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    TRANSISTOR C107 M Search Results

    TRANSISTOR C107 M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C107 M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    capacitor marking c106

    Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


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    PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA PDF

    CQ1265RT

    Abstract: CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt
    Text: www.fairchildsemi.com FSCQ-Series FSCQ0565RT / FSCQ0765RT / FSCQ0965RT / FSCQ1265RT FSCQ1465RT / FSCQ1565RT / FSCQ1565RP Green Mode Fairchild Power Switch FPSTM Features • Optimized for Quasi-Resonant Converter (QRC) • Advanced Burst-Mode Operation for under 1W Standby


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    FSCQ0565RT FSCQ0765RT FSCQ0965RT FSCQ1265RT FSCQ1465RT FSCQ1565RT FSCQ1565RP 230VAC CQ1265RT CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt PDF

    CQ0765RT circuit diagram

    Abstract: CQ0765 10uf, 35v electrolytic capacitor cq1265rt schematic diagram cq0765rt VR201
    Text: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a


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    Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ0765RT circuit diagram CQ0765 10uf, 35v electrolytic capacitor cq1265rt schematic diagram cq0765rt VR201 PDF

    CQ1265RT

    Abstract: CQ0765RT circuit diagram cq1565rt cq0965rt CQ0765RT CQ1465RT cq1265rt schematic diagram CQ0765 CQ0765R cq1265
    Text: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a


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    Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ1265RT CQ0765RT circuit diagram cq1565rt cq0965rt CQ0765RT CQ1465RT cq1265rt schematic diagram CQ0765 CQ0765R cq1265 PDF

    CQ0765RT

    Abstract: CQ1265RT CQ1565RT cq0765rt TRANSISTOR CQ0765RT circuit diagram cq1265 cq0565rt CQ1465RT cq0965rt FSCQ0565RTYDTU
    Text: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a


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    Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ0765RT CQ1265RT CQ1565RT cq0765rt TRANSISTOR CQ0765RT circuit diagram cq1265 cq0565rt CQ1465RT cq0965rt FSCQ0565RTYDTU PDF

    cctv camera circuit diagram

    Abstract: transistor digital C103 transistor c111 c103 TRANSISTOR C111 transistor ccd cctv camera circuit diagram TRANSISTOR C103 12v and 5v regulated power supply circuit diagram C105 Diode partsnic
    Text: Multi-CH Power Supply IC for Color CCD Camera www.ad-tech.co.kr ADT7210 General Description The ADT7210 is system specific power IC that is suitable for color CCD camera. ADT7210 0638 Other features include over-current protection, UVLO and thermal shutdown. It reduces design


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    ADT7210 ADT7210 28MLF, cctv camera circuit diagram transistor digital C103 transistor c111 c103 TRANSISTOR C111 transistor ccd cctv camera circuit diagram TRANSISTOR C103 12v and 5v regulated power supply circuit diagram C105 Diode partsnic PDF

    TP212

    Abstract: c102 TRANSISTOR SM0402 IN4148W c103 TRANSISTOR samsung reflow profile TP209-TP212 CDRH8D28-4R7 transistor c100b c106 TRANSISTOR
    Text: ISL8502EVAL1Z: 2.5A Synchronous Buck Regulator with Integrated MOSFETs Application Note 2.5A Synchronous Buck Regulator with Integrated MOSFETs The ISL8502 is a synchronous buck controller with internal MOSFETs packaged in a small 4mmx4mm QFN package. The ISL8502 can support a continuous load of 2.5A and has


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    ISL8502EVAL1Z: ISL8502 AN1277 TP212 c102 TRANSISTOR SM0402 IN4148W c103 TRANSISTOR samsung reflow profile TP209-TP212 CDRH8D28-4R7 transistor c100b c106 TRANSISTOR PDF

    DSC 10D-11

    Abstract: pbs406gu PBS406G ct 5d-11 NTC 5D-11 electrolytic capacitor C109 C110 1000uf FAN7554 dsc 5d-11 marking code diode R112 9V 1A smps
    Text: www.fairchildsemi.com FAN7554 Versatile PWM Controller Features Description • • • • • • • • • • • • • • • The FAN7554 is a fixed frequency current mode PWM controller. It is specially designed for off-line and DC to DC converter applications with minimal external components.


