TRANSISTOR H 1061 Search Results

TRANSISTOR H 1061 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR H 1061 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BLY89A Abstract: transistor h 1061 Transistor bly89a D 1062 transistor transistor ALY 36 transistor 1971 yl 1060 Transistor ALY c2 Text: P H I L I P S IN T E R N A T IO N A L MAINTENANCE TYPE M IE D H 7 1 1 0 0 2 b 0 0 2 7 ^ 5 1 ^•P H IN BLY89A T~33~/3 V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 13,5 V . The transistor is resistance stabilized. Every	OCR Scan	711002b BLY89A -T-33-/3 PL-25W BLY89A transistor h 1061 Transistor bly89a D 1062 transistor transistor ALY 36 transistor 1971 yl 1060 Transistor ALY c2	PDF
Untitled Abstract: No abstract text available Text: bbS3^31 002514b MS3 H A P X Philips Semiconductors N AKER PHILIPS/DISCRETE Product specification b7E D NPN 2 GHz wideband transistor DESCRIPTION c BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application in thick and thin-film	OCR Scan	002514b BFR53 0D251SD bbS3T31	PDF
y-parameter Abstract: MPS-H37 MPSH37 transistor h 1061 Text: MPS-H37 SILICON IMPN SILICON ANNULAR TRANSISTOR . . . designed for 4.5 M H 2 sound IF applications in T V receivers. • High Breakdown Voltage — B V c E O = 40 V (Min) @ lQ = 1-0 niAdc • High O utput Resistance @ 4.5 M H z — -Y o e (r e a l)	OCR Scan	MPS-H37 y-parameter MPS-H37 MPSH37 transistor h 1061	PDF
transistor h 1061 Abstract: No abstract text available Text: CSC 1061 CSC1061 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier DIM A B C D E F G H J K L M N MIN MAX 14.42 9.63 3,56 16.51 10.67 4.83 0.90 1.15 1,40 3.75 3.68 2,29 2.79 2,54 3.43 0,56 12.70 14.73 6,35 2.03 2,92 31.24 7 DEG ABSOLUTE MAXIMUM RATINGS	OCR Scan	CSC1061 transistor h 1061	PDF
Untitled Abstract: No abstract text available Text: h 7 > y X $ /Transistors FMY3 FMY3 x f c f $ ^ r '> T ^ 7 V - ^ y a . 7 7; i / $ - ; E - ; i / K P N P / N P N y ' J : l > h 7 / y ^ •f >/<— £ K 7 < /''/In ve rter Driver Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor y — >f — 5 — T	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h ^DS on Package Ordering Code 5.3 A 2w TO-218AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit	OCR Scan	O-218AA C67078-S3108-A2 flB35bG5 O-218	PDF
transistor h 1061 Abstract: CSC1061 transistor 1061 Text: CSC 1061 CSC1061 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0,90 1.15 1,40 3.75 3.88 2.29 2.79 2,54 3.43 0,56 12.70 14.73 6,35 2.03 2,92 31.24 7 DEG 14.42 9.63 3.56 A BSO LU TE M A XIM U M RATINGS	OCR Scan	CSC1061 transistor h 1061 transistor 1061	PDF
transistor 356 j Abstract: transistor 356 b Text: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h 5.3 A ^DSion Package Ordering Code 2H TO-218 AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b 5.3	OCR Scan	O-218 C67078-S3108-A2 O-218AA transistor 356 j transistor 356 b	PDF
TIS43 Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.	OCR Scan	2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent	PDF
2901J Abstract: 1072 3k2 Text: HD66300T- Horizontal Driver for TFT-Type LCD Color TV The HD66300T is a horizontal driver used for TFTtype (Thin Film Transistor) LCD color TVs. Specifi cally, it drives the drain bus signals of a TFT-type LCD panel. The H D66300T receives as input three video signals R,	OCR Scan	HD66300T--------------- HD66300T D66300T HD66300T 2901J 1072 3k2	PDF
bly87c Abstract: transistor tt 2222 yl 1060 Text: N AMER PHILIPS/DISCRETE bTE D • ttS3T31 ODSTbbb 415 H A P X BLY87C Jl V.H.F. POWER TRANSISTOR N-P-N silico n planar e pitaxial tra nsistor intended fo r use in class-A, B and C operated m obile, h.f. and v.h.f. transm itters w ith a nom inal su p p ly voltage o f 13,5 V . T h e tra nsistor is resistance sta bilize d and	OCR Scan	bb53S31 BLY87C 7Z77729 7Z77730 bly87c transistor tt 2222 yl 1060	PDF
transistor h 1061 Abstract: No abstract text available Text: ROHM CO 4ÜE LTD T Ä S B 'm D QOQbBST h 7 > y 7 $ / T ransistors 7 FM Y3 y z 2 7 - 2 ,7 • 1 *1 ■ W -f K v ri/ty ln v e rte r Driver Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor • [S/Dimensions Unit: mm 2 D HUH • F e atu re 1) A su p e r-m in im o id p a c k a g e h ouses 2	OCR Scan		PDF
C4023 Abstract: STP40N05 STP40N05FI GC286 Text: 7 cî2cî237 0 0 m 34bT T B 1? • S G T H SGS-THOMSON STP40N05 STP40N05FI üO T@ KS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP40N05 STP40N05FI ■ . ■ ■ . ■ ■ . V dss R öS on Id 50 V 50 V < 0.035 Q < 0.035 Q 40 A 23 A TYPICAL RDS(on) = 0.03 i l	OCR Scan	004b4bÂ STP40N05 STP40N05FI STP40N05 STP40N05FI D04Li47S STP40N05/FI C4023 GC286	PDF
ujt firing circuits of scr Abstract: UJT APPLICATION scr firing circuit UJT triggering circuit ujt timer CIRCUIT applications of ujt unijunction application note ujt free Complementary UJT D5K1 ujt transistor Text: Complementary Unijunction Transistor □ e1 D5K1 1 C O M PLEM EN TA R Y U N IJU N C T IO N T h e G e n e ra l E le c tr ic D 5K 1 C o m p le m e n ta ry U n iju n c tio n T r a n s is t o r is a silic o n p la n a r , m o n o lith ic in te g r a te d c ir c u it. I t h a s u n iju n c tio n c h a r a c te r is tic s w ith	OCR Scan	-15aC I0V01TI ujt firing circuits of scr UJT APPLICATION scr firing circuit UJT triggering circuit ujt timer CIRCUIT applications of ujt unijunction application note ujt free Complementary UJT D5K1 ujt transistor	PDF

