Differential amp, current mirror. Features . Excellent in thermal equilibrium
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T-29-27
T-91-20
SC-43
transistor M 9741
G40pC
TA 2025 B
2SC3065
0GS71b
S74B
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts 0.004 0.10 MIN. • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = -40V • Collector current I C = -200mA • Lead free in comply with EU RoHS 2002/95/EC directives.
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Original
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MMBT3906W
-200mA
2002/95/EC
IEC61249
OT-323,
MIL-STD-750,
2010-REV
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PDF
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MMBT3904
Abstract: No abstract text available
Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit：inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,
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Original
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MMBT3904
200mA
300MHz
10mAdc,
20Vdc
100MHz
2002/95/EC
IEC61249
OT-23
OT-23,
MMBT3904
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.120 3.04 • Collector-emitter voltage V CE = 15V 0.110(2.80) • Collector current I C = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives.
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Original
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MMBT2369A
200mA
2002/95/EC
IEC61249
OT-23,
MIL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.120 3.04 • Collector-emitter voltage V CE = 15V 0.110(2.80) • Collector current I C = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives.
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Original
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MMBT2369A
200mA
2002/95/EC
IEC61249
OT-23,
MIL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT5551 NPN HIGH VOLTAGE TRANSISTOR POWER 160 Volts 250 mWatts FEATURES 0.006 0.15 MIN. VOLTAGE 0.120(3.04) 0.110(2.80) • NPN Silicon, planar design • Collector-emitter voltage V CE = 160V • Collector current I C = 300mA • Lead free in compliance with EU RoHS 2011/65/EU directive
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Original
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MMBT5551
300mA
2011/65/EU
IEC61249
OT-23,
MIL-STD-750,
2012-REV
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PDF
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2SC3174
Abstract: DDGM314
Text: SANYO SEMICONDUCTOR CORP 12E D I 2SC3174 T - 33-1 NPN Epitaxial Planar Silicon Transistor aoioA 1310B 7117071= DGG4313 C R T Display Horizontal Deflection Output Applications with Damper Diode Features: • High switching speed • Especially suited for use in high-definition CRT display(Vcc=6 to 12V)
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2SC3174
1310B
0DGB752
DDGM314
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PDF
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