Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR H6C Search Results

    TRANSISTOR H6C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR H6C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    transistor H6C

    Abstract: No abstract text available
    Text: TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 200 to 500 IC = 0.2 A


    Original     		TPC6902 transistor H6C PDF

    transistor H6C

    Abstract: TPC6902
    Text: TPC6902 TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6902 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm NPN and PNP transistors are mounted on a compact and slim package. High DC current gain : NPN hFE = 200 to 500 IC = 0.2 A


    Original     		TPC6902 transistor H6C TPC6902 PDF

    transistor 6c9

    Abstract: transistor marking 6c9 102 6f dk transistor 6H MARKING diode D9 DG transistor marking 6H
    Text: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U DK: GH;><IF: D;B : F>H/ , + L . X U 2 AHF6 ADK <6H : 8 =6F<: V !0 8M[^Rh .) O R =L"`_#%^Rh )',.) " *2 _< Q X%dia U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U - 7 ;F: : A


    Original     		IPI50R350CP 696EH transistor 6c9 transistor marking 6c9 102 6f dk transistor 6H MARKING diode D9 DG transistor marking 6H PDF

    Untitled

    Abstract: No abstract text available
    Text: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U฀ DK:GH฀;><IF:฀D;฀B:F>H฀/,+฀L฀.X U฀2AHF6฀ADK฀<6H:฀8=6F<: V !0฀8M[^Rh .) O R =L"`_#%^Rh )',.)  *2 _< Q X%dia U฀"LHF:B:฀9J 9H฀F6H:9 U฀%><=฀E:6@฀8IFF:CH฀86E67>A>HM


    Original     		IPI50R350CP 86E67 688DF9 696EH PDF

    marking 6d

    Abstract: IPP147N12N
    Text: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )*( K R  - @ ?>2 I ),&/ Z" -. I; 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB144N12N3 IPI147N12N3 IPP147N12N3 marking 6d IPP147N12N PDF

    marking 9D

    Abstract: sd marking 8H IPP06CN10N PG-TO220-3 A6c DIODE
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )( K R  - @ ?>2 I.)     .&* Z" I; )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N 8976BF6 marking 9D sd marking 8H PG-TO220-3 A6c DIODE PDF

    9926C

    Abstract: IPI037N06L3 s4si IPP037N06L3 G
    Text: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD I9   . K +&, Z" 1(


    Original     		IPB034N06L3 IPI037N06L3 IPP037N06L3 76BF6? 766substances. 9926C s4si IPP037N06L3 G PDF

    IPP05CN10N

    Abstract: No abstract text available
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; )( K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N 8976BF6 PDF

    marking 6d

    Abstract: IPD110N12N3 G
    Text: IPD110N12N3 G IPS110N12N3 G "%&$!"#TM3Power-Transistor Features Product Summary R 492 ?6= ?@ C>2 =6G6= V ;I *( K R ;I"\[#$>2 I ) Z" I; /- 7 R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '  R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[# R   U @ A6C2 E:?8 E6>A6C2 E


    Original     		IPD110N12N3 IPS110N12N3 8976BF6 marking 6d IPD110N12N3 G PDF

    IPD110N12N3 G

    Abstract: No abstract text available
    Text: IPD110N12N3 G IPS110N12N3 G TM3Power-Transistor Features Product Summary R฀ 492?6=฀?@C>2=฀=6G6= V ;I *( K R ;I"\[#$>2I฀ ) Z I; /- 7 R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀!)' R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#


