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    TRANSISTOR D 467 Search Results

    TRANSISTOR D 467 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 467 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    12v DC motor

    Abstract: remote speed control of ac motor 100K preset potentiometer DIODE in4005 IN4005 diode remote speed control of dc motor relay 12v dc 100rpm DC motor potentiometer 4k7 1K preset potentiometer
    Text: RS 320-584 PB0224 Issue 4 OEM Speed control board 102 and 313 speed control board Installation and operating instructions 1 Contents Declarations 1.0 Description 2.0 Specification 3.0 Identification 4.0 313FD/D 12V DC motor - externally mounted transistor


    Original     		PDF PB0224 313FD/D IN4005 P600D TIP141 TIPP116 100VA 12v DC motor remote speed control of ac motor 100K preset potentiometer DIODE in4005 IN4005 diode remote speed control of dc motor relay 12v dc 100rpm DC motor potentiometer 4k7 1K preset potentiometer

    AN569

    Abstract: MTY14N100E 340G
    Text: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY14N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 1000 VOLTS


    Original     		PDF MTY14N100E/D MTY14N100E MTY14N100E/D* AN569 MTY14N100E 340G

    arco mica trimmer 30

    Abstract: VRF2933 SD2933
    Text: VRF2933 VRF2933MP 50V, 300W, 150MHz RF POWER VERTICAL MOSFET D The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF2933 VRF2933MP 150MHz 30MHz, SD2933 arco mica trimmer 30 SD2933

    sn75465

    Abstract: 75468
    Text: SN75465 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS D 2 6 2 S , DECEMBER 1 9 7 6 -R E V IS E D SEPTEMBER 1 9 8 6 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR A RRA YS 500-mA Rated Collector Current Single Output D OR N P A C K A G E (TO P VIEW ) High-Voltage Outputs . . . 100 V


    OCR Scan     		PDF SN75465 SN75469 500-mA ULN2005A, ULN2001A, ULN2002A, ULN2003A, ULN2004A, SN75466, SN75468 75468

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    2N4403

    Abstract: 2N4402 transistor 2n4403 transistor 3050 JL003 4403 transistor
    Text: 2N4402/4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: Veto =40V • C o llector D issipation: Pc <max =625mW ABSOLUTE MAXIMUM RATINGS Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2N4402/4403 -625mW 2N4403 00/iA, Jl-003 2N4402 transistor 2n4403 transistor 3050 JL003 4403 transistor

    BUK637-600A

    Abstract: BUK637-600B BUK637-600C BUK637
    Text: N AMER P H I L I P S / D I S C R E T E SSE D • ^ 5 3 = 1 3 1 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK637-600A BUK637-600B BUK637-600C BUK637 -600A -600B -600C 1E-01 1E-03 1E-04

    7B468

    Abstract: 7B465 76465 75469 sn75466 sn75465
    Text: SN75465 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS D 2 6 2 5 , DECEMBER 1 9 7 6 -REVISED SEPTEMBER 1 9 8 6 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRA YS 500-mA Rated Collector Current Single Output D OR N P A C K A G E (TO P V IEW ! • High-Voltage Outputs . . . 100 V


    OCR Scan     		PDF SN75465 SN75469 500-mA ULN2005A, ULN2001 ULN2002A, ULN2003A, ULN2004A, SN7S465 7B468 7B465 76465 75469 sn75466

    k 246 transistor fet

    Abstract: 4428A BUK637-600A BUK637-600B BUK637-600C SE120 SE-120
    Text: N AMER PHILIPS/DISCRETE SSE D • ^53=131 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF BUK637-600A BUK637-600B BUK637-600C BUK637 -600A -600B -600C k 246 transistor fet 4428A BUK637-600A BUK637-600B BUK637-600C SE120 SE-120

