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Abstract: No abstract text available
Text: 2SC3425 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3425 Industrial Applications Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 µs (max)
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C3425
Abstract: transistor 2sc3425 2SC3425
Text: 2SC3425 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3425 Industrial Applications Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 µs (max)
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2SC3425
C3425
transistor 2sc3425
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C3425
Abstract: 2SC3425
Text: 2SC3425 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3425 Industrial Applications Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications • Unit: mm Excellent switching times: tr = 1.0 s (max)
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2sc3425
Abstract: transistor 2sc3425
Text: 2SC3425 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3425 Industrial Applications Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 µs (max)
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2SC3425
2sc3425
transistor 2sc3425
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C3425
Abstract: 2SC3425
Text: 2SC3425 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3425 Industrial Applications Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications • Unit: mm Excellent switching times: tr = 1.0 s (max)
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2SC3425
C3425
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transistor c3423
Abstract: 2sc3423 c3423 transistor c3423 Y 2Sc3423 TRANSISTOR 2SA1360
Text: 2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3423 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SA1360 • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)
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2SC3423
2SA1360
transistor c3423
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transistor c3423 Y
2Sc3423 TRANSISTOR
2SA1360
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transistor c3423
Abstract: 2sc3423 transistor c3423 Y c3423 transistor 2Sc3423 TRANSISTOR
Text: 2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3423 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SA1360 • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)
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2SC3423
2SA1360
transistor c3423
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transistor c3423 Y
c3423 transistor
2Sc3423 TRANSISTOR
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transistor c3423
Abstract: C3423 transistor c3423 Y 2sc3423 2SA1360 c3423 transistor
Text: 2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3423 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SA1360 • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)
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2SC3423
2SA1360
transistor c3423
C3423
transistor c3423 Y
2sc3423
2SA1360
c3423 transistor
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C3422
Abstract: 2SC3422 2SA1359
Text: 2SC3422 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SA1359.
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2SA1359.
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C3422
Abstract: 2SC3422 2SA1359
Text: 2SC3422 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SA1359.
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2SA1359.
C3422
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c3421 transistor
Abstract: c3421 2SC3421 transistor c3421 2SA1358 C3421 TOSHIBA
Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Maximum Ratings (Tc = 25°C)
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2SA1358
c3421 transistor
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transistor c3421
2SA1358
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c3422
Abstract: No abstract text available
Text: 2SC3422 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SA1359.
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C3422
Abstract: 2SC3422 2SA1359 C342-2
Text: 2SC3422 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SA1359.
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2SA1359.
C3422
2SC3422
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C342-2
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c3421 transistor
Abstract: C3421 TOSHIBA c3421 transistor c3421 2SA1358 2SC3421
Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Absolute Maximum Ratings (Tc = 25°C)
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c3421 transistor
C3421 TOSHIBA
c3421
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2SA1358
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c3421 transistor
Abstract: c3421 2SA1358 2SC3421
Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Absolute Maximum Ratings (Ta = 25°C)
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c3421 transistor
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c3420 transistor
Abstract: C3420 Bl c3420 2SC3420
Text: 2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •
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c3420 transistor
Abstract: C3420 2SC3420 Bl c3420
Text: 2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
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c3420 transistor
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C3420
Abstract: c3420 transistor 2SC3420 Bl c3420
Text: 2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
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Bl c3420
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transistor c345
Abstract: transistor c343 smd c345 transistor c342 g10 smd transistor AN-994 D-12 IRGBC30M-S SMD-220 ic smd 342
Text: Previous Datasheet Index Next Data Sheet PD - 9.1133 IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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10kHz)
SMD-220
C-346
transistor c345
transistor c343
smd c345
transistor c342
g10 smd transistor
AN-994
D-12
IRGBC30M-S
SMD-220
ic smd 342
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transistor c342
Abstract: C342 C342-0464 Veeder-Root 7 digit 7 segment lcd display Veeder-Root brand Counter Model Programing l.E.D message display C3420 C342-0462 8 digit lcd display
Text: VEEDER-ROOT brand Electronic Totalizing Counters C342 Totalizing Counter 1 E L E C T R O N I C Ultra-compact 1/32 DIN totalizers… available with LCD or LED display and AC/DC inputs T O T A L I Z I N G All in the family - Matching C342 series products in other sections of this catalog:
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transistor c342
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C342-0464
Veeder-Root
7 digit 7 segment lcd display
Veeder-Root brand Counter Model
Programing l.E.D message display
C3420
C342-0462
8 digit lcd display
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LE C346
Abstract: No abstract text available
Text: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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10kHz)
SMD-220
C-346
4flS54S2
002013b
LE C346
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transistor c342
Abstract: LE C346 c342
Text: P D -9.1133 International IMI Rectifier IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • Short circuit rated - 1 0ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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10kHz)
IRGBC30M-S
SMD-220
C-346
transistor c342
LE C346
c342
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10-20l
Abstract: SOP8 npn Transistor Package SOP8 PNP Transistor Package
Text: MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Advance Information SCSI-2 Active Terminator Regulator Series SCSI-2 THREE-TERMINAL VOLTAGE REGULATOR SILICON MONOLITHIC INTEGRATED CIRCUIT The M C34268 is a medium current, low dropout positive voltage regulator specifically designed for use in SCSI-2 active termination circuits. This device
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C34268
MC34268
10-20l
SOP8 npn Transistor Package
SOP8 PNP Transistor Package
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR h h h h MC34268 h TECHNICAL DATA Advance Information SCSI-2 Active Terminator Regulator Series SCSI-2 THREE-TERMINAL VOLTAGE REGULATOR SILICON MONOLITHIC INTEGRATED CIRCUIT The M C34268 is a medium current, low dropout positive voltage regulator
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MC34268
C34268
MC34268
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