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    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK565-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channei enhancement mode logic level fleld-effect power transistor in a


    OCR Scan     		PDF BUK565-200A SQT404

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK543-60A/B Logic level _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack


    OCR Scan     		PDF BUK543-60A/B BUK543

    transistor 746

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION N-channe! enhancement mode logic level fietd-effect power transistor in a plastic full-pack


    OCR Scan     		PDF BUK545-60A/B BUK545 transistor 746

    lg diode 923

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.


    OCR Scan     		PDF BUK582- OT223 BUK582-100A lg diode 923

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fleld-effect power transistor in a plastic envelope suitable for surface mount applications.


    OCR Scan     		PDF BUK581-60A OT223

    diode T-71

    Abstract: BUK657-400B
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


    OCR Scan     		PDF BUK657-400B T0220AB BUK657-400B diode T-71

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version of PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable


    OCR Scan     		PDF PHP1N60E PHX1N60E PINNING-SOT186A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable


    OCR Scan     		PDF PHP10N40E PHX5N40E OT186A

    2iy transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


    OCR Scan     		PDF BUK9628-55 SQT404 2iy transistor

    BUK416-1OOAE

    Abstract: BUK416-100BE BUK416-100AE transistor 136 138 140
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK416-100AE/BE BUK416 -100AE -100BE OT227B BUK416-1OOAE/BE BUK416-1OOAE BUK416-100BE BUK416-100AE transistor 136 138 140

    diode sy 345

    Abstract: T0220AB
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP3055E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and


    OCR Scan     		PDF PHP3055E T0220AB 100A4is; diode sy 345 T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor isolated version of PHP3N50E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable


    OCR Scan     		PDF PHP3N50E PHX2N50E OT186A

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK455-200A/B BUK455 -200A -200B T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


    OCR Scan     		PDF PHP3055E T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK452-60A/B BUK452 T0220AB

    BUK426-800A

    Abstract: No abstract text available
    Text: Philips Com ponents Data sheet status Product specification BUK426-800A/B PowerMOS transistor date of issue March 1991 PHILIPS INTERNATIONAL SbE D 1_ I GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK426-800A/B BUK426 -800B T-39-11 7110fl5tj BUK426-800A

    c 879 transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification RowerMOS transistor Logic level FET GENERAL DESCRIPTION BUK565-100A QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.


    OCR Scan     		PDF BUK565- BUK565-100A c 879 transistor

    BUK553-100A

    Abstract: BUK553-100B T0220AB L013 fet junction transistor
    Text: b5E D PHILIPS INTERNATIONAL • 711002b 00bMS31 313 ■ PHIN Product Specification Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF 7110fi2b 00kMS31 BUK553-100A/B T0220AB BUK553 -100A -100B BUK553-100A BUK553-100B L013 fet junction transistor

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK457-400B T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode fieid-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


    OCR Scan     		PDF PHP4N40E T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK456-200A/B BUK456 -200A -200B T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP4N40E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, last switching and


    OCR Scan     		PDF PHP4N40E T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK482-200A QUICK REFERENCE DATA N-channei enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking


    OCR Scan     		PDF BUK482-200A OT223

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device Is intended for use in automotive and general purpose


    OCR Scan     		PDF BUK556-60H T0220AB