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    TRANSISTOR C114 DIAGRAM Search Results

    TRANSISTOR C114 DIAGRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C114 DIAGRAM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor c114 diagram

    Abstract: SWITCHING TRANSISTOR C114 transistor c114 digital transistor c114 AN1994 diode d1n4148 STA508 AN1965 STA505 STA50X
    Text: AN1994 APPLICATION NOTE STA50X DIGITAL POWER FAMILY This applicationnote is related to the STA50X series of DDX high efficiency output stages. 1 PIN DESCRIPTION Table 1. STA500, STA505, STA506, STA508 Pin N’ Pin Name 1 GND_sub 2 OUT2B Output Half Bridge 2B


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    AN1994 STA50X STA500, STA505, STA506, STA508 transistor c114 diagram SWITCHING TRANSISTOR C114 transistor c114 digital transistor c114 AN1994 diode d1n4148 STA508 AN1965 STA505 PDF

    SWITCHING TRANSISTOR C114

    Abstract: transistor c114 diagram transistor c114 transistor c114 diagrams AN1994 transistor c114 chip ESR C114 transistor STA508 STA50X 100nF 63V polyester capacitor
    Text: AN1994 APPLICATION NOTE STA50X DIGITAL POWER FAMILY This applicationnote is related to the STA50X series of DDX high efficiency output stages. 1 PIN DESCRIPTION Table 1. STA500, STA505, STA506, STA508 Pin N’ Pin Name 1 GND_sub 2 OUT2B Output Half Bridge 2B


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    AN1994 STA50X STA500, STA505, STA506, STA508 SWITCHING TRANSISTOR C114 transistor c114 diagram transistor c114 transistor c114 diagrams AN1994 transistor c114 chip ESR C114 transistor STA508 100nF 63V polyester capacitor PDF

    transistor c118

    Abstract: C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124
    Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency


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    PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 a080304 transistor c118 C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz


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    PTFB213004F PTFB213004F 300-watt H-37275-6/2 PDF

    VdS 2093 2009

    Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz


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    PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114 PDF

    transistor c114

    Abstract: RLI-135 viper 224 VIPER53 transistor c114 diagram VIPer53 Application Note c113 transistor transistor c113 VIPER53 application J107 DIODE
    Text: AN2067 APPLICATION NOTE VIPower: DIMMABLE WHITE LEDS POWER SUPPLY WITH VIPer53 In the same way that LED manufacturers succeed to realize blue LEDs, they now propose white LEDs inside a monolithic chip, or so called “singlechip white” LEDs. A current source is the more appropriate way to


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    AN2067 VIPer53 transistor c114 RLI-135 viper 224 VIPER53 transistor c114 diagram VIPer53 Application Note c113 transistor transistor c113 VIPER53 application J107 DIODE PDF

    transistor c114

    Abstract: No abstract text available
    Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency


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    PTMA080304M PTMA080304M 20-lead transistor c114 PDF

    juchheim temperature controller 703011

    Abstract: 703030 SWITCHING TRANSISTOR C114 70-303 C111 C112 C113 C114 SP03 EN100015
    Text: JdTRON 16.1 Compact microprocessor controller B 70.3011 Operating Manual 07.01/00346816 ! ! E Please read this Manual carefully before starting up the instrument. Keep this Manual in a place which is at all times accessible to all users. Please assist us to improve this Manual


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    1-800-554-JUMO juchheim temperature controller 703011 703030 SWITCHING TRANSISTOR C114 70-303 C111 C112 C113 C114 SP03 EN100015 PDF

    30w subwoofer circuit diagram

    Abstract: subwoofer preamplifier circuit diagram transistor subwoofer circuit diagram subwoofer amplifier circuit diagram ACTIVE SUBWOOFER WITH AMP Active subwoofer circuit 2.1 channel subwoofer amplifier circuit diagram subwoofer preamplifier circuit 12v subwoofer amp circuits bass control in stereo 12v active subwoofer IC
    Text: Maxim > App Notes > Audio Circuits Keywords: audio, class-d, classd, amplifier, power, active filter, mp3, active eq, woofer, subwoofer, tweeter, 2.1 channel, high pass filter, parametric eq, sallen-key filter, speaker, speakers Feb 27, 2009 APPLICATION NOTE 4320