Mosfet FTR 03-E Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337 Text: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP	OCR Scan	2SK1976 2SK2095 2SK2176 O-220FP 2SA785 2SA790 2SA790M 2SA806 Mosfet FTR 03-E mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337	PDF
transistor tt 2222 Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060 Text: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and	OCR Scan	711002b BLY87C transistor tt 2222 Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060	PDF
3D24N2Y Abstract: transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N Text: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N O F U N K U N D FE R N SE H E N AUSGABE: M m ri r a d i o - t e i e v i s i o n l 1 9 8 4 14-16 S e ite 1 - 1 2 Mitteilung aus dem VSB RFT Industrievertrieb R.u.F. Leipzig Serviceinformationen zuin neuen Auto-Stereo-Kassettenabspielgerät	OCR Scan	Ge1012 3D24N2Y transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N	PDF
Untitled Abstract: No abstract text available Text: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran	OCR Scan	001420b BLY93A r3774	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF
BFG55A Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60	PDF
TEA2029 Abstract: TEA 2164 Text: SGS-THOMSON TEA2164 SW ITCH M O DE PO W ER SUPPLY PRIM ARY C IR C U IT • POSITIVE AND NEGATIVE O UTPUT CUR RENT UP TO 1,2A AND - 1,7A ■ A TW O LEVEL CO LLECTOR CURRENT LIMI TATION . CO M PLETE TURN OFF AFTER LONG DURA TION OVERLOADS ■ UNDER AND OVER VOLTAGE LOCK-OUT	OCR Scan	TEA2164 E89TEA2164-22 TEA2029 TEA 2164	PDF
BLY93A Abstract: D 1062 transistor Trimmer 10-60 pf IEC134 transistor ao yl 1060 Text: N AMER PHILIPS/DISCRETE 86D GbE D 01968 D Bi b 353^31 001450t. 2 T^~23-f( " “ BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r use inclass-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 28 V . The transistor is resistance stabilized. Every tran	OCR Scan	001450t. BLY93A OT-56. Tmb-25 BLY93A D 1062 transistor Trimmer 10-60 pf IEC134 transistor ao yl 1060	PDF
LS 2027 audio amp Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3	OCR Scan		PDF
UJT 2N2646 specification Abstract: UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1 Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can	OCR Scan	2N489-494â 2N2646-47â 0047/iF 100kn UJT 2N2646 specification UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1	PDF

TRANSISTOR H 1061 Search Results

TRANSISTOR H 1061 Result Highlights (5)

TRANSISTOR H 1061 Datasheets Context Search

BLY89A

Untitled

y-parameter

transistor h 1061

Untitled

Untitled

transistor h 1061

transistor 356 j

TIS43

2901J

bly87c

transistor h 1061

C4023

ujt firing circuits of scr

Mosfet FTR 03-E

transistor tt 2222

3D24N2Y

Untitled

transistor f6 13003

BFG55A

TEA2029

BLY93A

LS 2027 audio amp

UJT 2N2646 specification