Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NE21903 Search Results

    SF Impression Pixel

    NE21903 Price and Stock

    Comair Rotron GL24S3TDN-E2 19039992A (ALTERNATE: 739-6531)

    24 V dc, DC Axial Fan, 127 x 127 x 38mm, 255m3 / h, 15W | Comair Rotron GL24S3TDN-E2 19039992A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS GL24S3TDN-E2 19039992A (ALTERNATE: 739-6531) Bulk 5 Weeks 1
    • 1 $58.8
    • 10 $58.8
    • 100 $58.8
    • 1000 $58.8
    • 10000 $58.8
    		Get Quote

    NE21903 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE21903 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE21903 NEC 8 GHz, 20 V, NPN silicon high frequency transistor Scan PDF

    NE21903 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NE56755

    Abstract: BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5


    Original     		BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S NE56755 BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s PDF

    BF907

    Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5


    Original     		BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S BF907 BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14 PDF

    2SC2217

    Abstract: 2SC2367 NE21935 Ic 9148
    Text: NEC" NE21900 NE21903 NE21908 NE21935 NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN FEATURES_ DESCRIPTION • HIGH fT: 8 GHz The NE219 series of NPN silicon bipolar transistors is designedtor small signal amplifiers and oscillator applications up


    OCR Scan     		NE21900 NE21903 NE21908 NE21935 NE219 NE21900) S12S21| NE21900, E21903, E21908, 2SC2217 2SC2367 NE21935 Ic 9148 PDF

    NE21936

    Abstract: NE21935 equivalent 2SC2367 NE219 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174
    Text: NE C/ CALI FORNI A 1SE D NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES / • LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ' NE219 SERIES The NE219 series of NPN silicon bipolar transistors is de­ signed for small signal amplifier and oscillator applications up


    OCR Scan     		QG013T3 r-31- NE219 NE21936 NE21935 equivalent 2SC2367 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174 PDF

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


    OCR Scan     		NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318 PDF