XMFP1-M3
Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
Text: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••
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Rating3-5698410
XMFP1-M3
D 8243 HC
E176
e170315
OF FET E176
FET E119
E176 field effect transistor
E176 fet
mc34063 step down external transistor
28428
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors DTC113ZE/DTC113ZUA DTC113ZKA /DTC113ZCA /DTC113ZSA DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without
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DTC113ZE/DTC113ZUA
DTC113ZKA
/DTC113ZCA
/DTC113ZSA
DTC113ZE
OT-523
DTC113ZUA
DTC113ZKA
10mA/0
100MHz
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DTC113ZE
Abstract: transistor E21 DTA113ZCA DTC113Z DTC113ZCA DTC113ZKA DTC113ZSA DTC113ZUA
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors DTC113ZE/DTC113ZUA /DTC113ZKA /DTC113ZCA /DTC113ZSA DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without
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DTC113ZE/DTC113ZUA
/DTC113ZKA
/DTC113ZCA
/DTC113ZSA
DTC113ZE
OT-523
DTC113ZUA
DTC113ZKA
10mA/0
100MHz
DTC113ZE
transistor E21
DTA113ZCA
DTC113Z
DTC113ZCA
DTC113ZKA
DTC113ZSA
DTC113ZUA
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DTC113ZE
Abstract: DTA113ZCA DTC113Z DTC113ZCA DTC113ZKA DTC113ZSA DTC113ZUA dta113
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors DTC113ZE/DTC113ZUA /DTC113ZKA /DTC113ZCA /DTC113ZSA DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without
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DTC113ZE/DTC113ZUA
/DTC113ZKA
/DTC113ZCA
/DTC113ZSA
DTC113ZE
OT-523
DTC113ZUA
DTC113ZKA
10mA/0
100MHz
DTC113ZE
DTA113ZCA
DTC113Z
DTC113ZCA
DTC113ZKA
DTC113ZSA
DTC113ZUA
dta113
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TRANSISTOR BL 100
Abstract: DTC114YUA
Text: BL Galaxy Electrical Production specification Digital Transistor DTC R1≠R2 SERIES UA FEATURES Pb z Epitaxial planar die construction. z Complementary PNP types available(DTA). z Built-in biasing resistors,R1≠R2 z Also available in lead free version. Lead-free
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OT-323
DTC113ZUA
DTC114WUA
DTC114YUA
DTC123JUA
DTC123YUA
DTC143XUA
DTC143ZUA
TRANSISTOR BL 100
DTC114YUA
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Untitled
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Digital Transistor DTC R1≠R2 SERIES CA FEATURES Pb z Epitaxial planar die construction. z Complementary PNP types available(DTA). z Built-in biasing resistors,R1≠R2 z Also available in lead free version. Lead-free
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OT-23
DTC113ZCA
DTC114WCA
DTC114YCA
DTC123JCA
DTC123YCA
DTC143XCA
DTC143ZCA
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ze 003 ic
Abstract: marking CODE ZUA SOT23 ZUA SOT23 ZCA TRANSISTOR transistor E21 MARKING ZE SOT-23 ze 003 ZCA transistor sot 23 sot-23 MARKING CODE ZCA 8k sot 23 marking
Text: DTC113 ZM/ZE/ZUA/ZCA/ZSA NPN Small Signal Transistor Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with
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DTC113
OT-723
OT-523
OT-323
OT-23
O-92S
ze 003 ic
marking CODE ZUA SOT23
ZUA SOT23
ZCA TRANSISTOR
transistor E21
MARKING ZE SOT-23
ze 003
ZCA transistor sot 23
sot-23 MARKING CODE ZCA
8k sot 23 marking
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chip die npn transistor
Abstract: No abstract text available
Text: WILLAS FM120-M DTC113ZUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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FM120-M
DTC113ZUA
FM1200-M
OD-123+
OD-123H
FM140-MH
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
chip die npn transistor
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ZUA SOT23
Abstract: ZCA TRANSISTOR marking CODE ZUA SOT23 zua marking code sot 23 ZCA transistor sot 23 marking code zua
Text: DTC113 ZM/ZE/ZUA/ZCA/ZSA NPN Small Signal Transistor Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with
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DTC113
OT-723
OT-523
31TYP
O-92S
ZUA SOT23
ZCA TRANSISTOR
marking CODE ZUA SOT23
zua marking code sot 23
ZCA transistor sot 23
marking code zua
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Untitled
Abstract: No abstract text available
Text: IXD2110/IXD2111 Step-Up DC/DC Converter / Controller step-up operation by using only an inductor, a capacitor, and a diode connected externally. The IXD2110/111B, D, and F versions can be used with an external transistor for applications requiring larger currents.
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IXD2110/IXD2111
IXD2110/111B,
IXD2110/111
IXD2111
IXD211x
IXD2110
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transistor marking E39
Abstract: E1491 E407 transistor E391 E308 E138 e696 E302 e798 marking E72
Text: GaAs GaAs FIELD EFFECT TRANSISTOR Small Signal FETs XMFS Series XMFS Series are designed for low noise applications up to C-band to 6GHz . These devices are supplied in the plastic packages. (SOT-143) cFEATURES 1. Low Noise Figure. 2. High Associated Gain.
