TRANSISTOR CB 458 Search Results

TRANSISTOR CB 458 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR CB 458 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
sot-89 marking E5 Abstract: XC6372D matsua capacitor CE Series XC6372 XC6372A XC6372A301PR XC6372B XC6372C XC6372E 456I Text: Series Dual Mode [PWM/PFM] Step-Up DC/DC Controllers/Converters ◆CMOS Low Power Consumption •Applications ◆Operating Voltage : 0.9V~10.0V ●Cellular phones, pagers ◆Output Voltage Range : 2.0V~7.0V ●Palmtops ●Cameras, video recorders ◆Output Voltage Accuracy : ±2.5%	Original	PDF	50kHz, 100kHz, 180kHz XC6372 control00 XC6372A501PR XC6372 XC6372A301PR sot-89 marking E5 XC6372D matsua capacitor CE Series XC6372A XC6372A301PR XC6372B XC6372C XC6372E 456I
BF298 Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457 Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .	OCR Scan	PDF	BCW94 BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
F20M Abstract: No abstract text available Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSU E 3 - OCTOBER 1995_ FEATURES * 400 Volt V CE0 C O M P LEM EN T A R Y TYPE - FM M T558 P A R T M A R K IN G D E T A I L - 458 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAM ETER Collector-Base Voltage	OCR Scan	PDF	FMMT458 100mA, r100V F20M
hp 1458 Abstract: 2SC4861 hp 2232 4868 Text: Ordering num ber:EN4581 2SC4861 No.4581 NPN Epitaxial Planar Silicon Transistor SA%YO UHF Converter, Local Oscillator Applications I F eatures • High cutoff frequency : fx = 6.5GHz typ. - High gain : I S21e l2= 11.5dB typ f=lGHz . • Small Cob: NF = 0.65pF typ.	OCR Scan	PDF	EN4581 2SC4861 hp 1458 hp 2232 4868
Untitled Abstract: No abstract text available Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 - SEPTEMBER 1994_ FEATURES * 400 V o lt VCE0 * 0.5 A m p c o n tin u o u s c u rre n t * Ptot= 1 W a tt REFER TO Z TX 458 FOR GRAPHS E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS.	OCR Scan	PDF	20MHz -10mA
CQ 817 Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860 Text: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.	OCR Scan	PDF	EN4580 2SC4860 CQ 817 cq 0765 TRANSISTOR cq 817 ic 4580
rank 502 fp Abstract: 2SC4863 Text: Ordering n u m b e r:E N 4 5 8 2 _ 2SC4863 N o.4582 N PN Epitaxial Planar Silicon Transistor I VHF to UHF Wide-Band Low-Noise Amp Applications F e a tu r e s •Low noise : N F = l.ld B typ f= 1GHz • H igh ga in : I S21e I 2= lld B typ (f= 1GHz)	OCR Scan	PDF	EN4582 2SC4863 rank 502 fp
2N458A Abstract: 2N458 germanium transistor pnp germanium Power Transistor germanium Germanium power Text: Datasheet 2N 458A C G IK iQ I Semiconductor Corp. PNP G E R M A N IU M POWER TR A N S ISTO R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T O -3 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION	OCR Scan	PDF	2N458A 2N458A 500mA 2N458 germanium transistor pnp germanium Power Transistor germanium Germanium power
Transistor B C 458 Abstract: c 458 c transistor 60V transistor npn 2a switching applications bd533 Transistor n 535 Text: BD533/535/537 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE TO-220 • Com plem ent to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C olle ctor Base Voltage C olle ctor Em itter Voltage	OCR Scan	PDF	BD533/535/537 BD534, BD536 BD538 O-220 BD533 BD535 BD537 Transistor B C 458 c 458 c transistor 60V transistor npn 2a switching applications Transistor n 535
Untitled Abstract: No abstract text available Text: : 8368602 SOLITRON¡ DEVICES INC^Ì DF\|fl3fc,fit,05 DDDiatl 2 f - ENGINEERING DEVICE SPECIFICATION T W NO. 6079/2N2698 SILICON TRANSISTOR GENERAL DESCRIPTION This device is an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications	OCR Scan	PDF	bfltl02 0DD12ti 6079/2N2698 12/26/6DRWN. 6079/2N269B f-23-63-K-44 12/26/62DRWN.
PA47D Abstract: PA48D UPA47D transistor 16345 TT 6053 Text: B & D Enterprises nPA47D, 48D Main & Liberty St. Russell PA 16345 /¿PA47D,48D 1- 800 - 458 - 6053 fax 814 -757 5400 *> IJ 3 NPN Silicon Epitaxial Quad Transistor High Current High Speed Switching Industrial Use h ^PA 47D,48D (i, fl-JliEI/PACKAGE DIMENSIONS	OCR Scan	PDF	uPA47D, uPA48D PA47D PA48D UPA47D transistor 16345 TT 6053
BD440 Abstract: BD442 Text: BD440/442 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD439, BD441 respectively Ô ABSOLUTE MAXIMUM RATINGS Rating Unit V cbo -60 V VcES -80 -60 V V -80 V VcEO -60 V V Emitter Base Voltage V ebo	OCR Scan	PDF	BD440/442 BD439, BD441 O-126 BD440 BD442
transistor NEC D 822 P Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.	OCR Scan	PDF	2SC4228 2SC4228 transistor NEC D 822 P
2SC4864 Abstract: sanyo lc 15011 ZS22 ic 3586 Text: Ordering number : EN 4 5 8 3 SAÊYO i No.4583 _ 2SC4864 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications Features • Low noise : NF = l.ldB typ f=lGHz •High gain: I S21e I 2= lldB typ (f= 1GHz)	OCR Scan	PDF	2SC4864 sanyo lc 15011 ZS22 ic 3586

