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    TRANSISTOR C 838 Search Results

    TRANSISTOR C 838 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 838 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DA QG

    Abstract: No abstract text available
    Text: IPB065N06L G IPP065N06L G "%&$!"# Power-Transistor Product Summary Features P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< V 9H .( J R  , ? >=1G .&- Y" I9 0( 6 P   S ? @5A1C 9>7 C 5=@5A1C


    Original     		PDF IPB065N06L IPP065N06L DA QG

    Super-247 Package

    Abstract: IRG4PSC71UD
    Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than


    Original     		PDF 1682A IRG4PSC71UD Super-247 O-247 Super-247 Package IRG4PSC71UD

    irg4bc40

    Abstract: IRG4BC40W
    Text: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 1654A IRG4BC40W an52-7105 irg4bc40 IRG4BC40W

    Untitled

    Abstract: No abstract text available
    Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than


    Original     		PDF 1682A IRG4PSC71UD Super-247 O-247

    Untitled

    Abstract: No abstract text available
    Text: PD - 91629A IRG4BC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 1629A IRG4BC30W

    IRG4BC30W

    Abstract: No abstract text available
    Text: PD - 91629A IRG4BC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 1629A IRG4BC30W IRG4BC30W

    IRG4PC50W

    Abstract: *g4pc50w TO-3P Jedec package outline
    Text: PD - 91657B IRG4PC50W INSULATED GATE BIPOLAR TRANSISTOR C Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 91657B IRG4PC50W hi252-7105 IRG4PC50W *g4pc50w TO-3P Jedec package outline

    *g4pc50w

    Abstract: IRG4PC50W IRG4PC50W EQUIVALENT GE-5040
    Text: PD - 91657B IRG4PC50W INSULATED GATE BIPOLAR TRANSISTOR C Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 91657B IRG4PC50W *g4pc50w IRG4PC50W IRG4PC50W EQUIVALENT GE-5040

    Untitled

    Abstract: No abstract text available
    Text: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 1654A IRG4BC40W

    da5 diode

    Abstract: BC519 IPB048N06L IPP048N06L DA QG marking 1bc
    Text: IPP048N06L G IPB048N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J ,&, Y" ( 6 P   S ? @5A1C


    Original     		PDF IPP048N06L IPB048N06L da5 diode BC519 DA QG marking 1bc

    3p transistor

    Abstract: IRG4PC30W
    Text: PD - 91628A IRG4PC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 1628A IRG4PC30W 3p transistor IRG4PC30W

    IRG4BC40W

    Abstract: irg4bc40 354 GE
    Text: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 1654A IRG4BC40W IRG4BC40W irg4bc40 354 GE

    IRG4BC30W

    Abstract: No abstract text available
    Text: PD - 91629A IRG4BC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 1629A IRG4BC30W IRG4BC30W

    IRG4PC30W

    Abstract: No abstract text available
    Text: PD - 91628A IRG4PC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 1628A IRG4PC30W IRG4PC30W

    Untitled

    Abstract: No abstract text available
    Text: PD - 91628A IRG4PC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF 1628A IRG4PC30W

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    58W SOT

    Abstract: BLW85 ZL18
    Text: N AMER P H I L I P S / D IS C R ET E b ^E D b b S 3 T 31 • 0 0 2 ^ 4 ^ 574 IAPX D L V V O O A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f, transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and


    OCR Scan     		PDF bbS3T31 BLW85 7Z77540 7Z77541 58W SOT BLW85 ZL18

    BLW 82

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and


    OCR Scan     		PDF bb53T31 BLW 82

    od300

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER T he 2S C 5 2 8 9 is ideal fo r the final stag e am p lifie r in 1.9G H z-band digital cord le ss phones D EC T, PHS, etc. . PA C K A G E D R AW IN G (Unit: mm)


    OCR Scan     		PDF 2SC5289 SC-61 2SC5289-T1 od300

    431202036640 choke

    Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
    Text: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and


    OCR Scan     		PDF BLW85 QQb3357 431202036640 choke CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit

    MPQ3762

    Abstract: it 051 1N916 2N3762 tup pnp transistor
    Text: M P Q silicon 3 7 6 2 QUAD DUAL IN-LINE PNP SILICON ANNULAR MEMORY DRIVER TRANSISTOR QUAD DUAL-IN-LINE PNP SILICON MEMORY DRIVER TRANSISTOR . . . designed fo r high-current, high-speed switching. • Low Collector-E m itter Saturation Voltage — VC E (sat) s 0 .5 5 V d c (M ax) @ l c s 5 0 0 m Adc


    OCR Scan     		PDF MPQ3762 120ns 2N3762 O-116 30Vdc 1N916 MPQ3762 it 051 1N916 2N3762 tup pnp transistor

    1.4464

    Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
    Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S


    OCR Scan     		PDF 2SC5289 2SC5289 SC-61 2SC5289-T1 1.4464 NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473

    TRANSISTOR J 5804 NPN

    Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.


    OCR Scan     		PDF 2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF

    2SC5012-T1

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •


    OCR Scan     		PDF 2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1