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    MAX9736 com/an4320 MAX9736A: MAX9736B: AN4320, APP4320, Appnote4320, 30w subwoofer circuit diagram subwoofer preamplifier circuit diagram transistor subwoofer circuit diagram subwoofer amplifier circuit diagram ACTIVE SUBWOOFER WITH AMP Active subwoofer circuit 2.1 channel subwoofer amplifier circuit diagram subwoofer preamplifier circuit 12v subwoofer amp circuits bass control in stereo 12v active subwoofer IC PDF

    J103 transistor

    Abstract: transistor c223
    Text: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced


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    PTFB072707FH PTFB072707FH b072707fh-gr1 J103 transistor transistor c223 PDF

    2.1 channel subwoofer amplifier circuit diagram

    Abstract: transistor subwoofer circuit diagram 30w subwoofer circuit diagram subwoofer preamplifier circuit diagram active subwoofer circuit diagram subwoofer filter circuit diagram ACTIVE SUBWOOFER WITH AMP npn TRANSISTOR c105 subwoofer box diagram c105 TRANSISTOR
    Text: Maxim > App Notes > Audio Circuits Keywords: audio, class-d, classd, amplifier, power, active filter, mp3, active eq, woofer, subwoofer, tweeter, 2.1 channel, high pass filter, parametric eq, sallen-key filter, speaker, speakers Feb 27, 2009 APPLICATION NOTE 4320


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    MAX9736 com/an4320 MAX9736A: MAX9736B: AN4320, APP4320, Appnote4320, 2.1 channel subwoofer amplifier circuit diagram transistor subwoofer circuit diagram 30w subwoofer circuit diagram subwoofer preamplifier circuit diagram active subwoofer circuit diagram subwoofer filter circuit diagram ACTIVE SUBWOOFER WITH AMP npn TRANSISTOR c105 subwoofer box diagram c105 TRANSISTOR PDF

    c102 TRANSISTOR

    Abstract: TESTING A c114 transistor transistor c114 transistor c102 Hitachi motor driver HA13614FH C116 transistor c10501 transistor c117 Combo Driver
    Text: HA13614FH Combo Spindle & VCM Driver ADE-207-246D (Z) Preliminary, 5th Edition Oct. 1, 1998 Description This COMBO driver for HDD application consists of sensorless spindle driver and BTL type VCM driver. “PWM soft switching function” for low power dissipation and less commutation acoustic noise at the same


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    HA13614FH ADE-207-246D FP-48T c102 TRANSISTOR TESTING A c114 transistor transistor c114 transistor c102 Hitachi motor driver HA13614FH C116 transistor c10501 transistor c117 Combo Driver PDF

    c102 TRANSISTOR

    Abstract: C102 M transistor transistor c102 c103 K c103 TRANSISTOR transistor c114 HA13614FH c112 TRANSISTOR transistor c114 diagram Hitachi motor driver
    Text: HA13614FH Combo Spindle & VCM Driver ADE-207-246D (Z) Preliminary 5th Edition October 1998 Description This COMBO driver for HDD application consists of sensorless spindle driver and BTL type VCM driver. “PWM soft switching function” for low power dissipation and less commutation acoustic noise at the same


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    HA13614FH ADE-207-246D FP-48T c102 TRANSISTOR C102 M transistor transistor c102 c103 K c103 TRANSISTOR transistor c114 HA13614FH c112 TRANSISTOR transistor c114 diagram Hitachi motor driver PDF

    transistor c124

    Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


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    PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 transistor c124 TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300 PDF

    TL306

    Abstract: TL184 TL167 TL307
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


