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    TRANSISTOR D2387 Search Results

    TRANSISTOR D2387 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    transistor D2387

    Abstract: D2387 2SD2387 2sd2387 data sheet transistor D2387 data sheet 2SB1558
    Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD2387 2SB1558 2-16C1A transistor D2387 D2387 2SD2387 2sd2387 data sheet transistor D2387 data sheet 2SB1558

    D2387

    Abstract: transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387
    Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD2387 2SB1558 2-16C1A D2387 transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387

    D2387

    Abstract: 2SB1558 2SD2387 transistor D2387
    Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		PDF 2SD2387 2SB1558 2-16C1A D2387 2SB1558 2SD2387 transistor D2387

    Untitled

    Abstract: No abstract text available
    Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD2387 2SB1558 2-16C1A