4312 020 36640 Abstract: ferroxcube wideband hf choke Text: PHILIPS INTERNAT ION AL b5E D 751 I IPHIN Ei 711002b BLV75/12 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile	OCR Scan	PDF	711002b BLV75/12 OT-119) 4312 020 36640 ferroxcube wideband hf choke
Untitled Abstract: No abstract text available Text: I N AMER PHILIPS/DISCRETE bbsa^ai □D276H7 S^0 b^E ]> APX BSR60 to 62 y v P-N-P DARLINGTON TRANSISTORS Silicon planar transistors in plastic TO-92 envelopes, intended for industrial applications e.g. print hammer, solenoid, relay and lamp driving. N-P-N complements are the BSR50, BSR51 and BSR52.	OCR Scan	PDF	D276H7 BSR60 BSR50, BSR51 BSR52. BSR60 BSR61 BSR62 D037A50
ZTX752 equivalent Abstract: transistor 42-10a data BC369 FXTA92 BSS98 Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request	OCR Scan	PDF	ZVP2106C ZVP2110A ZVP2110C ZVP2120A ZTX788B ZVP2120C ZVP3306A ZVP3310A ZVP4105A 2110C ZTX752 equivalent transistor 42-10a data BC369 FXTA92 BSS98
TIS43 Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.	OCR Scan	PDF	2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
catalogue des transistors bipolaires de puissance Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91 Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM	OCR Scan	PDF
transistor NEC D 822 P Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624 Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.	OCR Scan	PDF	2SC4228 2SC4228 transistor NEC D 822 P NEC D 986 transistor NEC B 617 transistor NEC D 587 r44 marking transistor D 2624
MSC1002 Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition	OCR Scan	PDF	28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram
Untitled Abstract: No abstract text available Text: Panasonic Voltage Regulators AN8041S Liquid Crystal Backlight Control 1C • Overview Unit I mm The AN 8041S is an IC for control of the invertor of the liquid crystal backlight, using the PW M method. The out put voltage of D C -DC converter and the current of cath	OCR Scan	PDF	AN8041S 8041S DD15755 AN804
W1P 59 transistor Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	PDF	197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
A 564 transistor Abstract: 3181 R33 transistor A 564 Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.	OCR Scan	PDF	2SC4227 2SC4227 SC-70 A 564 transistor 3181 R33 transistor A 564

TRANSISTOR CB 458 Search Results

TRANSISTOR CB 458 Result Highlights (5)

TRANSISTOR CB 458 Datasheets Context Search

sot-89 marking E5

BF298

F20M

hp 1458

Untitled

CQ 817

rank 502 fp

2N458A

Transistor B C 458

Untitled

PA47D

BD440

transistor NEC D 822 P

2SC4864

4312 020 36640

Untitled

ZTX752 equivalent

TIS43

catalogue des transistors bipolaires de puissance

transistor NEC D 822 P

MSC1002

Untitled

W1P 59 transistor

A 564 transistor