2SA1955
Abstract: HN7G01FE SSM3K03FE
Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)
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HN7G01FE
2SA1955
SSM3K03FE
HN7G01FE
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Untitled
Abstract: No abstract text available
Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)
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HN7G10FE
2SC5376F
SSM3K03FE
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UD3K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR FEATURES 5 6 * Both the DTA114E chip and DTC114E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) 1 EQUIVALENT CIRCUIT 3 2 R1
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DTA114E
DTC114E
OT-363
OT-363
QW-R218-004
120mW
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DUAL TRANSISTOR
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UD12K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR FEATURES * Both the DTA144E chip and DTC144E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) EQUIVALENT CIRCUIT 6 5 R1 4 R2
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UD12K
DTA144E
DTC144E
OT-363
UD12KL-AL6-R
UD12KG-AL6-R
QW-R218-005
DUAL TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UD12K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR FEATURES * Both the DTA144E chip and DTC144E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) EQUIVALENT CIRCUIT 6 5 R1 4 R2
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UD12K
DTA144E
DTC144E
OT-363
UD12KL
UD12K-AL6-R
UD12KL-AL6-R
OT-363
QW-R218-005
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RN4982FS
Abstract: No abstract text available
Text: RN4982FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4982FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4982FS
RN4982FS
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RN4992FS
Abstract: No abstract text available
Text: RN4992FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4992FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4992FS
RN4992FS
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RN4990FS
Abstract: No abstract text available
Text: RN4990FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4990FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4990FS
RN4990FS
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RN4989FS
Abstract: No abstract text available
Text: RN4989FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4989FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4989FS
RN4989FS
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RN4988FS
Abstract: No abstract text available
Text: RN4988FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4988FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4988FS
RN4988FS
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RN4986FS
Abstract: No abstract text available
Text: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4986FS
RN4986FS
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RN4981FS
Abstract: No abstract text available
Text: RN4981FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4981FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4981FS
RN4981FS
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RN1112FS
Abstract: RN1113FS RN2112FS RN2113FS
Text: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.2±0.05 0.15±0.05 Equivalent Circuit and Bias Resistor Values
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RN2112FS
RN2113FS
RN2112FS,
RN1112FS,
RN1113FS
RN1112FS
RN1113FS
RN2113FS
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2SB1122
Abstract: 2SD1622 FP203 2SB1122 equivalent
Text: Ordering number:EN4496 FP203 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuits Features Package Dimensions • Composite type with 2 transistors of PNP transistor and NPN transistor,facilitating high-density mounting. · The FP203 is formed with chips, being equivalent to
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EN4496
FP203
FP203
2SB1122
2SD1622,
FP203]
2SD1622
2SB1122 equivalent
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BA1A4M equivalent
Abstract: BA1A4M BAIA4M IC10l
Text: NPN SILICON TRANSISTOR BAI A4M DESCRIPTION The BA1A4M is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. in millimeters inches FEATURE • 4.2 MAX. (0.165 MAX.) Bias resistors built in type NPN transistor equivalent circuit. 2.2 MAX.
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10kfi
10-lR
BA1A4M equivalent
BA1A4M
BAIA4M
IC10l
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PA33
Abstract: transistor KIA-70
Text: NEC PNP SILICON TRANSISTOR AN1A4M DESCRIPTION The AN1A4M is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE • in m illim eters inches 52 MAX. (0.204 MAX.) . Bias resistors built-in type PNP transistor equivalent circuit.
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BA1F4M
Abstract: No abstract text available
Text: NEC DESCRIPTION NPN SILICON TRANSISTOR B A 1F 4M The BA1F4M is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 4.2 MAX. (0.165 MAX.) • Bias resistors built-in type NPN transistor equivalent circuit.
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100mA
BA1F4M
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Untitled
Abstract: No abstract text available
Text: PNP SILICON TRANSISTOR BN1L4M DESCRIPTION The BN1 L4M is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 4 .2 MAX. (0.165 MAX.) Bias resistors built-in type PNP transistor equivalent circuit. 2 .2 MAX.
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AA1A4P
Abstract: SC43B PA33
Text: NEC DESCRIPTION NPN SILICON TRANSISTOR AA1A4P The AA1A4P is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 52 MAX. (0204 MAX.) • Bias resistors built-in type NPN transistor equivalent circuit. >c R t = 10 ki2
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BN1A4M
Abstract: No abstract text available
Text: PNP SILICON TRANSISTOR BN1A4M DESCRIPTION The BN1A4M is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. in m illim ete rs inches FEATURE • 4 .2 MAX. (0.165 MAX.) Bias resistors built-in type PNP transistor equivalent circuit. 2 .2 MAX.
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BA1L3Z
Abstract: s3003 transistor k2
Text: NEC DESCRIPTION NPN SILICON TRANSISTOR BA1L3Z The BA1 L3Z is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in m illim ete rs inches 4 .2 MAX. (0.165 MAX.) • Bias resistors built-in type NPN transistor equivalent circuit.
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"transistor equivalent"
Abstract: BN1A4P
Text: NEC PNP SILICON TRANSISTOR B N 1A 4P DESCRIPTION The BN1A4P is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 4.2 MAX. (0.165 MAX. • Bias resistors built-in type PNP transistor equivalent circuit. 2.2 MAX.
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PA33
Abstract: No abstract text available
Text: NEC DESCRIPTION PNP SILICON TRANSISTOR AN1L3Z The A N1L3Z is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 52 MAX. (0204 MAX.) • Bias resistors built-in type PNP transistor equivalent circuit. iC Ri = 4.7 k n
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200CA
Abstract: No abstract text available
Text: NEC PNP SILICON TRANSISTOR B N 1L 3 Z DESCRIPTION The BN1L3Z is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 4 .2 MAX. (0.165 MAX.) • Bias resistors built-in type PNP transistor equivalent circuit.
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10-lB
200CA
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