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    TRANSISTOR G 945 Search Results

    TRANSISTOR G 945 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR G 945 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    BLX92A

    Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
    Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


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    BLX92A BLX92A BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944 PDF

    transistor rf m 9860

    Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490
    Text: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for


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    520MHz RD30HUF1 520MHz 25deg Jun008 RD30HUF1 transistor rf m 9860 equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490 PDF

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


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    2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922 PDF

    BLX92A

    Abstract: feedthrough cap
    Text: P H I L IP S I N T E R N A T I O N A L 41E D S3 711ÜÖSb 0057Ö37 G H P H I N BLX92A M A IN TE N A N C E TYPE r-33~0S U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a supply voltage up to 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe


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    BLX92A 711002b 002704b BLX92A feedthrough cap PDF

    tokin

    Abstract: Bipolar Static Induction Transistor transistor 03e static induction transistor 9936 transistor tokin transistor "static induction transistor" TOKIN America STATIC INDUCTION tokin
    Text: TOKIN CORP NEW PRODUCTS UPDATE 54E D • *ìGb7b2b D D G 1 Q S G 202 H I T O A I T O K in TOKIN B-SIT New TBM Series led. Outline • TOKIN is offering a new series of normally-off Bipolar mode Static Induction Transistor B-SIT constructed using small-sized molded packages in a Darlington configuration.


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    dimensions56 2-26A UD-03E N920920P1 tokin Bipolar Static Induction Transistor transistor 03e static induction transistor 9936 transistor tokin transistor "static induction transistor" TOKIN America STATIC INDUCTION tokin PDF

    Westinghouse diode

    Abstract: KS8245A1 WESTINGHOUSE dc motor Westinghouse power diode S-8245 WESTINGHOUSE ELECTRIC westinghouse ac motor ks82
    Text: r 7294621 PQWEREX INC dT | 75^51 DOOgflflT 7 B ~ — & Single Darlington TRANSISTOR Module Dim A B C D E F G H J K Inches 1.54 Max 1.27 * 0.008 .77 .65 .94 .276 .146 .165 .945 .126 T-33-35 15 Amperes 450 Volts Millimeters 39 Max 32.2 * 0.2 19.5 16.6 24 Max


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    T-33-35 KS8245A110 75T4b21 KS8245A110 Westinghouse diode KS8245A1 WESTINGHOUSE dc motor Westinghouse power diode S-8245 WESTINGHOUSE ELECTRIC westinghouse ac motor ks82 PDF

    IR2E27A

    Abstract: Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28
    Text: Product Lineup Product Lineup • Transistor Arrays 'S H A R P 4 Product Lineup SHARP 5 Product Lineup ■ Special Function Transistor Arrayys F u nc ti o n Mo del No. O utput v o lt a g e 1mA V) 400 12 -c irc u it P rinte r D river and IR 2402 1 - c i r c u i t R ib b o n Shif t D r i v e r


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    24DIP/24SOP IR2C10 IR2E34 IR2E27A Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 334 SIPMOS Power Transistor • N channel • Enhancement mode V3I0&'58 >f é Ì • Avalanche-rated Pin 1 Pin 2 G Type BUZ 334 Vbs 600 V Pin 3 D S b ffDS on Package Ordering Code 12 A 0.5 n TO-218AA C67078-S3130-A2 Maximum Ratings Parameter


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    O-218AA C67078-S3130-A2 A235bG5 PDF

    A4506

    Abstract: diode 334 buz334
    Text: SIEMENS BUZ 334 SIPMOS Power Transistor • N channel • Enhancement mode Vir 05'5S ' fé • Avalanche-rated 3 P in i Pin 2 G Type BUZ 334 Vbs 600 V b 12 A ^bs<on 0.5 £2 Pin 3 D S Package Ordering Code TO-218AA C67078-S3130-A2 Maximum Ratings Parameter


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    O-218AA C67078-S3130-A2 O-218AA A4506 diode 334 buz334 PDF

    TC-7986A

    Abstract: 2SK2112 CMS01 7986A diode lt 0236
    Text: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,


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    2SK2112 oeTi14 a-Ti4S24# TC-7986A CMS01 7986A diode lt 0236 PDF

