TRANSISTOR GAN Search Results

TRANSISTOR GAN Result Highlights (5)

Part	Manufacturer	Description
TM-100	Rochester Electronics LLC	TM-100/CLF1G0035S-100 - 100W Broadband RF Power RF Mosfet Gan HEMT
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL

TRANSISTOR GAN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MAGX-000025-150000 GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz Rev. V1 Features •       MAGX-000025-150000 GaN on SiC Transistor Technology Broadband Unmatched Transistor Common-Source Configuration +50 V Typical Operation Class AB Operation	Original	PDF	MAGX-000025-150000 MAGX-000025-150000 GX0025-150
GaN TRANSISTOR Abstract: RF3932 rf3931 RF3934 RF3933 RF393x transistor hemt Text: RFMD . Gallium Nitride High Power Transistors Introducing the development of RFMD’s GaN unmatched power transistor UPT family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 µm GaN high electron mobility transistor (HEMT) semiconductor	Original	PDF	RF393x simple40 GaN TRANSISTOR RF3932 rf3931 RF3934 RF3933 transistor hemt
GaN ADS Abstract: GaN amplifier 120W transistor hemt RF393x Text: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,	Original	PDF	RF393x 900MHz 220mA) 220mA, RF3934 440mA) 900MHz) GaN ADS GaN amplifier 120W transistor hemt
BP 109 transistor Abstract: transistor BP 109 CHK015A-SMA CHK015A HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01 Text: Advance Information: AI1010 15W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK015A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.	Original	PDF	AI1010 CHK015A AN0019 AN0020 ES-CHK015A-SMA AI10101182 BP 109 transistor transistor BP 109 CHK015A-SMA HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01
CHK040A-SOA Abstract: CHK-04 Text: Advance Information: AI1011 40W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK040A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.	Original	PDF	AI1011 CHK040A AN0019 AN0020 ES-CHK040A-SOA AI1011182 CHK040A-SOA CHK-04
Untitled Abstract: No abstract text available Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The	Original	PDF	SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809
SGA8543Z-EVB2 Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The	Original	PDF	SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809 SGA8543Z-EVB2 marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
diode RU 3AM Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)	Original	PDF
Untitled Abstract: No abstract text available Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from	Original	PDF	SGA9089Z OT-89 SGA9089Z 50MHz 05GHz 44GHz
MAGX-000035-100000 Abstract: GaN amplifier 100W transistor 15 GHz Gan on silicon transistor MAGX-000035-SB2PPR 2.4 GHz rf amplifier 100w 100WCW MAGX-000035 Text: MAGX-000035-100000 GaN HEMT Power Transistor 100W CW, 30 MHz - 3.5 GHz Preliminary, 23 Aug 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation	Original	PDF	MAGX-000035-100000 MAGX-000035-100000 GaN amplifier 100W transistor 15 GHz Gan on silicon transistor MAGX-000035-SB2PPR 2.4 GHz rf amplifier 100w 100WCW MAGX-000035
MAGX-003135-120L00 Abstract: 003135 EAR99 Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Preliminary 28 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation	Original	PDF	MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00 003135
transistor GaN Abstract: No abstract text available Text: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features Rev. V3 MAGX-000035-010000 Flanged • GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching	Original	PDF	MAGX-000035-010000 MAGX-000035-01000S MAGX-000035-01000X transistor GaN
Transistor TL 31 AC Abstract: j142 Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from	Original	PDF	SGA9089Z OT-89 SGA9089Z 50MHz 44GHz 170mA DS110606 Transistor TL 31 AC j142
SiGe POWER TRANSISTOR Abstract: Gan hemt transistor RFMD InP HBT transistor low noise Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from	Original	PDF	SGA9089Z SGA9089Z OT-89 50MHz 05GHz 44GHz SiGe POWER TRANSISTOR Gan hemt transistor RFMD InP HBT transistor low noise

EAR99 Abstract: HEMT 36 ghz transistor Text: MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation	Original	PDF	MAGX-003135-180L00 300us EAR99 MAGX-003135-180L00 HEMT 36 ghz transistor
SGA-9089Z Abstract: InP HBT transistor low noise Text: SGA-9089Z SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from	Original	PDF	SGA-9089Z OT-89 SGA-9089Z 50MHz 170mA EDS-105051 SGA9089Z" InP HBT transistor low noise
SGA9289Z Abstract: No abstract text available Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This	Original	PDF	SGA9289Z OT-89 SGA9289Z SGA9289Zâ SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1
Untitled Abstract: No abstract text available Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF	Original	PDF	SGA9189Z OT-89 SGA9189Z 39dBm, SGA9189Zâ SGA9189ZSQ SGA9189ZSR
SGA9289Z Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9 Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This	Original	PDF	SGA9289Z SGA9289Z OT-89 SGA9289Z" SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1 MARKING P2Z SGA-9289z rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
HEMT 36 ghz transistor Abstract: No abstract text available Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 Dec 11 Features • • • • • • • • GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation	Original	PDF	MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00 HEMT 36 ghz transistor
MAGX-003135-030L00 Abstract: No abstract text available Text: MAGX-003135-030L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation	Original	PDF	MAGX-003135-030L00 500us MAGX-003135-030L00
Gan on silicon Abstract: 960-1215MHz jtids amplifier 250W MAGX-000 Text: MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration	Original	PDF	MAGX-000912-250L00 MAGX-000912-250L00 Gan on silicon 960-1215MHz jtids amplifier 250W MAGX-000
MAGX-000912-125L00 Abstract: transistor 1.25W MAGX000912125L00 sic wafer 100 mm MAGX-000 Text: MAGX-000912-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration	Original	PDF	MAGX-000912-125L00 MAGX-000912-125L00 transistor 1.25W MAGX000912125L00 sic wafer 100 mm MAGX-000
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	PDF	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

TRANSISTOR GAN Search Results

TRANSISTOR GAN Result Highlights (5)

TRANSISTOR GAN Datasheets Context Search

Untitled

GaN TRANSISTOR

GaN ADS

BP 109 transistor

CHK040A-SOA

Untitled

SGA8543Z-EVB2

diode RU 3AM

Untitled

MAGX-000035-100000

MAGX-003135-120L00

transistor GaN

Transistor TL 31 AC

SiGe POWER TRANSISTOR

EAR99

SGA-9089Z

SGA9289Z

Untitled

SGA9289Z

HEMT 36 ghz transistor

MAGX-003135-030L00

Gan on silicon

MAGX-000912-125L00

la 4440 amplifier circuit diagram 300 watt