MARKING 19S
Abstract: bfq 85 fgs npn Q62702-F1088 Marking Code FGs
Text: BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
PDF
|
Q62702-F1088
OT-89
Dec-16-1996
MARKING 19S
bfq 85
fgs npn
Q62702-F1088
Marking Code FGs
|
TRANSISTOR FS 10 TM
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
PDF
|
BUK455-1OOA/B
BUK455
-100A
-100B
T0220AB
BUK455-100A/B
TRANSISTOR FS 10 TM
|
Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
PDF
|
BUK455-400B
T0220AB
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench' technology. The device features very low on-state resistance
|
OCR Scan
|
PDF
|
BUK7518-30
T0220AB
-ID/100
|
BUK443-60A
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
PDF
|
BUK443-60A/B
BUK443
OT186
BUK443-60A
|
TRANSISTOR BO 344
Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
|
OCR Scan
|
PDF
|
7110flSb
BUK455-100A/B
T0220AB
BUK455
-100A
-100B
TRANSISTOR BO 344
TRANSISTOR BO 341
tny 175
BUK455-100A
BUK455-100B
data transistor 1650
|
BUK455-400B
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE J> 711002b T2b H P H I N Product Specification Philips Semiconductors BUK455-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
|
OCR Scan
|
PDF
|
711Gfi2b
BUK455-400B
-T0220AB
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b 'lE D bbS3T31 0030bS5 312 * A P X Product Specification Philips Semiconductors BUK455-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
|
OCR Scan
|
PDF
|
bbS3T31
0030bS5
BUK455-400B
O220AB
|
Untitled
Abstract: No abstract text available
Text: E5E D N AMER PHILIPS/DISCRETE bb53131 0D50445 b BUK453-50A BUK453-50B PowerMOS transistor T -3 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
|
OCR Scan
|
PDF
|
bb53131
0D50445
BUK453-50A
BUK453-50B
BUK453
inK453-50A
T-39-n
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E D bbS3R31 ODBDhOO EOS H A P X Product Specification Philips Semiconductors BUK453-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
|
OCR Scan
|
PDF
|
bbS3R31
BUK453-60A/B
O220AB
BUK453
0030b04
|
BUK455-60A
Abstract: K455-60A BUK455-60B diode d2s BUK455 T0220AB k455
Text: N AMER PHILIPS/DISCRETE LTE D ^53^31 □□3Db4Q TTl HiAPX Product Specification Philips Semiconductors B U K455-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
|
OCR Scan
|
PDF
|
Q03DLi40
K455-60A/B
T0220AB
BUK455
BUK455-60A
K455-60A
BUK455-60B
diode d2s
T0220AB
k455
|
BUZ72
Abstract: V103 TRANSISTOR V103 F5101
Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ72 ObE D • ^53^31 ~ 0014430 7 . T - 3*7-1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
|
OCR Scan
|
PDF
|
BUZ72
bbS3T31
7zms71j
bfci53cÃ
001443b
T-39-11
BUZ72
V103 TRANSISTOR
V103
F5101
|
Marking Code FGs
Abstract: BSS-229 SS-229
Text: SIEMENS SIPMOS Small-Signal Transistor BSS 229 • Fds • /„ • • • • • 250 V 0.07 A ^ D S o n 100 i2 N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code PinC onfigu ration Marking Tape and Reel
|
OCR Scan
|
PDF
|
SS229
Q62702-S567
Q62702-S600
E6296
25ance
Marking Code FGs
BSS-229
SS-229
|
BSS139
Abstract: kds 7g marking HSs SOT23 MARKING KDS SOT-23 marking BSs sot23 siemens
Text: SIEMENS SIPMOS Small-Signal Transistor • • • • • • BSS 139 VDS ID 250 V 0.04 A -^DS on 100 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Pin C onfigu ration Marking Tape and Reel Information
|
OCR Scan
|
PDF
|
E6327:
E7941
Q62702-S612
Q67000-S221
OT-23
SIK02349
BSS139
kds 7g
marking HSs SOT23