    14549F

    Abstract: itt 946 946-5D itt 9094 ITT 946-1D dtl logic gates 9094-5d ITT 9097 5D ITT DTL 944-5D
    Text: ITT Sem iconductors Integrated C irc u its -D T L D T L Series L o g ic Elem ents The D T L fam ily is a com prehensive set of silicon m onolithic logic elements designed to cover a wide range of military and industrial applications. The basis of the fam ily is a diode-transistor


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    20MHz. 14549F itt 946 946-5D itt 9094 ITT 946-1D dtl logic gates 9094-5d ITT 9097 5D ITT DTL 944-5D PDF

    PA1501

    Abstract: s 452-2 lt0246 NEC TRANSISTOR 8882 uPA1501 3TAE1 ssg diode fta 501 diode sg 5 ts
    Text: ^ — 5 7 .= / — SEC ï ï t h Compound Field Effect Power Transistor / v t x ¿ N ^ ^ U x n ^ -M O S FET ¿ P A 5 I 1 7W I i f f l //PA1501 ±, 4 V . f g g j N f - ^ ^ 'V - M O S F E T £ 4 M OS F E T T “1 - C 0 T iJlffln ^ - y ^ IC K £ l * l / L T ^ Î - f W Ü - / 1 V ^ J^ ' 7 - - 7 Bn ^


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    uPA1501 PA1501 s 452-2 lt0246 NEC TRANSISTOR 8882 3TAE1 ssg diode fta 501 diode sg 5 ts PDF

    A1604C

    Abstract: P16C T108 T450 T540 PA1604
    Text: NEC •• ■5 / — K Compound Field Effect P o w er Transistor u ^ y U '> y ^ / ¿ P A 1 6 0 4 ¡ 2 /< 7 -M O S P A 1 6 4 F E T 7 K , F E T ^ & £ 4 / 'Jy 7 ^ ^ 7 - M 0 S m ill& C H f W /> i K, X T '/ h °^ ^ E - ^ f | x g Jjf f lh L T ^ jU T '- T o $1


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    2SC4813

    Abstract: VDF pn C40r
    Text: / \ ° 9 ~ y=7 > v 7 , $ Silicon Power Transistor 2SC4813 N PN X fcf $ + V 7JI/M v y =i > h -7 > y * £ 2SC4813 i, ¡ i î ü X ' f - y f L T i m $ a 7 ,i^Not7 - h 7 > >>X ? T'fÈ VCE(sat T'hFE^ ' lSJ'v ^ T " D C / D C r? L T ^ iS T 't o É fc , «F 7 ^ T ^ T - h 0> ^ " j± iiT 'g ijj^ ^ B ^ ^ 0' y ^ - ^ r è


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    2SC4813 2SC4813 D15603JJ2V0DS00 TC-7819) VDF pn C40r PDF

    TC-7606

    Abstract: 2SK1283
    Text: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to


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    2SK1283 2SK1283 TC-7606 PDF

    2sk81

    Abstract: 2SK812 IEM-521 blf 578 3854 ru 4c diode
    Text: M O S Field Effect P o w e r Transistor 2SK812 M O S FET jim m 2SK812 li, N IZ «fc ^ ¡ É ^ f ê K O T f ë f r i i i i È X >f f f- > t > Î 6 Î n > 1 g u / y # 'f MOS F E T T”, 5 V f H 7 K , < , > X 7 ^ S ^ y f > ijf [ J ic ^ # 1 4 a T t ¥ m m ,


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    2SK812 2SK812 2sk81 IEM-521 blf 578 3854 ru 4c diode PDF

    sje 2762

    Abstract: uPA671T transistor a935 a935 transistor ic-8845
    Text: h — '> U =1 > Silicon Transistor UPA671T P N P X l h 7 > fé J ^ Æ v 7 ^ 6 t f > 2 IU îèS Ü 'f iÆ /¿PA671TO, h 7 > v Z $ £20Ï&F*3Ü? U/c 5 K x / \ '< x U , Ü H æ j f CD[S]±, x h ^ g lM i;: » i l / S t o <=D m o S C - 7 0 / \° "J * T- v £ IH D tt- - f X < D / \" "J >t -


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    uPA671T PA671TO, sje 2762 transistor a935 a935 transistor ic-8845 PDF

