Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR EQUIVALENT TYPE Search Results

    TRANSISTOR EQUIVALENT TYPE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR EQUIVALENT TYPE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1955

    Abstract: HN7G01FE SSM3K03FE
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FE 2SA1955 SSM3K03FE HN7G01FE

    2SC5376F

    Abstract: HN7G10FE SSM3K03FE 2sC537
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE HN7G10FE 2sC537

    2SA1955

    Abstract: HN7G01FE SSM3K03FE
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FE 2SA1955 SSM3K03FE HN7G01FE

    Untitled

    Abstract: No abstract text available
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FE 2SA1955 SSM3K03FE

    Untitled

    Abstract: No abstract text available
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE

    Untitled

    Abstract: No abstract text available
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE

    2SA1955

    Abstract: 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET

    HN7G01FU

    Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA

    Untitled

    Abstract: No abstract text available
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830

    HN7G02FE

    Abstract: RN2110 SSM3K03FE
    Text: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent


    Original     		PDF HN7G02FE RN2110 SSM3K03FE HN7G02FE

    Power MOSFET, toshiba

    Abstract: 2SK1830 HN7G05FU RN2301 Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA
    Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent


    Original     		PDF HN7G05FU RN2301 2SK1830 Power MOSFET, toshiba HN7G05FU Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA

    HN7G02FE

    Abstract: RN2110 SSM3K03FE On semiconductor power MOSFET reliability report
    Text: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent


    Original     		PDF HN7G02FE RN2110 SSM3K03FE HN7G02FE On semiconductor power MOSFET reliability report

    HN7G09FE

    Abstract: RN1104F SSM3K15FS
    Text: HN7G09FE TOSHIBA Multichip Discrete Device HN7G09FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN1104F equivalent Q2 (MOSFET): SSM3K15FS equivalent


    Original     		PDF HN7G09FE RN1104F SSM3K15FS HN7G09FE

    Untitled

    Abstract: No abstract text available
    Text: HN7G09FE TOSHIBA Multichip Discrete Device HN7G09FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN1104F equivalent Q2 (MOSFET): SSM3K15FS equivalent


    Original     		PDF HN7G09FE RN1104F SSM3K15FS

    2SK1830

    Abstract: HN7G02FU RN2110
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU

    2SK1830

    Abstract: HN7G02FU RN2110
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU

    HN7G02FU

    Abstract: 2SK1830 RN2110 2SK183
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU 2SK183

    2SA1955

    Abstract: HN7G03FU SSM3K04FU
    Text: HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 transistor : 2SA1955 equivalent Q2 (S-MOS) : SSM3K04FU equivalent Q1 Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G03FU 2SA1955 SSM3K04FU HN7G03FU

    2SA1955

    Abstract: HN7G03FU SSM3K04FU
    Text: HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 transistor : 2SA1955 equivalent Q2 (S-MOS) : SSM3K04FU equivalent Q1 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G03FU 2SA1955 SSM3K04FU HN7G03FU

    Untitled

    Abstract: No abstract text available
    Text: HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 transistor : 2SA1955 equivalent Q2 (S-MOS) : SSM3K04FU equivalent Q1 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G03FU 2SA1955 SSM3K04FU

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD3K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR „ FEATURES 5 6 * Both the DTA114E chip and DTC114E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) „ 1 EQUIVALENT CIRCUIT 3 2 R1


    Original     		PDF DTA114E DTC114E OT-363 OT-363 QW-R218-004 120mW

    DUAL TRANSISTOR

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD12K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR „ FEATURES * Both the DTA144E chip and DTC144E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) „ EQUIVALENT CIRCUIT 6 5 R1 4 R2


    Original     		PDF UD12K DTA144E DTC144E OT-363 UD12KL-AL6-R UD12KG-AL6-R QW-R218-005 DUAL TRANSISTOR

    ud3k

    Abstract: DTC114E DTA114E dual digital transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD UD3K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR „ FEATURES * Both the DTA114E chip and DTC114E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) „ EQUIVALENT CIRCUIT 3 2 R1 1 R2


    Original     		PDF DTA114E DTC114E OT-363 OT-363 QW-R218-004 ud3k dual digital transistor

    DTA144E

    Abstract: DTC144E dual digital transistor UD12K
    Text: UNISONIC TECHNOLOGIES CO., LTD UD12K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR „ FEATURES * Both the DTA144E chip and DTC144E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) „ EQUIVALENT CIRCUIT 6 5 R1 4 R2


    Original     		PDF UD12K DTA144E DTC144E OT-363 UD12KL UD12KG UD12K-AL6-R UD12KL-AL6-R dual digital transistor UD12K