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    TRANSISTOR D 822 P Search Results

    TRANSISTOR D 822 P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 822 P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    telefunken IC 121

    Abstract: No abstract text available
    Text: S 822 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low noise figure


    Original     		PDF D-74025 telefunken IC 121

    Hitachi DSA002732

    Abstract: No abstract text available
    Text: Hitachi Single-Chip Microcomputer H8/3052 F-ZTATTM HD64F3052TE, HD64F3052F, HD64F3052BTE, HD64F3052BF, HD64F3052BVTE, HD64F3052BVF Hardware Manual ADE-602-180A Rev. 2.0 3/23/2001 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s


    Original     		PDF H8/3052 HD64F3052TE, HD64F3052F, HD64F3052BTE, HD64F3052BF, HD64F3052BVTE, HD64F3052BVF ADE-602-180A H8/3052F-ZTAT H8/3048F-ZTAT. Hitachi DSA002732

    Hitachi DSA002734

    Abstract: No abstract text available
    Text: Hitachi Single-Chip Microcomputer H8/3052 F-ZTATTM HD64F3052TE, HD64F3052F, HD64F3052BTE, HD64F3052BF, HD64F3052BVTE, HD64F3052BVF Hardware Manual ADE-602-180A Rev. 2.0 3/23/2001 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s


    Original     		PDF H8/3052 HD64F3052TE, HD64F3052F, HD64F3052BTE, HD64F3052BF, HD64F3052BVTE, HD64F3052BVF ADE-602-180A H8/3052F-ZTAT H8/3048F-ZTAT. Hitachi DSA002734

    a13 sot23-5

    Abstract: sine wave generator using LM358 EME-7351 A14* marking sot23-5 SOT23 M7 simple LM324 COMPARATOR CIRCUIT a13 marking sot23 Analog devices marking Information PACKAGE SOIC eme marking sot23 LMV321M5
    Text: t s e all r o t a r a p m o C & SPRING p m Sm SI SC7 NGLE 0-5/ SOT +IN 1 23-5 Op A in D l r o W e h t s ’ e s On thi for V- 2 LMV821 LMV358 LMV393 LMV822 LMV324 LMV339 LMV824 A UT O • Rail-to-Rail Output 50% Smaller than SOT-23 Supply Operation build an we


    Original     		PDF LMV821 LMV358 LMV393 LMV822 LMV324 LMV339 OT-23 a13 sot23-5 sine wave generator using LM358 EME-7351 A14* marking sot23-5 SOT23 M7 simple LM324 COMPARATOR CIRCUIT a13 marking sot23 Analog devices marking Information PACKAGE SOIC eme marking sot23 LMV321M5

    HD64F3052F

    Abstract: 868 printed antenna design HD64F3052BF HD64F3052BTE HD64F3052BVF HD64F3052BVTE HD64F3052TE TAA 691
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003.


    Original     		PDF H8/3052F-ZTAT H8/3048F-ZTAT. H8/3052 HD64F3052F 868 printed antenna design HD64F3052BF HD64F3052BTE HD64F3052BVF HD64F3052BVTE HD64F3052TE TAA 691

    sot234 jt

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductor PHILIPS 7110fl2b 006^077 TOT 1995 May 01


    OCR Scan     		PDF PCA84C122; 7110fl2b 711DflSb sot234 jt

    transistor Siemens 14 S S 92

    Abstract: 2sc 3150 transistor BRY 56 C Bry 56 BRY 66 A BRY 56 B
    Text: ESC D • fl23StiQS 0004773 1 MS I E G , Programmable Unijunction Transistor BRY 56 7” ^ o f SIEMENS AKTIENGESELLSCHAF Programmable silicon planar unijunction transistor in TO 92 plastic package 10 A 3 DIN 41868 . K8max Type Ordering code BRY561» BRY 56 A


    OCR Scan     		PDF fl23StiQS BRY561» Q68000-A803 Q68000-A803-S1 Q68000-A803-S2 Q68000-A803-S3 23SbGS 02BStaQS GG04777 BRY56 transistor Siemens 14 S S 92 2sc 3150 transistor BRY 56 C Bry 56 BRY 66 A BRY 56 B

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA IRF630 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed fo r low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid


    OCR Scan     		PDF IRF630 21A-06 O-220AB) b3b7254

    MJE2370

    Abstract: 2sc 1473
    Text: MJE2370 silicon 3.0 AMPERE POWER TRANSISTOR PNP SILICON MEDIUM-POWER TRANSISTOR PNP SILICON . . . designed for use in general-purpose amplifiers as drivers and as switches. • Low Collector-Emitter Saturation Voltage V cE(sat) = 0-7 Vdc (Max) @ l c “ 1.0 Ade


    OCR Scan     		PDF MJE2370 MJE2S20 MJE2370 2sc 1473

    Untitled

    Abstract: No abstract text available
    Text: 32E D • ISIP Ô23b320 001724b S S M B T 4126 PNP Silicon Sw itching Transistor SIEMENS/ SPCL-, SEMICONDS _ T - 3 7 - I5 " High current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Type M arking Ordering code for ve rsio ns in bulk Ordering code for