    D1351

    Abstract: ELLS 110 2SA1458 U110 5925B
    Text: Silicon Transistor 2SA1458 P N P n L £ ? j r ' > 7 J U i & ' > ' z i > b :ÿ > i S Z > 9 m m p i g i l i ¿s j: z f * m # m x + » 0X4 o - y f > =r u 9 ï f â f n m i î & ' h S 0 3 1 / ^ : ? i i r ! l ; ô iV J ' ? v \, t 'o 02SC3731 t rJ>7°'J / 'y 9 UTÎÎfflT'ë i t o


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    2SA1458 02SC3731 D13515JJ4V0DS00 TC-5925B) D1351 ELLS 110 2SA1458 U110 5925B PDF

    2SD552

    Abstract: QS 100 NPN Transistor 2SB552 AC73 static characteristic BO180 a944 transistor 5Ft 2SD552-BN
    Text: 2SD SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR 552 TENTATIVE o v ry ?m O I It X I ffl INDUSTRIAL APPLICATIONS O DC-DCay/f-ifl » Pow er A m p l i f i e r , o D O -D C C o n v e r t e r a n d R e g u l a t o r A p p l i c a t i o n s . • ! 8 B5 5 U • U n i t i n mm


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    2SB552 2sd552 2SD552 QS 100 NPN Transistor 2SB552 AC73 static characteristic BO180 a944 transistor 5Ft 2SD552-BN PDF

    2sc 945 p transistor

    Abstract: transistor 2sc 945 945 npn transistor c 945 945 TRANSISTOR transistor amplifier 5v to 6v lc 945 transistor transistor 945 oms 450 TRANSISTOR 2SC
    Text: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE 1’0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RÏ TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C o lle c to r-B a s e V o ltag e


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    2SA733. T0-92B 100mA 200mA 250mW 3-B93303 J0321 2sc 945 p transistor transistor 2sc 945 945 npn transistor c 945 945 TRANSISTOR transistor amplifier 5v to 6v lc 945 transistor transistor 945 oms 450 TRANSISTOR 2SC PDF

    AZ530-08-1

    Abstract: az530 5V RELAY diode 310Q CALEX VOLTSENSOR relay 5 V 28V relay McEx TRANSISTOR 4841 10J1
    Text: Model 540 Voltsensor CALEX MANUFACTURING CO SEE 2401 Stanwell Drive, Concord, CA 94520-4841 D • 1011250 000105b 37b « C E X - T 'T 510 687-4411 (800) 542-3355 v s :*» _ FAX: (510) 687-3333 FEATURES • Rugged reliable solid state replacement for meter


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    000105b 32VDC 10msec 540/MK AZ53D-12-T AZ530-08-1 54D/MK AZ530-08-1 az530 5V RELAY diode 310Q CALEX VOLTSENSOR relay 5 V 28V relay McEx TRANSISTOR 4841 10J1 PDF

    Untitled

    Abstract: No abstract text available
    Text: CALEX MANUFACTURING CO S2E D I IflllESG GDGIGBT 2^7 ICEX Models 166 and 167 Bridgesensors 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 BRIDGE POWER SUPPLY FAX: (510) 687-3333 7 1 -U -0 7 The bridge power supply is an adjustable regulated


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    bridge type transducer

    Abstract: pressure transducer application Grounded Bridge Power Amplifier schematic circuit diagram rtd pressure instrumentation amplifier circuit temperature sensor using instrumentation amplifier circuit variable dc power supply 3 to 15 volt circuit rtd temperature instrumentation amplifier circuit the Instrumentation amplifier with the bridge type transducer instrumentation amplifier bridge transducer VR103V
    Text: CALEX M A N U F A C T U R I N G CO £ 5 ië < 1B11250 52E D ICEX DD01033 07^ Model 165 Bridgesensor 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 FAX: (510) 687-3333 'T '- 7 ! - U ^ 7 FEATURES • No other Function Modules N eed ed . Just Add Power.


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    1B11250 DD01033 MK165 bridge type transducer pressure transducer application Grounded Bridge Power Amplifier schematic circuit diagram rtd pressure instrumentation amplifier circuit temperature sensor using instrumentation amplifier circuit variable dc power supply 3 to 15 volt circuit rtd temperature instrumentation amplifier circuit the Instrumentation amplifier with the bridge type transducer instrumentation amplifier bridge transducer VR103V PDF