transistor 8026
Abstract: 2SC5245 FH105
Text: Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2160 [FH105] 0.25 6 5 4 E2 1 2 0.65 2.0 Tr2 C1 B2 1 : Collector1 2 : Base2 3 : Collector2
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ENN6219
FH105
FH105]
FH105
2SC5245,
transistor 8026
2SC5245
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2SC5245
Abstract: FH105 IT00323 transistor 8026
Text: Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2160 [FH105] 0.25 6 5 4 E2 1 2 0.65 2.0 Tr2 C1 B2 1 : Collector1 2 : Base2 3 : Collector2
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ENN6219
FH105
FH105]
FH105
2SC5245,
2SC5245
IT00323
transistor 8026
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transistor Bf 966
Abstract: kf 982 AN1026 S21E UPA895TD UPA895TD-T3 2412 NEC
Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: Units in mm Package Outline TD (TOP VIEW) 1.2 mm x 0.8 mm • UPA895TD 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: C1 6 B1
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UPA895TD
UPA895TD
NE851
transistor Bf 966
kf 982
AN1026
S21E
UPA895TD-T3
2412 NEC
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Hitachi DSA002715
Abstract: No abstract text available
Text: HA1127, HA1127P, HA1127FP 5 Transistor Arrays Ordering Information Application Type No. Package Commercial use HA1127 DP-14 Industrial use HA1127P DP-14 HA1127FP FP-14DA Pin Arrangement C1 1 14 C5 B1 2 13 E5 substrate E1 3 12 B5 B2 4 11 C4 C2 5 10 E4 B2
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HA1127,
HA1127P,
HA1127FP
HA1127
HA1127P
HA1127FP
DP-14
FP-14DA
Hitachi DSA002715
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HA1127
Abstract: Hitachi DSA0076 HA1127P DP-14 FP-14DA HA1127FP
Text: HA1127/P/FP 5 Transistor Arrays ADE-204-062 Z Rev. 0 Dec. 2000 Ordering Information Application Type No. Package Commercial use HA1127 DP-14 Industrial use HA1127P DP-14 HA1127FP FP-14DA Pin Arrangement C1 1 14 C5 B1 2 13 E5 (substrate) E1 3 12 B5 B2 4 11
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HA1127/P/FP
ADE-204-062
HA1127
DP-14
HA1127P
HA1127FP
FP-14DA
HA1127
Hitachi DSA0076
HA1127P
DP-14
FP-14DA
HA1127FP
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RA33H1516M1
Abstract: RA33H1516M1-101 VDD1015
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RA33H1516M1-101
VDD1015
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ra33h1516m1
Abstract: RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RA33H1516M1-101
RF MODULE CIRCUIT DIAGRAM
trichloroethylene
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PDF
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ra33h1516m1
Abstract: RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RF power amplifier 10mW
RF MOSFET MODULE
RF MODULE CIRCUIT DIAGRAM for channel 4
MOSFET Amplifier Module
v 33w
marking transistor RF
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ATC100B
Abstract: TRANSISTOR Z4 MAPLST1617-030CF
Text: RF Power Field Effect Transistor LDMOS, 1600 — 1700 MHz, 30W, 28V 5/5/05 MAPLST1617-030CF Preliminary Features Package Style Designed for INMARSAT applications in the 1620-1670 MHz frequency band. Typical Two Tone Performance IMD=-30 dBc : Average Output Power: 15W
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MAPLST1617-030CF
1670MHz)
ATC100B
TRANSISTOR Z4
MAPLST1617-030CF
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RA35H1516M
Abstract: RA35H1516M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to
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RA35H1516M
154-162MHz
RA35H1516M
40-watt
162-MHz
RA35H1516M-101
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RF MOSFET MODULE
Abstract: RA35H1516M RA35H1516M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to
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RA35H1516M
154-162MHz
RA35H1516M
40-watt
162-MHz
RF MOSFET MODULE
RA35H1516M-01
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RA35H1516M
Abstract: RA35H1516M-01 RA35H1516M-E01 162MHz
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to
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RA35H1516M
154-162MHz
RA35H1516M
40-watt
162-MHz
RA35H1516M-01
RA35H1516M-E01
162MHz
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PCF7931AS
Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
Text: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
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87C528
X3A-KTY181/1
X3A-OH155
PCF7931AS
PCF7935AS
PCF79730S-3851
PCF7931
PCF7935
PCF7931XP/C
PCF79730S
pcf79735S
PHILIPS PCF7935AS
TDA4859ps
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RA33H1516M1
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
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RA35H1516M-101
Abstract: RA35H1516M 40Wat amp circuit diagrams 400w RF amplifier 400W
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to
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RA35H1516M
154-162MHz
RA35H1516M
40-watt
162-MHz
RA35H1516M-101
40Wat
amp circuit diagrams 400w
RF amplifier 400W
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the
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RA35H1516M
154-162MHz
RA35H1516M
40-watt
162-MHz
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RF power amplifier 10mW
Abstract: RA33H1516M1 473 marking code transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RF power amplifier 10mW
473 marking code transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
Oct2011
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PDF
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amp circuit diagrams 400w
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the
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RA35H1516M
154-162MHz
RA35H1516M
40-watt
162-MHz
amp circuit diagrams 400w
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PDF
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PCF7952
Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.
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VP22480-3
VP22480-5
VP22530-2
PCF7952
pcf7944
BGY270
PCF7944AT
ON769
ON961
TDA10086HT
pch7970
PCF7341
OH191
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BPT23C02
Abstract: transistor 200 watt 28 v 0-30 mhz 30GHz transistor
Text: BIPOLARICS, INC. Part Number BPT23C02 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT23C02 is a high performance silicon bipolar transistor intended for use in
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BPT23C02
BPT23C02
transistor 200 watt 28 v 0-30 mhz
30GHz transistor
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lc 945 p transistor
Abstract: AT-00511 transistor LC 945 T773 lc 945 transistor
Text: HEW LETT-PACKARD/ CMPNTS b lE » • W fâ« HEW LETT mLfim PACKARD 4447-504 Features • • • • • • SSQ H H P A □ □ □ C1 77 E AT-00511 Surface Mount General Purpose Silicon Bipolar Transistor SOT-143 Plastic Package 11 dB Typical P|dB at 2.0 GHz
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M447SA4
0DDT77E
AT-00511
AT-00511
OT-143
lc 945 p transistor
transistor LC 945
T773
lc 945 transistor
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2SC1624
Abstract: 2sc1625 2SA814 3c46 2SA815 AC75
Text: 2 s c 1624 2 s c 1625 O 660 SI ^ K SILICON NPN EPITAXIAL BASE M ESA Unit TRANSISTOR in m m 2s c 1624 2s c 1625 ELECTRICAL CHARACTERISTICS CHARACTERISTIC 3 \y » ^ 5 * * * 3 » SYMBOL I CBO Vq b ^ 5 0 7 * L + m *EBO V EB= n m • X. i y f •'î-xflflfcttSŒ
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OCR Scan
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2sc1624
2sc1625
2SC1624)
2SC1625)
2SA814,
2SA815
2SA814
2SA815
2SC1624
2sc1625
3c46
AC75
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