IC 3130
Abstract: 4110 P525 Q62702-P5250 GEOY6976
Text: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik
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2SK3585
Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)
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PUB4753
PU7457)
PUB4701
PUB4702
450/600o
380/680o
SIP10-A1
2SK0301
2SK663)
2SK301)
2SK3585
Infrared-Sensor
2SK3578
2SK3584
2SK3583
PUB4701
2SK1104
2SK1860
2SK3585 equivalent
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M61511FP
Abstract: 80P6N 2427D N675 D44 8PIN
Text: MITSUBISHI SOUND PROCESSORS M61511FP AUDIO SIGNAL PROCESSOR 6ch Electric Volume with 10 Input Selector APPLICATION AV Amp, Receiver, Mini Compo etc. FEATURE • 6ch Independent Electric Volume with High Voltage Transistor 97 Step ; 0~-95dB/1dB Step, -∞ , Maximum Input Voltage 4Vrms
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M61511FP
-95dB/1dB
0/6/12dB)
80P6N
M61511FP
80P6N
2427D
N675
D44 8PIN
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d933
Abstract: D932 BUK9MNN-65PKK MS-013 SO20 transistor D929
Text: BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MNN-65PKK
d933
D932
BUK9MNN-65PKK
MS-013
SO20
transistor D929
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Untitled
Abstract: No abstract text available
Text: BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 01 — 27 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MNN-65PKK
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Untitled
Abstract: No abstract text available
Text: BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MNN-65PKK
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opto fet
Abstract: ll90_3 JESD46-B LL85 LL90 transistor FET OS-PCN-2005-003-A
Text: Product / Process Change Notification For internal use only 2005-02-15 OS-PCN-2005-003-A Dear Customer, please find attached our OSRAM OS PCN: “Change of bond pad of field effect transistor FET and leadframe plating for laser SPL LLxx” Important information for your attention:
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OS-PCN-2005-003-A
JESD46-B"
D-93049
opto fet
ll90_3
JESD46-B
LL85
LL90
transistor FET
OS-PCN-2005-003-A
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d5cd
Abstract: IPI024N06N3 G
Text: IPB021N06N3 G Ie\Q IPI024N06N3 G IPP024N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 .( J *& Y" )*( 6
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IPB021N06N3
IPI024N06N3
IPP024N06N3
d5cd
IPI024N06N3 G
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IPB029N06N3G
Abstract: No abstract text available
Text: IPB029N06N3 G Ie\Q IPI032N06N3 G IPP032N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H , & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 .( J *&1 Y" *(
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IPB029N06N3
IPI032N06N3
IPP032N06N3
IPB029N06N3G
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55B5
Abstract: IPB036N12N marking eb5 Diode 9H diode 1D marking G9
Text: IPB036N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +&. Y" I9 )0( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 + 9H"[Z#
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IPB036N12N3
65AE5
55B5
IPB036N12N
marking eb5
Diode 9H
diode 1D
marking G9
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marking EB diode
Abstract: Q451 ee 19 8b qg
Text: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R , ? >=1H, & Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & I9 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# 0( J -&,
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IPP057N08N3
IPI057N08N3
IPB054N08N3
marking EB diode
Q451
ee 19 8b qg
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IPD320N20N3
Abstract: marking EB5
Text: IPD320N20N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +* Y" I9 +, 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
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IPD320N20N3
7865AE5
marking EB5
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IPB025
Abstract: IPB025N08N3 G
Text: IPB025N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H 0 J Q ' 3 81>>5< >? B=1<<5F5< R 9H"[Z#$YMd *&- Y" Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & I9 *( 6 @B5F9? EC 5>79>55B9 >7 C1=@<5 3 ? 45 ?E7(*8C(0C Q. 5BI <? G ? > B5C9CD
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IPB025N08N3
IPB025
IPB025N08N3 G
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IPD600N25N3 G
Abstract: No abstract text available
Text: IPD600N25N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *-( J R 9H"[Z#$YMd .( Y" I9 *- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
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IPD600N25N3
7865AE5
IPD600N25N3 G
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4b 5c marking
Abstract: No abstract text available
Text: BSC360N15NS3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H -( J R 9H"[Z#$YMd +. Y" I9 + 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
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BSC360N15NS3
4b 5c marking
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Untitled
Abstract: No abstract text available
Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R , ? >=1H- Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & I9 ( J ,&* Y" )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#
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IPB042N10N3
IPI045N10N3
IPP045N10N3
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4b 5c marking
Abstract: PG-TO-263-7
Text: IPB030N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B=? D? B4B9F5 1@@<931D9 ? >C V 9H 0( J R 9H"[Z#$YMd +&( Y" I9 .( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &
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IPB030N08N3
4b 5c marking
PG-TO-263-7
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marking EB5
Abstract: 5CC1
Text: BSC320N20NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +* Y" I9 +. 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9
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BSC320N20NS3
7865AE5
marking EB5
5CC1
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DIODE marking S6 89
Abstract: diode ED 1B DSA0032870 D542 BI55 marking EB diode eb 1b 4240R
Text: IPB023N06N3 G Ie\Q "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC V 9H .( J R 9H"[Z#$YMd *&+ Y" I9 ,( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &
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IPB023N06N3
DIODE marking S6 89
diode ED 1B
DSA0032870
D542
BI55
marking EB diode eb 1b
4240R
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B55Q
Abstract: No abstract text available
Text: IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H -( J R , ? >=1H-( )(&0 Y" 0+ I9 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#
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IPB108N15N3
IPP111N15N3
IPI111N15N3
B55Q
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marking 9D
Abstract: marking eb5 diode 1D marking g9 55B5 7865a DIODE Z6 Diode 9H DIODE ED 99 package marking 5f
Text: IPA086N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R , ? >=1H 0&. Y" I9 ,- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
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IPA086N10N3
7865AE5
marking 9D
marking eb5
diode 1D
marking g9
55B5
7865a
DIODE Z6
Diode 9H
DIODE ED 99
package marking 5f
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marking EB5
Abstract: diode marking eb5 marking G9
Text: IPD122N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R , ? >=1H )*&* Y" -1 I 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
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IPD122N10N3
7865AE5
marking EB5
diode marking eb5
marking G9
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transistor D94
Abstract: transistor D95 KD621K30 ST DARLINGTON TRANSISTOR 10-6327 300 volt 16 ampere transistor
Text: miVEREX KD621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U 3 l D d flIn Q tO H Transistor Module 300 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD621K30
Amperes/1000
transistor D94
transistor D95
KD621K30
ST DARLINGTON TRANSISTOR
10-6327
300 volt 16 ampere transistor
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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