sot231a
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Mar 27 2001 Jul 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U FEATURES QUICK REFERENCE DATA
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M3D102
PBSS5140U
613514/02/pp12
sot231a
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IRGPH50M
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD - 9.1030 IRGPH50M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGPH50M
10kHz)
O-247AC
C-476
IRGPH50M
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IC C399
Abstract: IRGPC50MD2 c406 600V 25A Ultrafast Diode NS100
Text: Previous Datasheet Index Next Data Sheet PD - 9.1145A IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPC50MD2
10kHz)
O-247AC
C-406
IC C399
IRGPC50MD2
c406
600V 25A Ultrafast Diode
NS100
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IRGPH50M
Abstract: C-471
Text: PD - 9.1030 IRGPH50M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency
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IRGPH50M
10kHz)
O-247AC
C-476
IRGPH50M
C-471
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IRGPH50M
Abstract: transistor BR 471 A
Text: PD - 9.1030 IRGPH50M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency
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IRGPH50M
10kHz)
O-247AC
C-476
IRGPH50M
transistor BR 471 A
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1
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70nh
Abstract: rg4 16 diode RG4 DIODE CE900
Text: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1
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IGBT FF 300 r12
Abstract: FF400R12KF4 FF400R12KF
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2
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A15/97
FF400R12KF4
IGBT FF 300 r12
FF400R12KF4
FF400R12KF
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G1 TRANSISTOR
Abstract: FF 150 R 1200 kf igbt FF600R12KF4 Transistor g1 IGBT 600V 600A JE 800 transistor
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2
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A13/97
FF600R12KF4
G1 TRANSISTOR
FF 150 R 1200 kf igbt
FF600R12KF4
Transistor g1
IGBT 600V 600A
JE 800 transistor
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TRANSISTOR GB 558
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •
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2SC5013
2SC5013-T1
2SC5013-T2
TRANSISTOR GB 558
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2SC5012-T1
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •
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2SC5012
2SC5012-T1
2SC5012-T2
2SC5012-T1
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UltraFast 5-40 kHz
Abstract: No abstract text available
Text: PD -91750 International Rectifier IÖR IRG4IBC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ery Low 1.66V vota ge drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink
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IRG4IBC20FD
UltraFast 5-40 kHz
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tsc 894 transistor
Abstract: mosfet 600V 30A c894
Text: kitemational logRectifier P D - 9.1034 IRGPC50K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features : j • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz,
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IRGPC50K
C-895
O-247AC
C-896
tsc 894 transistor
mosfet 600V 30A
c894
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Untitled
Abstract: No abstract text available
Text: PD- 91751 International IÖR Rectifier IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • • • • V ery Low 1.59V vota ge drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink
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IRG4IBC30FD
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Transistor BC 227
Abstract: No abstract text available
Text: PD-9.1620 International I R Rectifier IRG4 BC 2 0 K-S prelim inary Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =1 Ops, @360V VCE start , T j = 125°C, V ge = 15V
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554S2
Transistor BC 227
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LA 7693
Abstract: ic CD 4047 7737 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain
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2SC5014
2SC5014-T1
2SC5014-T2
LA 7693
ic CD 4047
7737 transistor
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Untitled
Abstract: No abstract text available
Text: P D - 9.1030 International ioRRectîfier IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, V ge = 15V V CES = 1 200V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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OCR Scan
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IRGPH50M
10kHz)
O-247AC
C-476
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Untitled
Abstract: No abstract text available
Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST T he N E 9 44 series o f NPN silicon epitaxial b ipo lar transisto rs is intended fo r use in ge ne ral purpose U H F o scilla to r and m ixer applicatio ns. It is su ita b le fo r au tom otive keyless entry
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NE944
NE94430
2SC4184
NE94430-T2
NE94433-T1B
24-Hour
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MRF9331
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor ‘ European Part Number . d e sign e d prim arily for u se in low p ow er am plifiers to 1 GHz. Ideal for p a ge rs and other battery operated sy ste m s w here low pow er c o n su m p tio n is critical.
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transistor Bc 230
Abstract: BC393
Text: BC 393 SILICON PLANAR PNP HIGH V O L T A G E A M P L IF IE R The B C 3 9 3 is a silicon planar epitaxial P N P transistor in Jedec T O - 1 8 metal case, designed for general p urpose h igh-volta ge and vide o am plifier applications. T h e com p lem entary N P N type is the B C 394.
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-100V
transistor Bc 230
BC393
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ScansUX56
Abstract: No abstract text available
Text: BC 394 SILICON PLANAR NPN HIGH V O L T A G E A M P L IF IE R The B C 3 9 4 is a silicon planar epitaxial N P N transistor in Jedec: T O - 1 8 metal case, designed for general purp ose high-volta ge and vide o am plifier applications. T h e com p lem entary P N P type is the B C 393.
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2N2907
Abstract: 935J
Text: A L LE GR O M I C R O S Y S T E M S INC T3» D • 0 S Ü 4 33 Ô 0 0 0 3 73 1 7 ■ AL6R i PROCESS TQL Process TQL PNP Small-Signal Transistor Process T Q L is a double-diffused P N P silicon epi taxial planar device for low-noise, high-gain ampli fication, m edium -power sw itching, and ge n e ralpurpose use from dc to UHF. Process T Q L is the
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0S0433Ã
500mA
050M33Ã
2N2907
935J
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