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    FAN7554 V/15V 100uA 200uA 500kHz FAN7554 FAN7554D FAN7554DTF DSC 10D-11 pbs406gu PBS406G ct 5d-11 NTC 5D-11 electrolytic capacitor C109 C110 1000uf dsc 5d-11 marking code diode R112 9V 1A smps PDF

    SMD r801

    Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


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    PTFA220041M PTFA220041M SMD r801 TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223 PDF

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


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    PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 PDF

    c103 TRANSISTOR

    Abstract: c103 mosfet TRANSISTOR Viper22 application PA2865NL PA2685NL AT-339 FOD121 c103 TRANSISTOR equivalent viper22 transistor c114
    Text: National Semiconductor RD-166 Product Applications Design Center December 2008 1.0 Design Specifications Inputs Output #1 VinMin=100V Vout1=5V VinMax=240V Iout1=0.5A 2.0 Design Description Preface Every year, millions of Watts are lost in heat from inefficient


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    RD-166 CSP-9-111S2) CSP-9-111S2. c103 TRANSISTOR c103 mosfet TRANSISTOR Viper22 application PA2865NL PA2685NL AT-339 FOD121 c103 TRANSISTOR equivalent viper22 transistor c114 PDF

    c102 TRANSISTOR

    Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


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    PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PDF

    transistor c118

    Abstract: C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124
    Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency


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    PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 a080304 transistor c118 C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124 PDF

    smd transistor 12W 3 pins

    Abstract: Q321 transistor SMD 12W MOSFET VARISTOR 5D-9 AN-4150 TRANSISTOR SMD 13W KA431 SMD 12W SMD MOSFET EER2828 BOBBIN optocoupler FOD817a
    Text: FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Green Mode Fairchild Power Switch FPS for Valley Switching Converter - Low EMI and High Efficiency Features Description „ Optimized for Valley Switching (VSC) A Valley Switching Converter generally shows lower EMI


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    FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 FSQ311 smd transistor 12W 3 pins Q321 transistor SMD 12W MOSFET VARISTOR 5D-9 AN-4150 TRANSISTOR SMD 13W KA431 SMD 12W SMD MOSFET EER2828 BOBBIN optocoupler FOD817a PDF

    c151 nec

    Abstract: transistor c815 optocoupler c814 TR-303 nec c815 pdf transistor c815 NEC C812 TR303 c815 nec c811
    Text: MLX32001 Universal PSTN Line Interface 1. Features and Benefits § § § § § § § CLIP / Caller-ID support Line status measuring facilities Line event registration Lightning safe Pre-programming of default settings Powered by PSTN line less than 10 µA power consumption during offline


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    MLX32001 MLX32001EE-SO16WREEL CH-2022 MLX32001 c151 nec transistor c815 optocoupler c814 TR-303 nec c815 pdf transistor c815 NEC C812 TR303 c815 nec c811 PDF

    tl241

    Abstract: TL239 TRANSISTOR tl131 7827 Transistor TL131 TL245 P100ECT-ND tl113 445-1474-2-ND TL235
    Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


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    PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6, H-34288-6, tl241 TL239 TRANSISTOR tl131 7827 Transistor TL131 TL245 P100ECT-ND tl113 445-1474-2-ND TL235 PDF

    IC801

    Abstract: transistor Q801 TRANSISTOR tl131 PTFB212503 cq801 PTFB212503FL TL239 q801 A157 TRANSISTOR c104
    Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


