TRANSISTOR F 482 Search Results

TRANSISTOR F 482 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR F 482 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
VPS05604 Abstract: No abstract text available Text: BFS 482 NPN Silicon RF Transistor 4 For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA f T = 8 GHz F = 1.2 dB at 900 MHz Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5	Original	PDF	VPS05604 EHA07196 OT-363 Oct-12-1999 VPS05604
RF NPN POWER TRANSISTOR 2.5 GHZ Abstract: VPS05604 Text: BFS 482 NPN Silicon RF Transistor 4 For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA f T = 8 GHz F = 1.2 dB at 900 MHz Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5	Original	PDF	VPS05604 EHA07196 OT-363 Oct-12-1999 RF NPN POWER TRANSISTOR 2.5 GHZ VPS05604
482 transistor Abstract: Q62702-F1573 GMA marking Text: BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	900MHz OT-363 Q62702-F1573 Dec-16-1996 482 transistor Q62702-F1573 GMA marking
nec 2571 Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .	OCR Scan	PDF	2SC4957 2SC4957-T1 4957-T2 2SC4957) nec 2571 NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
BD807 Abstract: transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 BD805 adc 809 Text: MOT O RO LA SC XSTRS/R F 15E D \| t>3b?2S4 GGfl47bl 5 \| 7^/j MOTOROLA SEM ICONDUCTO R TECHNICAL DATA PLASTIC HIGH POWER SILICON NPN TRANSISTOR 10 AMPERE POWER TRANSISTOR . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.	OCR Scan	PDF	G0fi47til BD805 BD809 BD806 BD807 Temperatu03 AN-415) transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 adc 809
Transistor C G 774 6-1 Abstract: C G 774 6-1 1041T060 Text: I MOTOROLA SC XSTRS/R F 4bE » • b3b?2SM 00=14722 T -3 MOTOROLA 3 ' 0 T ■flOTb 5 ■ I SEMICONDUCTOR I TECHNICAL DATA The RF Line HIGH FREQUEN CY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N designed specifically for broadband applications requiring low	OCR Scan	PDF
MRF260 Abstract: MRF262 MRF260 motorola B 647 AC transistor S0235 Text: I MOT OROL A SC XSTRS/R MbE F D b3b?2SM omMsa? MOTOROLA - SEMICONDUCTOR TECHNICAL DATA 3 3 2» - 00 MRF260 The R F Line SW 1 3 6 -1 7 5 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . d esigned fo r 12.5 V o lt VHF large-signal p o w e r a m p lifie r a p p li	OCR Scan	PDF	MRF260 MRF261 MRF262 MRF264 MRF260 MRF260 motorola B 647 AC transistor S0235
TRANSISTOR J 5804 NPN Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.	OCR Scan	PDF	2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
2SC784 Abstract: 2SC785 transistor 2sC784 2SC784-0 2sC785 transistor 2SC784 BN 2SC785 E D k30a 2SC784-BN 0a4b Text: z s i J D y N P N X e V Z S s P J l s y i s - t B h ^ y S s Z ? SILICON NPN EPITAXIAL PLANAR TRANSISTOR o FM R F J i l B f f l O F M Tuner and High F r e q u e n c y A mplifier A pp l i c a t i o n s • W ; Cre=CX65pF Typ. • Gp e = 2 0 d B (Typ. ) ( f=100MHz)	OCR Scan	PDF	CX65pF 100MHz) 2sc784 2sc785 re-90Â 2SC785 transistor 2sC784 2SC784-0 2sC785 transistor 2SC784 BN 2SC785 E D k30a 2SC784-BN 0a4b
MHQ6100 Abstract: IC AL 6001 Text: MOTOROLA SC XSTRS/R F Mt E D b3b?2SM 00^5457 b •MOTb MOTOROLA S E M IC O N D U C T O R i TECHNICAL DATA MHQ6100A DM0 Quad Small-Signal Transistor Suffixes: HX, HXV ii/ t u r Processed per MIL-S-19500/xxx NPN/PNP Com plem entary Pair QUAD TRANSISTOR NPN/PNP SILICON	OCR Scan	PDF	MHQ6100A MIL-S-19500/xxx O-116) MHQ6100 IC AL 6001
MRF476 Abstract: No abstract text available Text: I MOTOROLA SC XSTRS/R F 4bE D • b3b7ES4 O O ^ b ä ä 2 ■ PIOTb MOTOROLA m SEMICONDUCTOR I TECHNICAL DATA MRF476 The R F L in e 3 .0 W (P E P I- 3 .0 W (CW ) - 3 0 M H z RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . des ig n e d p rim a rily fo r use in sin g le s id eb an d lin e a r a m p lifie r	OCR Scan	PDF	MRF476 MRF476
Untitled Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R F •4bE D ■ b3b72 SM OOReSOT T ■ MOTb / MOTOROLA SEMICONDUCTOR TECHNICAL DATA Discrete Military Products DM0 lllllll NPN Silicon Small-Signal Transistor . . . designed for general-purpose switching and am plifier applications MM5682	OCR Scan	PDF	b3b72 MM5682 MIL-S-19500/xxx O-116)
482 transistor Abstract: transistor f 482 Text: SIEMENS BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • ¿r= 8G H z F = 1.2dB at 900MHz • Two galvanic internal isolated XL Transistors in one package "p H ETE" a ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	900MHz Q62702-F1573 OT-363 482 transistor transistor f 482
Untitled Abstract: No abstract text available Text: SIEMENS BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. •fx = 8GHz F= 1.2dB at 900MHz • Two galvanic internal isolated R h Transistors in one package n n j n t t ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	900MHz OT-363 Q62702-F1573 S3Sb05 Q1S21Ã IS211 235b05 G1221Ã

DIODE MOTOROLA 633 Abstract: NS 8002 1151 MQ6002I Text: MOTOROLA SC XSTRS/R F *4bE D b3b?2S4 OO T E Mb B 1 I MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Discrete Military Products Power Field-Effect Transistor DM0 mini N-Channel Enhancement-Mode Silicon Gate TM OS, with Current Sensing Capability MHR35N06M Suffixes:	OCR Scan	PDF	MHR35N06M MIL-S-19500/547 O-116) DIODE MOTOROLA 633 NS 8002 1151 MQ6002I
MRF344 Abstract: transistor D 2588 MRF340 MRF342 erie redcap 221A-04 RF POWER TRANSISTOR NPN 150 watts power amplifier layout TRANSISTOR 2586 Text: MOTOROLA SC XSTRS/R F 4bE b 3 b 7 2 S M OOTMbO? 1 » MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 60 W 1 0 0 -1 5 0 M H z R F POW ER T R A N S IS T O R NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . d e s ig n e d p r im a r ily f o r u s e in V H F a m p lifie r s w it h a m p litu d e	OCR Scan	PDF	b3b72SM MRF344 T0-220AB MRF340 MRF342 T-33-11 MRF344 transistor D 2588 erie redcap 221A-04 RF POWER TRANSISTOR NPN 150 watts power amplifier layout TRANSISTOR 2586
MRF517 Abstract: 2761 l transistor 336 motorola OB2200 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF517 The R F Line HIG H FREQUENCY NPN SILICON HIGH FREQ UENCY TRANSISTOR TRANSISTOR NPN SILICON . . . designed s p e c ific a lly fo r b roadb and a p p lic a tio n s re q u irin g lo w d is to r tio n characteristics. S p e cifie d fo r use in C A T V d is tr ib u tio n	OCR Scan	PDF	MRF517 MRF517 2761 l transistor 336 motorola OB2200
BGY133 Abstract: 65ZS 88-108 rf amplifier BGY132 vhf power module Text: Philips Semiconductors Product specification VHF amplifier modules BGY132; BGY133 FEA TUR ES D ES C R IPTIO N • Broadband V H F amplifiers The BGY132 and BGY133 are two stage amplifier modules. Each module comprises two NPN silicon planar transistor chips together with lumped-element	OCR Scan	PDF	BGY132; BGY133 BGY132 BGY133 -SOT132B MSB029 7110fl2b 65ZS 88-108 rf amplifier vhf power module
BGY133 Abstract: BGY132 dcn4 Text: Philips Semiconductors Product specification VHF amplifier modules BGY132; BGY133 FEA TUR ES D ES C R IPTIO N • Broadband V H F amplifiers The BGY132 and BGY133 are two stage amplifier modules. Each module comprises two NPN silicon planar transistor chips together with lumped-element	OCR Scan	PDF	BGY132; BGY133 BGY132 BGY133 -SOT132B MSB029 7110fl2b dcn4
IR 92 0151 Abstract: MM5680 to204ae Text: HOTOROLA SC XSTRS/R F ML E ^ 7 2 5 4 D 0052507 b • MOTt, p £ ? - Z t MOTOROLA SEMICONDUCTOR ■ TECHNICAL DATA Discrete Military Products PNP Silicon Sm all-Signal Transistor DM0 /I///// . . . designed for general-purpose switching and am plifier applications	OCR Scan	PDF	MM5680 MIL-S-19500/xxx O-116) IR 92 0151 MM5680 to204ae
2SC4317 Abstract: No abstract text available Text: TOSHIBA 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm + 0 .5 2 .5 - 0 . 3 • Low Noise Figure, High Gain. . NF = l.ld B , \|S2le \|2= 13dB f = 1GHz + 0 .2 5 1 .5 -0 .1 5 , HO	OCR Scan	PDF	2SC4317 SC-59 -j250 2SC4317
MM3227 Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b?55M 00*î24«î b S ■ f l O T b SEM ICONDUCTOR TECHNICAL DATA MM3227 Suffixes: Discrete M ilitary Products D m NPN Silicon Sm all-Signal Transistor H, HX //I//// . . . d esig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap p licatio n s	OCR Scan	PDF	MM3227 MIL-S-19500/317 O-116) MM3227
T39 diode Abstract: No abstract text available Text: m otorola sc XSTRS/R 2bE F D L»3b7254 00=10^00 3 MOTOROLA Order this data sheet by IRFZ34/D aai SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS This T M O S Power FET is designed for high voltage,	OCR Scan	PDF	3b7254 IRFZ34/D C65M2 IRFZ34 T39 diode
MTP12N10L Abstract: No abstract text available Text: MOTOROLA SC X S T R S /R F IM E D I t,3 b ? a S 4 □ 0 ^ 0 2 7 5 7 MOTOROLA - - 3 1 ? \| - m SEMICONDUCTOR TECHNICAL DATA MTP12N08L MTP12N10L Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs	OCR Scan	PDF	Y145M, 21A-04 O-220AB MTP12N10L

TRANSISTOR F 482 Search Results

TRANSISTOR F 482 Result Highlights (5)

TRANSISTOR F 482 Datasheets Context Search

VPS05604

RF NPN POWER TRANSISTOR 2.5 GHZ

482 transistor

nec 2571

BD807

Transistor C G 774 6-1

MRF260

TRANSISTOR J 5804 NPN

2SC784

MHQ6100

MRF476

Untitled

482 transistor

Untitled

DIODE MOTOROLA 633

MRF344

MRF517

BGY133

BGY133

IR 92 0151

2SC4317

MM3227

T39 diode

MTP12N10L