MARKING KDS SOT-23
marking BSs sot23 siemens
|
|
s149
Abstract: transistor Siemens 14 S S 92
Text: SIEMENS SIPMOS Small-Signal Transistor • • • • • • • B SS 149 Vos 200 V ID 0.35 A ^DS on 3.5 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Inform ation PinC onfigu ration Marking
|
OCR Scan
|
PDF
|
E6325:
SS149
Q62702-S623
Q67000-S252
s149
transistor Siemens 14 S S 92
|
MARKING CODE AGS
Abstract: TRANSISTOR BSP 2000
Text: SIEMENS SIPMOS Small-Signal Transistor • • ID Fds 240 V 0.2 A • ^ D S o n 20 Q • • • • N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code BSP 129 Tape and Reel Information Pin Conf igura tion Marking
|
OCR Scan
|
PDF
|
Q67000-S073
E6327
Q67000-S314
E7941
OT-223
MARKING CODE AGS
TRANSISTOR BSP 2000
|
ss129
Abstract: No abstract text available
Text: SIEMENS SIPMOS Small-Signal Transistor • FDS 240 v • /„ 0.15 A • ^ D S o n 20 Q • • • • N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code B S S 129 Tape and Reel Information PinC onfigu ration Marking
|
OCR Scan
|
PDF
|
Q62702-S510
Q62702-S015
E6288
Q67000-S116
E6296
SIK02548
ss129
|
Marking Code FGs
Abstract: MARKING CODE AGS E6906 BSP135
Text: SIEMENS SIPMOS Small-Signal Transistor • rDS BSP 135 6oo v • /„ ® • • • • 0.100 A ^ D S o n 60 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Information Pin Conf gura tion Marking Package
|
OCR Scan
|
PDF
|
OT-223
Q62702-S655
E6327
Q67000-S283
E6906
SIK02140
Marking Code FGs
MARKING CODE AGS
BSP135
|
8065S
Abstract: TRANSISTOR BSP 149
Text: SIEMENS SIPMOS Small-Signal Transistor BSP 149 200 V 0.48 A •^DS on 3.5 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) ^D S Id • • • • Type Ordering Code B S P 149 Q67000-S071 Tape and Reel Information Pin Conf igura tion Marking
|
OCR Scan
|
PDF
|
Q67000-S071
OT-223
8065S
TRANSISTOR BSP 149
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET PHP65N06LT, PHB65N06LT SYMBOL FEATURES QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics
|
OCR Scan
|
PDF
|
PHP65N06LT,
PHB65N06LT
PHP65N06LT
T0220AB)
PHB65N06LT
OT404
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILT^S/B IS CRETE b'lE T> • bb53R31 0030646 T44 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power
|
OCR Scan
|
PDF
|
bb53R31
BUK582-100A
OT223
Q030AS3
OT223.
|
Untitled
Abstract: No abstract text available
Text: HIP0061 S e m iconductor 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transis
|
OCR Scan
|
PDF
|
HIP0061
HIP0061
100mJ
5M-1982.
|
transistor buz 36
Abstract: transistor buz 19 BUZ11 transistor buz 10 al p80 transistor transistor buz 11 C67078-S1330-A3 transistor buz 90 BUZ 140 L
Text: SIEM ENS SIPMOS Power Transistor • • • • BUZ 11 AL N channel Enhancement mode Logic Level Avalanche-rated Type VDS /d •^DS on Package 1> Ordering Code BUZ 11 AL 50 V 26 A 0.055 Q TO-220 AB C67078-S1330-A3 Maximum Ratings Parameter Symbol Values
|
OCR Scan
|
PDF
|
O-220
C67078-S1330-A3
SIL02831
SIL02834
transistor buz 36
transistor buz 19
BUZ11
transistor buz 10
al p80 transistor
transistor buz 11
transistor buz 90
BUZ 140 L
|
BUZ171
Abstract: No abstract text available
Text: SIEMENS 10427 SIPMOS Power Transistor BUZ 171 • P channel • Enhancement mode • Avalanche rated Type BUZ 171 VDS -5 0 V Id -8 .0 A ^OS on 0.3 Q Package 1> Ordering Code TO-220 AB C67078-S1450-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 30 *C
|
OCR Scan
|
PDF
|
O-220
C67078-S1450-A2
SIL03608
BUZ171
|