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 Q020bfl5 4 ■ PowerMOS transistor Fast Recovery Diode FET BUK637-600A BUK637-600B BUK637-600C T ' - 3 cM £ ' _ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF Q020bfl5 BUK637-600A BUK637-600B BUK637-600C BUK637 reve637-600C T-39-15 IB-01 IE-02 IE-03

    K545

    Abstract: BUK545 BUK545-200A BUK545-200B
    Text: PHILIPS INTERNATIONAL b5E D B TllOflEb ODbMEOb Ibfl B P H I N Product Specification Philips Semiconductors BU K545-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


    OCR Scan     		PDF 7110flEb K545-200A/B -SOT186 BUK545 -200A K545 BUK545-200A BUK545-200B

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE PowerM OS transistor ObE D • bbBBTBl 0014760 1 B U Z 33T T - 3<M3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF T0218AA BUZ331 T-39-13 bb53c bb53T31 00147fib

    BF419

    Abstract: No abstract text available
    Text: BF419 _ HIGH-VOLTAGE TRANSISTOR S ilico n n-p-n transistor in TO 126 plastic package in tended fo r use as a d river fo r line o u tp u t transistors in c o lo u r tv receivers. Q U IC K R E F E R E N C E D A T A Collector-base voltage open e m itte r


    OCR Scan     		PDF BF419 BF419

    Untitled

    Abstract: No abstract text available
    Text: m H EW LETT* PA CK A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high perform ance NPN bipolar transis­


    OCR Scan     		PDF AT-32063 OT-363 SC-70) AT-32063 OT-363

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from


    OCR Scan     		PDF 2SC5010

    2SC 968 NPN Transistor

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from


    OCR Scan     		PDF 2SC5007 2SC 968 NPN Transistor

    CT 1975 sam

    Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the


    OCR Scan     		PDF 2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking

    transistor NEC D 822 P

    Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
    Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA


    OCR Scan     		PDF 2SC5336 2SC3357 transistor NEC D 822 P transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic

    HC 148 TRANSISTOR

    Abstract: AN569 MTY14N100E
    Text: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TY14N 100E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high


    OCR Scan     		PDF MTY14N100E/D Speci100E 340G-02 O-264 HC 148 TRANSISTOR AN569 MTY14N100E

    Untitled

    Abstract: No abstract text available
    Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's D ata S heet M TY14N100E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high


    OCR Scan     		PDF MTY14N100E

    d732

    Abstract: B696 2SD732 D732K 2SB696K D-732 B696K 2SB696 2SD732K D696K
    Text: Epitaxial Mesa Type Silicon Transistor For AF Power Amplifier- Use ★ [N E W ]/Te n ta tive Specification ★For output stage of 60 watts power amplifier ★ Enough ability of voltage, current and antidestruc­ tion. 467A . — D U ? ÿ 9 • I î i ÿ l;J±


    OCR Scan     		PDF 2SD732, 2SB696 2SB696, 2SD732 2SB696K, 2SD732K B696K D732K D696K d732 B696 D732K 2SB696K D-732 2SD732K

    CEB6031L

    Abstract: No abstract text available
    Text: CEP6031L/CEB6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 30V, 60A, R d s o n =1 O m Q @ Vgs=1 0V. R d s (on )=1 5m Q @ Vgs=4.5V. • Super high dense cell design for extremely low R • High power and current handling capability.


    OCR Scan     		PDF 10iti 15itiQ O-220 O-263 to-263 to-220 CEP6031L/CEB6031L CEB6031L

    75n06

    Abstract: GC230 GC35 TT218 STH75N06FI
    Text: STH75N06 STH75N06FI SGS-THOMSON ]D ^©|[LlCTi©^ iJ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH75N06 STH75N06FI . . . . . . . . V dss R D S o n 60 V 60 V 0.014 i l 0.014 Sì 75 A 48 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANC HE TESTED


    OCR Scan     		PDF STH75N06 STH75N06FI TH75N06 STH75N06FI O-218 ATT218 SCHEM250 STH75N06/FI 75n06 GC230 GC35 TT218