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    PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 96stances. TL306 TL184 TL167 TL307 PDF

    transisTOR C124

    Abstract: transistor c114 transistor c114 diagram c124 transistor c107 TRANSISTOR TRANSISTOR C107 transisTOR C123 capacitor 10u 16v G103 1kV transistor c111
    Text: Improved Low Cost Triple CRT Driver CORPORATION CVA2411TX FEATURES • • • • • DESCRIPTION Ease of Use Small Heat Sink OSD Option EMI Control Option Excellent Gray Scale Linearity APPLICATIONS • CRT Displays for 1280 x 1024 Resolution with Pixel


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    CVA2411TX 160MHz CVA2411TX 69kHz BY336 JP101 1S-23C transisTOR C124 transistor c114 transistor c114 diagram c124 transistor c107 TRANSISTOR TRANSISTOR C107 transisTOR C123 capacitor 10u 16v G103 1kV transistor c111 PDF

    transisTOR C124

    Abstract: c124 transistor transisTOR C123 bav21 29C125 3P1012 G103 1kV transistor c128
    Text: 100MHz Low Cost Triple CRT Driver CORPORATION CVA2412AX FEATURES • • • • • DESCRIPTION Ease of Use Small Heat Sink OSD Option EMI Control Option Excellent Gray Scale Linearity APPLICATIONS • CRT Displays for 1600 x 1280 Resolution with Pixel Clock Frequency up to 270MHz


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    100MHz CVA2412AX 270MHz CVA2412AX 85kHz CRT101 SP101 SP102 SP103 transisTOR C124 c124 transistor transisTOR C123 bav21 29C125 3P1012 G103 1kV transistor c128 PDF

    TL250

    Abstract: TL239
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


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    PTFB093608FV PTFB093608FV H-34275G-6/2 TL250 TL239 PDF

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


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    PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


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    PTFB093608FV PTFB093608FV H-34275G-6/2 PDF

    PTFB093608

    Abstract: 32c216 PTFB093608SV c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143
    Text: PTFB093608SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


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    PTFB093608SV PTFB093608SV H-34275G-6/2 PTFB093608 32c216 c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143 PDF

    PTFB093608

    Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


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    PTFB093608FV PTFB093608FV H-37275-6/2 PTFB093608 tl2272 ptfb09360 TL258 TL103 application note tl131 TRANSISTOR c104 TL249 TL145 PDF

    ICE1HS01G

    Abstract: TRANSISTOR D206 24V 5A SMPS circuit diagram LLC resonant transformer core pc47 SMPS CIRCUIT DIAGRAM 24v transistor NPN c115 24v 5a smps 24V SMPS 200w circuit smps resonant llc
    Text: Application Note, V1.0, 22 April 2009 Application Note EVALHS-200W-ICE1HS01G 200W SMPS Evaluation Board using LLC Half Bridge Resonant Controller ICE1HS01G Power Management & Supply N e v e r s t o p t h i n k i n g . Published by Infineon Technologies AG


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    EVALHS-200W-ICE1HS01G ICE1HS01G ICE1HS01G TRANSISTOR D206 24V 5A SMPS circuit diagram LLC resonant transformer core pc47 SMPS CIRCUIT DIAGRAM 24v transistor NPN c115 24v 5a smps 24V SMPS 200w circuit smps resonant llc PDF

    ha-12442

    Abstract: 7MC-101000Z0 sumida QUADRATURE coil C102 M transistor 58.1125 C105-C106 VR206 58112,5 MHZ ha12442v
    Text: HA12442V Narrow Band Width FM-IF The HA12442V is an IC designed for narrow band width FM-IF and is available for 58 MHz. It provides the following functions and features. Functions • • • • • • • Local Oscillator Mixer IF Amplifier FM Detector


    OCR Scan
    HA12442V HA12442V 1125N1Hz ha-12442 7MC-101000Z0 sumida QUADRATURE coil C102 M transistor 58.1125 C105-C106 VR206 58112,5 MHZ PDF