    Original     		IPD110N12N3 IPS110N12N3 492C86à E2C86Eà E96CH IPD110N12N3 G PDF

    IPP054NE8N

    Abstract: FX23L-100S-0.5SV
    Text: IPB051NE8N G IPI05CNE8N G IPP054NE8N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; 0- K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB051NE8N IPI05CNE8N IPP054NE8N 8976BF6 FX23L-100S-0.5SV PDF

    marking J6c

    Abstract: marking 6C marking 09D marking 6c 7
    Text: IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I 0- K R  - @ ?>2 I.)     0&* Z" I; 1- 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB08CNE8N IPI08CNE8N IPP08CNE8N marking J6c marking 6C marking 09D marking 6c 7 PDF

    marking 6d

    Abstract: IPP04CN10N G diode 6e
    Text: IPB04CN10N G IPI04CN10N G IPP04CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; )( K +&1 Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB04CN10N IPI04CN10N IPP04CN10N marking 6d IPP04CN10N G diode 6e PDF

    IPP037N06L3 G

    Abstract: No abstract text available
    Text: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G  3 Power-Transistor Product Summary Features V 9I . K R฀#562=฀7@C฀9:89฀7C6BF6?4J฀DH:E49:?8฀2?5฀DJ?4 ฀C64 R -@?>2I฀-' +&, Z R฀ AE:>:K65฀E649?@=@8J฀7@C฀ ฀4@?G6CE6CD


    Original     		IPB034N06L3 IPI037N06L3 IPP037N06L3 492C86à E6DE65 E2C86Eà IPP037N06L3 G PDF

    DIODE 5c2 5t

    Abstract: No abstract text available
    Text: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G  3 Power-Transistor Product Summary Features R฀ 492?6=฀?@C>2=฀=6G6= R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀! ' V ;I )*( K R -@?>2I฀ ),&/ Z I; -. 7 R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#


    Original     		IPB144N12N3 IPI147N12N3 IPP147N12N3 492C86à E2C86Eà DIODE 5c2 5t PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB049N06L3 G IPP052N06L3 G Jf]R  3 Power-Transistor Product Summary Features R฀#562=฀7@C฀9:89฀7C6BF6?4J฀DH:E49:?8฀2?5฀DJ?4 ฀C64 R฀ AE:>:K65฀E649?@=@8J฀7@C฀ ฀4@?G6CE6CD V 9I . K R -@?>2I฀-' ,&/ Z I9 0( 6


    Original     		IPB049N06L3 IPP052N06L3 492C86à E6DE65 E2C86Eà PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB081N06L3 G IPP084N06L3 G Jf]R  3 Power-Transistor Product Summary Features R฀#562=฀7@C฀9:89฀7C6BF6?4J฀DH:E49:?8฀2?5฀DJ?4 ฀C64 R฀ AE:>:K65฀E649?@=@8J฀7@C฀ ฀4@?G6CE6CD V 9I . K R -@?>2I฀-' 0&) Z I9 -( 6


    Original     		IPB081N06L3 IPP084N06L3 492C86à E6DE65 E2C86Eà PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G  2 Power-Transistor Product Summary Features R฀ 492?6=฀?@C>2=฀=6G6= R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀! ' V ;I )( K R -@?>2I฀.)฀ -&) Z I; )( 7 R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N 492C86à E2C86Eà PDF

    AF41

    Abstract: diode 6e marking 8FC diode 6d 50 56E MARKING s4si
    Text: IPB049N06L3 G IPP052N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD   I9 . K ,&/ Z" 0( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 


    Original     		IPB049N06L3 IPP052N06L3 AF41 diode 6e marking 8FC diode 6d 50 56E MARKING s4si PDF

    marking xd diode

    Abstract: e866 marking 8fc marking J6c s4si
    Text: IPB081N06L3 G IPP084N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD   I9 . K 0&) Z" -( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 


    Original     		IPB081N06L3 IPP084N06L3 76BF6? marking xd diode e866 marking 8fc marking J6c s4si PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB04CN10N G IPI04CN10N G IPP04CN10N G  2 Power-Transistor Product Summary Features R฀ 492?6=฀?@C>2=฀=6G6= R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀! ' V ;I )( K R -@?>2I฀.)฀ +&1 Z I; )( 7 R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#


    Original     		IPB04CN10N IPI04CN10N IPP04CN10N 492C86à E2C86Eà PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 PDF

    SMD TRANSISTOR H2A NPN

    Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
    Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF