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    TRANSISTOR FGS Search Results

    TRANSISTOR FGS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR FGS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR FS 10 TM

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK455-1OOA/B BUK455 -100A -100B T0220AB BUK455-100A/B TRANSISTOR FS 10 TM PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK455-400B T0220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench' technology. The device features very low on-state resistance


    OCR Scan     		BUK7518-30 T0220AB -ID/100 PDF

    BUK443-60A

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK443-60A/B BUK443 OT186 BUK443-60A PDF

    TRANSISTOR BO 344

    Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		7110flSb BUK455-100A/B T0220AB BUK455 -100A -100B TRANSISTOR BO 344 TRANSISTOR BO 341 tny 175 BUK455-100A BUK455-100B data transistor 1650 PDF

    BUK455-400B

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL bSE J> 711002b T2b H P H I N Product Specification Philips Semiconductors BUK455-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


    OCR Scan     		711Gfi2b BUK455-400B -T0220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b 'lE D bbS3T31 0030bS5 312 * A P X Product Specification Philips Semiconductors BUK455-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		bbS3T31 0030bS5 BUK455-400B O220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: E5E D N AMER PHILIPS/DISCRETE bb53131 0D50445 b BUK453-50A BUK453-50B PowerMOS transistor T -3 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bb53131 0D50445 BUK453-50A BUK453-50B BUK453 inK453-50A T-39-n PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E D bbS3R31 ODBDhOO EOS H A P X Product Specification Philips Semiconductors BUK453-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


    OCR Scan     		bbS3R31 BUK453-60A/B O220AB BUK453 0030b04 PDF

    BUK455-60A

    Abstract: K455-60A BUK455-60B diode d2s BUK455 T0220AB k455
    Text: N AMER PHILIPS/DISCRETE LTE D ^53^31 □□3Db4Q TTl HiAPX Product Specification Philips Semiconductors B U K455-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		Q03DLi40 K455-60A/B T0220AB BUK455 BUK455-60A K455-60A BUK455-60B diode d2s T0220AB k455 PDF

    BUZ72

    Abstract: V103 TRANSISTOR V103 F5101
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ72 ObE D • ^53^31 ~ 0014430 7 . T - 3*7-1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ72 bbS3T31 7zms71j bfci53cà 001443b T-39-11 BUZ72 V103 TRANSISTOR V103 F5101 PDF

    Marking Code FGs

    Abstract: BSS-229 SS-229
    Text: SIEMENS SIPMOS Small-Signal Transistor BSS 229 • Fds • /„ • • • • • 250 V 0.07 A ^ D S o n 100 i2 N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code PinC onfigu ration Marking Tape and Reel


    OCR Scan     		SS229 Q62702-S567 Q62702-S600 E6296 25ance Marking Code FGs BSS-229 SS-229 PDF

    BSS139

    Abstract: kds 7g marking HSs SOT23 MARKING KDS SOT-23 marking BSs sot23 siemens
    Text: SIEMENS SIPMOS Small-Signal Transistor • • • • • • BSS 139 VDS ID 250 V 0.04 A -^DS on 100 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Pin C onfigu ration Marking Tape and Reel Information


    OCR Scan     		E6327: E7941 Q62702-S612 Q67000-S221 OT-23 SIK02349 BSS139 kds 7g marking HSs SOT23 MARKING KDS SOT-23 marking BSs sot23 siemens PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Small-Signal Transistor • VDS • ID BSP 135 600 V 0.100 A • -^DS on 60 • N channel • Depletion mode • High dynam ic resistance • Available grouped in FGS(m) Type Ordering Code T ap e and Reel Inform ation BSP 135 Q62702-S655


    OCR Scan     		67000-S283 OT-223 Q62702-S655 E6906: fi23SbDS fl535bOS PDF

    MARKING CODE AGS

    Abstract: TRANSISTOR BSP 2000
    Text: SIEMENS SIPMOS Small-Signal Transistor • • ID Fds 240 V 0.2 A • ^ D S o n 20 Q • • • • N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code BSP 129 Tape and Reel Information Pin Conf igura tion Marking


    OCR Scan     		Q67000-S073 E6327 Q67000-S314 E7941 OT-223 MARKING CODE AGS TRANSISTOR BSP 2000 PDF

    ss129

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Small-Signal Transistor • FDS 240 v • /„ 0.15 A • ^ D S o n 20 Q • • • • N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code B S S 129 Tape and Reel Information PinC onfigu ration Marking


    OCR Scan     		Q62702-S510 Q62702-S015 E6288 Q67000-S116 E6296 SIK02548 ss129 PDF

    Marking Code FGs

    Abstract: MARKING CODE AGS E6906 BSP135
    Text: SIEMENS SIPMOS Small-Signal Transistor • rDS BSP 135 6oo v • /„ ® • • • • 0.100 A ^ D S o n 60 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Information Pin Conf gura tion Marking Package


    OCR Scan     		OT-223 Q62702-S655 E6327 Q67000-S283 E6906 SIK02140 Marking Code FGs MARKING CODE AGS BSP135 PDF

    8065S

    Abstract: TRANSISTOR BSP 149
    Text: SIEMENS SIPMOS Small-Signal Transistor BSP 149 200 V 0.48 A •^DS on 3.5 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) ^D S Id • • • • Type Ordering Code B S P 149 Q67000-S071 Tape and Reel Information Pin Conf igura tion Marking


    OCR Scan     		Q67000-S071 OT-223 8065S TRANSISTOR BSP 149 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET PHP65N06LT, PHB65N06LT SYMBOL FEATURES QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics


    OCR Scan     		PHP65N06LT, PHB65N06LT PHP65N06LT T0220AB) PHB65N06LT OT404 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILT^S/B IS CRETE b'lE T> • bb53R31 0030646 T44 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power


    OCR Scan     		bb53R31 BUK582-100A OT223 Q030AS3 OT223. PDF

    Untitled

    Abstract: No abstract text available
    Text: HIP0061 S e m iconductor 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transis­


    OCR Scan     		HIP0061 HIP0061 100mJ 5M-1982. PDF

    MARKING 19S

    Abstract: bfq 85 fgs npn Q62702-F1088 Marking Code FGs
    Text: BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		Q62702-F1088 OT-89 Dec-16-1996 MARKING 19S bfq 85 fgs npn Q62702-F1088 Marking Code FGs PDF

    transistor buz 36

    Abstract: transistor buz 19 BUZ11 transistor buz 10 al p80 transistor transistor buz 11 C67078-S1330-A3 transistor buz 90 BUZ 140 L
    Text: SIEM ENS SIPMOS Power Transistor • • • • BUZ 11 AL N channel Enhancement mode Logic Level Avalanche-rated Type VDS /d •^DS on Package 1> Ordering Code BUZ 11 AL 50 V 26 A 0.055 Q TO-220 AB C67078-S1330-A3 Maximum Ratings Parameter Symbol Values


    OCR Scan     		O-220 C67078-S1330-A3 SIL02831 SIL02834 transistor buz 36 transistor buz 19 BUZ11 transistor buz 10 al p80 transistor transistor buz 11 transistor buz 90 BUZ 140 L PDF

    BUZ171

    Abstract: No abstract text available
    Text: SIEMENS 10427 SIPMOS Power Transistor BUZ 171 • P channel • Enhancement mode • Avalanche rated Type BUZ 171 VDS -5 0 V Id -8 .0 A ^OS on 0.3 Q Package 1> Ordering Code TO-220 AB C67078-S1450-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 30 *C


    OCR Scan     		O-220 C67078-S1450-A2 SIL03608 BUZ171 PDF