    OCR Scan     		PDF 23b320 001724b S3b32Q

    2SK822

    Abstract: TD-4002 TD400
    Text: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK822 DESCRIPTION The 2SK822 is N-channel MOS Field E ffect Power Transistor designed fo r sw itching power supplies, DC-DC PACKAGE D IM EN SIO N S in m illim e te rs (inches)


    OCR Scan     		PDF 2SK822 2SK822 1987M TD-4002 TD400

    ON Semiconductor marking 821

    Abstract: No abstract text available
    Text: SIEMENS BCR 583 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10ki2,R2=10kS2 Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings


    OCR Scan     		PDF 10ki2 10kS2) Q62702-C2385 OT-23 III11 ON Semiconductor marking 821

    BUX45

    Abstract: transistor et 460
    Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection


    OCR Scan     		PDF CB-19 BUX45 transistor et 460

    MG160S1UK1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG160S1UK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Collector • With Built-in • High DC is Isolated from Case Free Whee l i n g Diode C u r r e n t G a in: hpg=100 Min. (IC =1 6 0 A )


    OCR Scan     		PDF MG160S1UK1 MG160S1UK1

    BLX13

    Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
    Text: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested


    OCR Scan     		PDF 711005t. BLX13 r-33-// BLX13 BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971

    Untitled

    Abstract: No abstract text available
    Text: TLP822JLP826 TLP827 INFRARED LED + PHOTO TRANSISTOR T IP 822 VCR, COMPACT DISK PLAYER FLOPPY DISK DRIVE, FACSIMILE, PRINTER VENDING MACHINE, TICKETING MACHINE FOR VARIOUS POSITION DETECTION The TLP822, TLP826, and TLP827 are photo interrupters with a high radiant power infrared LED and


    OCR Scan     		PDF TLP822JLP826 TLP827 TLP822, TLP826, TLP827 TLP822 TLP826

    stetron

    Abstract: No abstract text available
    Text: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode


    OCR Scan     		PDF VT60D\SICVAR SDL-080-131 SDL-098-231 100mA: stetron

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ^1=53^31 DD3T433 E7D BLW83 fc.RE D IAPX l H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear


    OCR Scan     		PDF DD3T433 BLW83

    transistor NEC D 822 P

    Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters


    OCR Scan     		PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1822 2 S A 1 822 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATION Î.2 ± 0.2 1 0 1 0.3 • Excellent Switching Times ton = 1.0//s Max. , tf=1.0,«s (Max.) at I e = - 0 .3 A


    OCR Scan     		PDF 2SA1822

    D 823 transistor

    Abstract: transistor PH ON 823 m
    Text: Philips Semiconductors • bbSBTBl QDHimD bbfi H A P X Product specification N AUER PHILIPS/D ISCR ETE b?E D NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage


    OCR Scan     		PDF OT223 BFG31. BFG97 D 823 transistor transistor PH ON 823 m

    43120203664

    Abstract: BLW83 PHILIPS 4312 amplifier 431202036640 choke BY206 philips carbon film resistor
    Text: bSE V m 7110&Eb □□b332*ì 75^ BiPHIN BLW83 _PHILIPS INTERNATIONAL_ ^ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear


    OCR Scan     		PDF BLW83 711002b 00b3337 BLW83 43120203664 PHILIPS 4312 amplifier 431202036640 choke BY206 philips carbon film resistor

    BFG96

    Abstract: TRANSISTOR P3 1351 NPN TRANSISTOR BFG32 V 904 RL 805 transistor SOT103 bfg96 scattering 803 0863 FP 801 h a 431 transistor
    Text: -7- ^ P h ilip s S em icon du ctors ^ /-rZ -g Product sp ecification BFG96 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL D E S C R IP T IO N N P N transistor in a 4-lead dual-em itter plastic S O T 1 0 3 envelope. It is designed for application in w ideband am plifiers, such a s M A T V


    OCR Scan     		PDF BFG96 711005b OT103 BFG32. MSB037 OT103. BFG96 TRANSISTOR P3 1351 NPN TRANSISTOR BFG32 V 904 RL 805 transistor SOT103 bfg96 scattering 803 0863 FP 801 h a 431 transistor

    712 transistor smd sot23

    Abstract: 33m ph diode smd transistor 718 diode PH 33m
    Text: Value Code Inductor ph Code .01 .012 .015 .018 000 Oil 001 009 ph Code pFID. .10 .12 .15 .18 010 012 015 018 _ _ . _ .022 002 .22 022 _ _ - _ .027 007 .27 027 - _ .033 003 .33 033 _ - - - .039 009 .39 039 . _ _ - _ .047 004 .47 047 _ _ - _ .056 005 .56 056


    OCR Scan     		PDF SX3512 SX5020 712 transistor smd sot23 33m ph diode smd transistor 718 diode PH 33m