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OT-143)
transistor marking E39
E1491
E407 transistor
E391
E308
E138
e696
E302
e798
marking E72
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Untitled
Abstract: No abstract text available
Text: IXD2110/IXD2111 Step-Up DC/DC Converter / Controller step-up operation by using only an inductor, a capacitor, and a diode connected externally. The IXD2110/111B, D, and F versions can be used with an external transistor for applications requiring larger currents.
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IXD2110/IXD2111
IXD2110/111B,
IXD2110/111
IXD2111
IXD211x
IXD2110
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transistor E21
Abstract: No abstract text available
Text: DTC113ZE/DTC113ZUA/DTC113ZCA DTC113ZKA/DTC113ZSA Digital Transistor NPN Features 1. 2. 3. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). The bias resistors consist of thin-film resistors with complete isolation to allow
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DTC113ZE/DTC113ZUA/DTC113ZCA
DTC113ZKA/DTC113ZSA
DTC113ZE
DTC113ZUA
OT-523
OT-323
DTC113ZKA
DTC113ZCA
DTA113ZCA
OT-23
transistor E21
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m453
Abstract: ELM452 K1 transistor elm453
Text: 5 PIN SOP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER ELM45X series Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=3750 Vrms • High CMR 15KV/us at VCM=1500V (ELM453) • Guaranteed performance from 0°C to 70°C
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15KV/us
ELM453)
E214129)
ELM45X
ELM452
ELM453
DPC-0000113
m453
K1 transistor
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Untitled
Abstract: No abstract text available
Text: 5 PIN SOP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER ELM45X series Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=3750 Vrms • High CMR 15KV/us at VCM=1500V (ELM453) • Guaranteed performance from 0°C to 70°C
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ELM45X
15KV/us
ELM453)
E214129)
ELM452
ELM453
DPC-0000113
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Untitled
Abstract: No abstract text available
Text: 5 PIN SOP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER ELM45X series Schematic ELM45X series Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=3750 Vrms • High CMR 15KV/us at VCM=1500V (ELM453) • Guaranteed performance from 0°C to 70°C
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ELM45X
15KV/us
ELM453)
E214129)
ELM452
ELM453
DPC-0000113
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Untitled
Abstract: No abstract text available
Text: 8 PIN SOP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER EL045X EL050X series Features • High speed 1Mbit/s •15kV/1s minimum commone mode transient immunity at VCM= 1500V HCPL0453 • High isolation voltage between input and output (Viso=3750 Vrms ) • Guaranteed performance from 0°C to 70°C
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EL045X
EL050X
15kV/1s
HCPL0453)
E214129)
EL0500,
EL0501,
EL0452
EL04VERLIGHT
DPC-0000089
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IGT8D21
Abstract: IGT8E21
Text: csrifBAiMiiisro^ IGT8D21.E21 2CI AMPERES 400, 500 VOLTS EQUIV. FiDS ON = 0.145 i l Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT8D21
60Msec,
IGT8E21
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IGT6D21
Abstract: IGT6E21
Text: IGT6D21.E21 Insulated Gate Bipolar Transistor This IG T " Transistor Insulated Gate Bipolar Transistor is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high
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IGT6D21
-f--10%
IGT6E21
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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MJE1100 MOTOROLA
Abstract: MJE1100 transistor MJE6043 2N6041 MJE1101 MJE1103 transistor MJE1103 mje1102 mje6044 MJE1090
Text: MOTOROLA SC 34 OIODES/OPTO} 6367255 MOTOROLA SC D lf | b3 t,7B5 5 DIO DES/O PTO 34C O O BT'im 37941 r- 3 3 - 0 / SILICON POWER TRANSISTOR DICE (continued) 2C6045 DIE NO. — NPN LINE SOURCE — PL500.E210 •• D 2C6042 DIE NO. — PNP LINE SOURCE — PL500.E209
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PL500
2C6045
2C6042
2N6043
2N6044
2N6045
MJE1100
MJE1101
MJE1102
MJE1100 MOTOROLA
transistor MJE6043
2N6041
MJE1103
transistor MJE1103
mje6044
MJE1090
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2SC2217
Abstract: 2SC2367 NE21935 Ic 9148
Text: NEC" NE21900 NE21903 NE21908 NE21935 NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN FEATURES_ DESCRIPTION • HIGH fT: 8 GHz The NE219 series of NPN silicon bipolar transistors is designedtor small signal amplifiers and oscillator applications up
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NE21900
NE21903
NE21908
NE21935
NE219
NE21900)
S12S21|
NE21900,
E21903,
E21908,
2SC2217
2SC2367
NE21935
Ic 9148
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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2SC3474
Abstract: No abstract text available
Text: TOSHIBA 2SC3474 ? <;r 3 a.7 a. TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • High DC Current Gain : hpE = 500 Min. (Iq = 400 mA) • Low Saturation Voltage : V çje (sat) = 0.5 V (Max.) (10 = 300 mA)
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2SC3474
2SC3474
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