CEM4431
Abstract: No abstract text available
Text: CEM4431 P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -30V , -5.8A , RDS ON =40mΩ RDS(ON)=70mΩ @VGS=-10V. @VGS=-4.5V. Super high dense cell design for extremely low RDS(ON). D D D D 8 7 6 5 High power and current handing capability. Surface mount Package.
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CEM4431
CEM4431
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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MRF1535T1/D
MRF1535T1
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FERROXCUBE VK200
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband
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MRF1535T1/D
MRF1535T1
MRF1535T1/D
FERROXCUBE VK200
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EB209
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband
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MRF1550T1/D
MRF1550T1
MRF1550T1/D
EB209
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AN4005
Abstract: A05T AN211A AN215A AN721 MRF1535T1 VK200 capacitor 475
Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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MRF1535T1/D
MRF1535T1
MRF1535T1
AN4005
A05T
AN211A
AN215A
AN721
VK200
capacitor 475
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"RF power MOSFETs"
Abstract: AN4005 AN721 MRF1550T1 VK200 A05T AN211A AN215A
Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband
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MRF1550T1/D
MRF1550T1
MRF1550T1
"RF power MOSFETs"
AN4005
AN721
VK200
A05T
AN211A
AN215A
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L5N1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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MRF1535T1/D
MRF1535T1
L5N1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband
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MRF1550T1/D
MRF1550T1
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zener z8
Abstract: AN4005 A05T AN211A AN215A AN721 MRF1550T1 VK200 MRF1550
Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband
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MRF1550T1/D
MRF1550T1
MRF1550T1
zener z8
AN4005
A05T
AN211A
AN215A
AN721
VK200
MRF1550
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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lg crt monitor circuit diagram
Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJGV0SG00
lg crt monitor circuit diagram
micro servo 9g
samsung lcd tv power supply diagrams
MP 1008 es
uPa2003
8049 microcontroller APPLICATION
LG lcd tv tuner
pioneer car dvd service manual
lg washing machine circuit diagram
8ch pnp DARLINGTON TRANSISTOR ARRAY
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sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
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Corpora1-504-2860
X10679EJEV0SG00
sc5 s dc 6v relay
P48D-70-600
UPD66010
UPD7752
AC03E
uPD7520
uPA1601
UPD70208H
uPD72020
uPD16503
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M 9587
Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
Text: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station
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SG1009/D
MRF377
MW4IC001MR4
MRF9210,
MHVIC915R2,
MWIC930R1,
MWIC930GR1
MHVIC1905R2,
MW4IC2020MBR1,
MW4IC2020GMBR1,
M 9587
FS Oncore
MG4100
LDMOS PA Driver IC, Motorola
FS Oncore GPS
motorola GPS receiver module fs oncore
Motorola transistors MRF646
semiconductors cross index
transistor m 9587
MRF9210
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uPD3599
Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJFV0SG00
uPD3599
transistor nec 2SK2396
MOS FET BUZ 444
MC-7643
nec 3S4M
4305 regulator nec
RD2.4S equivalent
2SC4305 NEC
2sA1441 nec
NPN transistor SST 117
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BFG541
Abstract: X3A-BFR540 BFR540 BFG540
Text: 0035517 P h iM p s jg m ic o n d u c to rg _ _ ^ ^ NPN 9 GHz wideband transistor crystal WM A P Y 7bT Product specification X3A-BFR540 N AUER PHILIPS/DISCRETE b'îE D DESCRIPTION MECHANICAL DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied
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X3A-BFR540
BFR540
BFG540
OT143)
BFG541
OT223)
X3A-BFR540
URV-3-5-52/733
BFG541
BFR540
BFG540
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IEC-134
Abstract: BFR540 transistor d 1264 BFG541 X3A-BFR540 BFG540 IEC134
Text: P h ilip s Sem icon d u ctora P rodu ct sp ecification NPN 9 GHz wideband transistor crystal PHILIPS INTERNATIONAL ^ 3 SbE D DESCRIPTION BCDC>,n A3A-BFR540 m TllDfiEb OOMblD? ITI • PHIN M E C H A N IC A L DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied
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BFR540
BFG540
OT143)
BFG541
OT223)
X3A-BFR540
X3A-BFR540
711002b
15iim
RV-3-5-52/733
IEC-134
BFR540
transistor d 1264
BFG541
BFG540
IEC134
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors ^ ^ 53^ 3 1 0 0 3 5 5 1 7 7 bT U NPN 9 GHz wideband transistor crystal APV Product specification X3A-BFR540 AMER PHILIPS/DISCRETE b^E D DESCRIPTION MECHANICAL DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied
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X3A-BFR540
BFR540
BFG540
OT143)
BFG541
OT223)
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Untitled
Abstract: No abstract text available
Text: l O K V BASEEFA N i Type Vf No. @ lf 2 0 m A V o lt s m a x ertified T I r = 2V jjA m a x OPTO ubular Transistor Diode D e s c r ip t io n C Isolators C o u p led C TR % V b r ceo V b r ( eco ) @ lc = 1 m A @ I e =100| j A @ Vce=10V V o lts m in V o lts m in
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I1264
95C2215U
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8893 single chip tv processor
Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
Text: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7
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MN171608/9
LN66A
MN12510
AN3813/14/15
AN3840N
PNA4601M
MN187*
MN6750*
AN3126/29
AN5179/82N
8893 single chip tv processor
transistor tt 2170 em
AN7156N
an8294nsb
Color TV circuit 8893
AN8782SB
mn150832
mip160
mn662741
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2SC4609
2SC4808
2SA1806
2SC4627
2SA1790
2SC4626
2SC4655
2SD2345
2SC46
12SA1
D1276A
B1419
d638 transistor
b1361
ic 1271a
D1273
D1985A
B947A
B1178
1985A
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transistor d 1264 a
Abstract: transistor A 1264 transistor d 1264
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has
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BUK98150-55
OT223
OT223.
transistor d 1264 a
transistor A 1264
transistor d 1264
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BFG55A
Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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LCD01
BFG55A
philips discrete a440
IC05 philips
a1211 lg
SMD MARKING CODE ALg
BST60
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equivalent transistor c 5888
Abstract: No abstract text available
Text: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency
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bbS3R31
BFS520
OT323
OT323
OT323.
equivalent transistor c 5888
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equivalent transistor c 5888
Abstract: C - 4834 transistor tms 3615 transistor BF 697 Philips FA 291 LMT 4585 2857 M 730 transistor LMT 393 N 43t SOT323 lmt 393
Text: IH bb53T31 DQ2531& 350 ^ l A P X Philips Sem iconductors • Product s p e c ific a tio n N AHER PHILIPS/DISCRETE b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION PIN • Low noise figure DESCRIPTION Code: N2
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BFS520
OT323
MBC67
OT323.
equivalent transistor c 5888
C - 4834 transistor
tms 3615
transistor BF 697
Philips FA 291
LMT 4585
2857 M 730 transistor
LMT 393 N
43t SOT323
lmt 393
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