TRANSISTOR CR NPN Search Results

TRANSISTOR CR NPN Result Highlights (5)

Part	Manufacturer	Description
CA3046	Rochester Electronics LLC	CA3046 - General Purpose NPN Transistor Array
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR CR NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BU2508AF Abstract: transistor fn 155 lem la 100p TRANSISTOR BU2508AF by228 ph transistor A6t 45 700E-15 lem HA BY228 by228 -ph Text: N AUER PHILIPS/DIS CR ET E hTE D • bbS3T31 00Efl345 OSD ■ APX Philips Semiconductors_ Product Specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack	OCR Scan	bb53T31 00Efl345 BU2508AF OT199; BU2508AF transistor fn 155 lem la 100p TRANSISTOR BU2508AF by228 ph transistor A6t 45 700E-15 lem HA BY228 by228 -ph	PDF
supersot 6 TE Abstract: Supersot 6 Text: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor	OCR Scan	FMB1020 300mA. 100uA 100mA 150mA 100MHz 100uA, 200mA, supersot 6 TE Supersot 6	PDF
transistor Y4 Abstract: complementary npn-pnp power transistors marking A1 TRANSISTOR FMB1020 marking 004 Text: D is cr ete Power S iq n a l T e ch n o lo g ie s MICDNDUCTDRtm ^ ^ FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complem entary Dual Transistor SuperSOT-6 Surface Mount Package	OCR Scan	FMB1020 300mA. 100uA 100mA 150mA 200mA, 100MHz 100uA, fmb1020 transistor Y4 complementary npn-pnp power transistors marking A1 TRANSISTOR marking 004	PDF
transistor r06 Abstract: MEL709 Text: CRÛ 1T1UJU / W NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL709 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3/4 5mm water clear package. This device is suitable for use in a light sensor of the industrial control	OCR Scan	MEL709 100uA MEL709-A of2854Â 6S477 Nov-99 transistor r06	PDF
supersot 6 TE Abstract: No abstract text available Text: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor	OCR Scan	FMB3946 100mA 100MHz 100uA, supersot 6 TE	PDF
xl 1225 transistor Abstract: BFG135 amplifier transistor B 1184 BFG135 bfg135 scattering transistor d 1557 603-30-1 BFG135 A amplifier 2222 379 UBB300 Text: nu. e „ • Philips Semiconductors 1— 1 b 1353131 0024123 21b ■ APX AMER PH IL IP S/D IS CR ET E Product specification L7E D NPN 7 GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband	OCR Scan	BFG135 OT223 MSB002 OT223. xl 1225 transistor BFG135 amplifier transistor B 1184 BFG135 bfg135 scattering transistor d 1557 603-30-1 BFG135 A amplifier 2222 379 UBB300	PDF
1117 S Transistor Abstract: sot122f Text: N AUER PH I L I PS /D IS CR ETE b'îE D • ^53131 002^722 07M H A P X Philips Sem iconductors Product_gpgcitication BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,	OCR Scan	BLY91C/01 OT122F OT122F_ 1117 S Transistor sot122f	PDF
MTPBP10 Abstract: UL-44 l44 transistor transistor L44 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L44 * BU L44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Pffcr#d Dtvtc* POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed	OCR Scan	BUL44/BUL44F MTPBP10 UL-44 l44 transistor transistor L44	PDF
QE RB 29 Abstract: si1050 Text: TOSHIBA 2SC2714 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS U nit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS +0.5 2.5 - 0.3 + 0.25 1.5 - 0.15 FEATURES : • Sma.ll Reverse Transfer Capacitance : Crö —0.7pF (Typ.)	OCR Scan	2SC2714 100MHz) QE RB 29 si1050	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR TECHNICAL DATA 2N930. NPN Silicon Small-Signal Transistor CR Y S TA IO N C S 2805 veterww Highway Veterans Hij Suite 14 designad for low power amplifier applications. Ronkonkoma, N.Y. 11778 MAXIMUM RATINGS Symbol Valu« Collector-Emitter Voltage	OCR Scan	2N930.	PDF
Untitled Abstract: No abstract text available Text: i_L N AMER P H I L I P S / D I S CR E T E bbSBTBl 0015251 1 □ bE D T RZ2833B45W PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in a common-base class-C broadband pulse power amplifier with a frequency range of 2,8 to 3,3 GHz.	OCR Scan	RZ2833B45W 100/us; bbS3131 D01535S P-33-13	PDF
M0607 Abstract: No abstract text available Text: _ - . :- . ~~_ . ~~ - N AMER PHIL IPS /D IS CR ET E _ Gt.E D ' • ii ~ ■ ■ ■■ t.bS3T31 D01SD4S Ì ■ 11 ■ M06075B400Z M AINTENANCE TYPE r - a s - i g - PULSED MICROWAVE POWER TRANSISTOR	OCR Scan	Q015045 M06075B400Z M0607	PDF
Untitled Abstract: No abstract text available Text: N AMER PHI L I P S / D I S CR E T E bbSBTBl 0015531 h □ hE D RZ2731B45W r-s s - 3 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 2,7 to 3,1 GHz.	OCR Scan	RZ2731B45W 001SH3S 7Z24137	PDF
2n5088 transistor Abstract: 2N5088 2N6428A Text: SAMSUNG S EM I CON DU C T CR INC 2N6428A J*4E D \| 7^4142 □ 0 D 7 1 £i 3 fc, \| NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V c e o = 5 0 V • Collector D issipation: P c m ax =625m W ABSO LUTE MAXIMUM RATINGS (Ta=25°C)	OCR Scan	1b4l42 G0071T3 2N6428A 625mW 2N5088 T-29-21 100/iA, 100mA, 100MHz 2n5088 transistor	PDF

2sc4881 Abstract: No abstract text available Text: TOSHIBA 2SC4881 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4881 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 10 +0.3 Low Saturation Voltage : VCE s a t = 0.4V (MAX.) TTicrVi S it-ipp H S w itiO iin cr T im p •* D— c> -"üug = , $ 3.2 ± 0.2	OCR Scan	2SC4881 961001EAA2' 2sc4881	PDF
Untitled Abstract: No abstract text available Text: N AMER PHI LIP S/ DIS CR ETE b'lE » bbSa'm DOaiSim T 73 BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in ciass-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.	OCR Scan	BLW99	PDF
2SA1042 Abstract: FUJITSU 2SC2431 2SC2431 2SA1041 2SC243 2SC2432 Text: FUJITSU MI CR OEL ECT RONICS 31E » E3 3 7 4 ^ 2 GOlbSOQ b E3FMI T- 3 3 -Ì3 _ _ January 1990 ^ _ , „ - — PRODUCT PRO FILE - ' FUJITSU 2SA1041, 2SA1042, 2SC2431, 2SC2432 Silicon High Speed Power Transistor DESCRIPTION This series are silicon PNP/NPN planer general purpose, high power switching	OCR Scan	T-33-Z3 2SA1041, 2SA1042, 2SC2431, 2SC2432 2SA1042 FUJITSU 2SC2431 2SC2431 2SA1041 2SC243 2SC2432	PDF
BF747 Abstract: MBB400 DB64 transistor HJ 388 Text: Philips Sem iconductors — bb53^31 00E4bfll l ? 5 N AMER P H IL IPS /D IS CR ET E MAPX b?E Product specification NPN 1 GHz wideband transistor FEATURES £ BF747 PINNING • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.	OCR Scan	bb53-J31 00E4bÃ BF747 BF747 MBB400 DB64 transistor HJ 388	PDF
SOT-103 Abstract: SOT103 BFR591 transistor SOT103 MSB037 Text: • tjbS3T31 DDBlTiE TET M APX Preliminary specification NPN 8 GHz wideband transistor BFR591 N AMER PHIL I P S / D I S CR E T E FEATURES b^E » ■ PINNING • High power gain PIN • Low noise figure • High transition frequency • Gold metallization ensures	OCR Scan	BFR591 BFR591 OT103 MSB037 OT103. is21i2 SOT-103 SOT103 transistor SOT103 MSB037	PDF
PTC2000 Abstract: CCC2000 transistor cr Text: 6 1 15950 M I CR OS EMÌ CORP/POWER 02E 00 52 1 D mT\| biis^so ODOOsai □5 i \| CCC2000 TECHNOLOGY 50 A, 1000 V, NPN Darlington Power Transistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum Collector Al-Ti-Ni-Au	OCR Scan	CCC2000 emitter-25-mil Chipthickness-12 PTC2000 PTC2000 CCC2000 transistor cr	PDF
transistor tt 2222 Abstract: BLW33 BY206 BZY88-C3V3 DDST320 JH transistor BZY88C philips mfr Text: N AMER P H I LI PS / DI S CR ET E b^E » • b b s a 'm □ G a 'm ? J Daa IAPX BLW33 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation	OCR Scan	BLW33 7Z77714 BLW33 transistor tt 2222 BY206 BZY88-C3V3 DDST320 JH transistor BZY88C philips mfr	PDF
4312 020 36640 Abstract: BY206 BLX39 bv-300 carbon resistors Text: N AMER PHILIPS /D IS CR ET E t.b53T31 □ OE'ìSTG 653 I IAPX b'IE » A BLX39 H.F./V.H.F. POWER TRANSISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is	OCR Scan	BLX39 110-j62 7Z77862 4312 020 36640 BY206 BLX39 bv-300 carbon resistors	PDF
BT8032 Abstract: transistor k 790 CMOS LSI two sound generator ENV1 melody generator TST1 15 block diagram of melody generator BT803 Text: MELODY GENERATOR WITH ACCOMPANEMENT BT8032 FEATURES • Two Sound Sources with Envelope CR Envelope • 3.0V to 5.0V Operating Voltage • DC or AC Triggered Performance Start Mode (Mask Selected) • Can Drive an 8 Ohm Dynamic Loudspeaker if Provided Externally with a Transistor	Original	BT8032 16-pin BT8032 transistor k 790 CMOS LSI two sound generator ENV1 melody generator TST1 15 block diagram of melody generator BT803	PDF
tln103 Abstract: TPS603 VOC sensor photo 2870 Text: TOSHIBA {D IS CR ETE/OPTO} 9097250 TOSHIBA NPN 99D < D I SCRETE/OPTO> TPS603 S IL IC O N D e \| c1GT7BS0 D0173a0 b 17328 * E P IT A X IA L PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR . OPTICAL SWITCH . POSITION SENSOR . TAPE, CARD READERS . ENCODERS . Spectrally and Mechanically Matched with IR Emitter	OCR Scan	TPS603 TLN103 IK0IDAH01 tln103 TPS603 VOC sensor photo 2870	PDF

TRANSISTOR CR NPN Search Results

TRANSISTOR CR NPN Result Highlights (5)

TRANSISTOR CR NPN Datasheets Context Search

BU2508AF

supersot 6 TE

transistor Y4

transistor r06

supersot 6 TE

xl 1225 transistor

1117 S Transistor

MTPBP10

QE RB 29

Untitled

Untitled

M0607

Untitled

2n5088 transistor

2sc4881

Untitled

2SA1042

BF747

SOT-103

PTC2000

transistor tt 2222

4312 020 36640

BT8032

tln103