TRANSISTOR D 304 Search Results

TRANSISTOR D 304 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR D 304 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
ultra low noise NPN transistor Abstract: Transistor Arrays "Transistor Arrays" PNP monolithic Transistor Arrays RF TRANSISTOR 10GHZ low noise UHF pnp transistor HFA3046 ultra low noise transistor harris 3046 HFA3128 Text: so Hm 3046, HFA3096, HFA3127, HFA3128 HARRIS S E M I C O N D U C TJM K Ultra High Frequency Transistor Arrays August 1996 Description • NPN Transistor fT . 8GHz • NPN Current Gain (hFe).	OCR Scan	HFA3096, HFA3127, HFA3128 HFA3046, HFA3127 HFA3128 HFA3046 ultra low noise NPN transistor Transistor Arrays "Transistor Arrays" PNP monolithic Transistor Arrays RF TRANSISTOR 10GHZ low noise UHF pnp transistor ultra low noise transistor harris 3046	PDF
BF495 Abstract: BF495 transistor Text: _ BF495 N AMER PHILIPS/DISCRETE . DbE D ^ =53=131 001H3QS D ' r-2/-/7 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant intended for h.f. applications in radio and television receivers; it is especially recommended for f.m. tuners, i.f. amplifiers in a.m./f.m. receivers where a low transistor	OCR Scan	BF495 001H3QS emi2312 53T31 DD13313 bbS3T31 7Z62763 7Z08226 BF495 BF495 transistor	PDF
Untitled Abstract: No abstract text available Text: bbS3^31 0024535 304 « A P X N ANER PHILIPS/DISCRETE BCV26 BCV46 b?E D SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar darlington transistor in a plastic S O T 2 3 envelope. N-P-N complement is BCV27/47. Q U IC K R E F E R E N C E D A T A BCV26 BCV46	OCR Scan	BCV26 BCV46 BCV27/47.	PDF
CA3046 RCA Abstract: ICAN-5296 CA304B CA3046 CA3045 RCA-CA3018 rca CA3046 LLAM CA3045F 92CS-I52I6 Text: D E \| 3fl7SDÛl 0014b0G 5 G E SOLID STATE 01 3875081 G Arrays _ SOLID S T AT E 0 1E 1 4 600 D CA3045, CA3046 General-Purpose N-P-N Transistor Arrays Three Isolated Transistors and One DifferentiallyConnected Transistor Pair For Low-Power Applications at Frequencies	OCR Scan	CA3045, CA3046 CA3045 CA3046 92CS-K256H1 92CS-ISI96 CA3046 RCA ICAN-5296 CA304B RCA-CA3018 rca CA3046 LLAM CA3045F 92CS-I52I6	PDF
CA3046E Abstract: si3206 et 3045 Text: d e \| 3fl?50fli o a m t o o 2 01E 14600 D G E SOLID STATE 01 3875081 G E SOLID STATE Arrays _ CA3045, CA3046 General-Purpose N-P-N Transistor Arrays T h re e Isolated Transistors and O ne D ifferen tiallyC o n nected Transistor Pair For L ow -P o w er A pplications at Frequencies	OCR Scan	50fli CA3045, CA3046 256RI CA3046E si3206 et 3045	PDF
MRF342 Abstract: transistor D 2581 RF340 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF342 The RF Line 24 W 1 0 0 -1 5 0 MHz R F POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . d e s ig n e d p rim a rily fo r use in V H F a m p lifie rs w ith a m p litu d e m o d u la tio n and	OCR Scan	MRF342 RF340 RF344 MRF342 transistor D 2581	PDF
MP4304 Abstract: No abstract text available Text: TOSHIBA MP4304 TO SH IBA PO W E R TRANSISTOR M O D ULE SILICON NPN EPITA XIAL TYPE HIGH GAIN PO W E R TRANSISTOR 4 IN 1 M P 4 304 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.	OCR Scan	MP4304 MP4304	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
TRANSISTOR GB 558 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •	OCR Scan	2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558	PDF
TT 2222 Abstract: No abstract text available Text: N AMER PHIL IPS/D ISCR ETE btiS3T31 DDSTOMS STb I IAPX B LV 45/12 b'lE D V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optimum temperature profile	OCR Scan	btiS3T31 OT-119) BLV45/12 TT 2222	PDF
BUK453-100A Abstract: T0220AB Text: PHILIPS INTERNATIONAL L.5E D • 711Dfl2t QDb4041 MTO * P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	711Dfl2t QDb4041 BUK453-1OOA/B T0220AB BUK453 -100A -100B BUK453-100A	PDF
BUZ34 Abstract: 6j11 V103 Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ34_ ObE D • bb53T31 ODlMblS E ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ34 bb53T31 bb53131 T-39-1 BUZ34 6j11 V103	PDF

Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b 'lE ]> bb53^31 □ D 2 f i ci m IAPX TTD BLV21 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran	OCR Scan	BLV21	PDF
TRANSISTOR BF495 Abstract: BF495 transistor BF495 BF495C N10Y BF495D transistor TI 310 Text: _ N AMER PHILIPS/DISCRETE " ~ . DbE D • BF495 htSBTBl 001H30Û G ■ T - 2 1 - I* ? ' SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant intended for h.f. applications in radio and television r a n r a n ; it is especially recommended for f.m . tuners, i.f. amplifiers in a.m./f.m. receivers where a low transistor	OCR Scan	BF495 DD15313 7Z07390 31-iy D01S31S 7Z62763 7Z08226 TRANSISTOR BF495 BF495 transistor BF495 BF495C N10Y BF495D transistor TI 310	PDF
Untitled Abstract: No abstract text available Text: P h ilip ^ e m ic o n d u c to i^ ^ • tatiS3 T 31 DDBltaflfi 75b M APX Pro d u c^p e cifica tio n NPN 1 GHz video transistor ^ BFQ162 N AUER PHILIPS/DISCRETE b'lE » PINNING DESCRIPTION NPN silicon epitaxial transistor in a SOT32 TO-126 package, with emitter-ballasting resistors and a	OCR Scan	BFQ162 O-126) MBB896 UBB43S	PDF
phonograph preamplifiers Abstract: differential pair cascode darlington fua 3046 dc uA3045 MA3026 MONOLITHIC DIODE ARRAYS fairchild uA3046 darlington pair transistor cd 3054 LA3026 Text: \|jA3018 •MA3018A. [i A3019 •mA3026 •mA3036 MA3039 • JA3045 •mA3046 •mA3054 •mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D L IN E A R IN T E G R A T E D C IR C U IT S G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode A rrays consist o f general purpose integrated circuit devices constructed	OCR Scan	jA3018 MA3018A. A3019 MA3026 MA3036 MA3039 JA3045 mA3046 MA3054 MA3086 phonograph preamplifiers differential pair cascode darlington fua 3046 dc uA3045 MA3026 MONOLITHIC DIODE ARRAYS fairchild uA3046 darlington pair transistor cd 3054 LA3026	PDF
2N599 JAN Abstract: 2N599 N468 MIL-S-19491 Y2 TRANSISTOR CONFORMANCE pnp germanium transistor Text: M IL-S-19500/186C NAVY 22 June 1964 SUPERSEDING MIL-S-l9500/166B(NAvy) 20 September 1962 (See 6.2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, TYPE 2N599 1. SCOPE 1.1 D escription.- This Specification covers the detailed requirem ents for a PNP germanium transistor	OCR Scan	MIL-S-19500/166C 19500/166B 2N599 MIL-S-19500, 2N599. M3L-S-19500/166C SH70ST 2N599 JAN 2N599 N468 MIL-S-19491 Y2 TRANSISTOR CONFORMANCE pnp germanium transistor	PDF
transistor vergleichsliste Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N	OCR Scan		PDF
bfr95 philips Abstract: bfr95 Text: Product specification Philips Sem iconductors 7- 3 3 ' O S NPN 3.5 GHz wideband transistor DESCRIPTION 711002b D0M5773 H76 M P H I N SbE D PHILIPS INTERNATIONAL BFR95 PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: PowerMOS transistor N AMER PHILIPS/DISCRETE _ BUZ34_ ObE D • ^ 5 3 ^ 3 1 QOlHblE 2 ■ r-s^-n July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ34_ BIIZ34_ bb53131 T-39-11 QD14tjlfi T-39-11-	PDF
MRF517 Abstract: 2761 l transistor 336 motorola OB2200 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF517 The R F Line HIG H FREQUENCY NPN SILICON HIGH FREQ UENCY TRANSISTOR TRANSISTOR NPN SILICON . . . designed s p e c ific a lly fo r b roadb and a p p lic a tio n s re q u irin g lo w d is to r tio n characteristics. S p e cifie d fo r use in C A T V d is tr ib u tio n	OCR Scan	MRF517 MRF517 2761 l transistor 336 motorola OB2200	PDF
BFR95 Abstract: 1 Fp 33 transistor bfr95 philips QDHS773 D2 144 transistor Text: Product specification Philips Semiconductors r^ 3 3 -o s NPN 3.5 GHz wideband transistor DESCRIPTION 711062b QDHS773 H76 M P H I N SbE D PHILIPS INTERNATIONAL BFR95 PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.	OCR Scan	BFR95 711002b QDHS773 MBB199 BFR95 1 Fp 33 transistor bfr95 philips D2 144 transistor	PDF

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TRANSISTOR D 304 Search Results

TRANSISTOR D 304 Result Highlights (5)

TRANSISTOR D 304 Datasheets Context Search

tip122 tip127 audio amp schematic

ultra low noise NPN transistor

BF495

Untitled

CA3046 RCA

CA3046E

MRF342

MP4304

2N2222A 338

y51 h 120c

TRANSISTOR GB 558

TT 2222

BUK453-100A

BUZ34

Untitled

TRANSISTOR BF495

Untitled

phonograph preamplifiers

2N599 JAN

transistor vergleichsliste

bfr95 philips

Untitled

MRF517

BFR95