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    PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt H-33288-6 H-34288-6 IC801 transistor Q801 TRANSISTOR tl131 PTFB212503 cq801 TL239 q801 A157 TRANSISTOR c104 PDF

    transistor c114

    Abstract: smd transistor footprint transisTOR C124 c102 TRANSISTOR transistor SMD J9 C114 transistor transisTOR C123 RK73H1JT*1002F YAGEO resistor RK73H1JT1000F
    Text: Application Note 1528 ISL8120EVAL3Z Evaluation Board Setup Procedure ISL8120EVAL3Z Evaluation Board FIGURE 1. ISL8120EVAL3Z EVALUATION BOARD The ISL8120 integrates two voltage-mode synchronous buck PWM controllers. It can be used either for dual independent outputs or a 2-phase


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    ISL8120EVAL3Z ISL8120 320nH 500kHz AN1528 ISL8120EVAL3Z transistor c114 smd transistor footprint transisTOR C124 c102 TRANSISTOR transistor SMD J9 C114 transistor transisTOR C123 RK73H1JT*1002F YAGEO resistor RK73H1JT1000F PDF

    npn TRANSISTOR c105

    Abstract: 3PHA 20 TRANSISTOR c105 HA13609ANT phenom 2 955 diagram c105 TRANSISTOR Transistor No C110 3PHA PNP power transistors by hitachi Hitachi DSA00279
    Text: HA13609ANT Three-Phase Brushless Motor Driver ADE-207-232 Z 1st. Edition May 1997 Description The HA13609A NT is a 3-pha se brushless motor drive r IC with digita l spee d contr ol. It is designe d for use as a PPC or LBP scanner motor driver and provides the functions and features listed below.


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    HA13609ANT ADE-207-232 HA13609A 16-bit D-85622 npn TRANSISTOR c105 3PHA 20 TRANSISTOR c105 HA13609ANT phenom 2 955 diagram c105 TRANSISTOR Transistor No C110 3PHA PNP power transistors by hitachi Hitachi DSA00279 PDF

    RO6006

    Abstract: TRANSISTOR c105 capacitor 6800 uf r812 R809 PTVA101K02EV 011022 1030-1090MHz SK101M100ST
    Text: PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with


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    PTVA101K02EV PTVA101K02EV H-36275-4 RO6006 TRANSISTOR c105 capacitor 6800 uf r812 R809 011022 1030-1090MHz SK101M100ST PDF

    transisTOR C124

    Abstract: c124 transistor transisTOR C123 bav21 29C125 3P1012 G103 1kV transistor c128
    Text: 100MHz Low Cost Triple CRT Driver CORPORATION CVA2412AX FEATURES • • • • • DESCRIPTION Ease of Use Small Heat Sink OSD Option EMI Control Option Excellent Gray Scale Linearity APPLICATIONS • CRT Displays for 1600 x 1280 Resolution with Pixel Clock Frequency up to 270MHz


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    100MHz CVA2412AX 270MHz CVA2412AX 85kHz CRT101 SP101 SP102 SP103 transisTOR C124 c124 transistor transisTOR C123 bav21 29C125 3P1012 G103 1kV transistor c128 PDF

    murata CFW455e

    Abstract: cfw455e TOKO 455E
    Text: HA12441V Narrow Band Width FM-IF The HA12441V is an IC designed for narrow band width FM-IF. It provides the following functions and features. Functions • • • • • • • Local Oscillator Mixer IF Amplifier FM Detector Electric Field-strength Detector


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    HA12441V HA12441V HA12442V murata CFW455e cfw455e TOKO 455E PDF

    Untitled

    Abstract: No abstract text available
    Text: HA12442V Narrow Band Width FM-IF The HA12442V is an IC designed for narrow band width FM-IF and is available for 58 MHz. It provides the following functions and features. Functions Local Oscillator Mixer IF Amplifier FM Detector Electric Field-strength Detector


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    HA12442V HA12442V SP-16) A12442V PDF

    TRANSISTOR BC 137

    Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
    Text: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.


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    023SbGS BC107, BC1071Â Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 BC108 Q60203-X108-A Q60203-X108-B TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107 PDF