Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR IRF520 Search Results

    TRANSISTOR IRF520 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR IRF520 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Power MOSFETs Application Notes irf520

    Abstract: IRF520 application note irf520 mosfet IRF520 TB334
    Text: IRF520 Data Sheet January 2002 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET Features • 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF520 TA09594. Power MOSFETs Application Notes irf520 IRF520 application note irf520 mosfet IRF520 TB334

    transistor IRF520

    Abstract: irf520 mosfet 37ag transistor equivalent irf520 IRF520 TB334
    Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET 1574.4 Features • 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF520 TA09594. transistor IRF520 irf520 mosfet 37ag transistor equivalent irf520 IRF520 TB334

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    Untitled

    Abstract: No abstract text available
    Text:  search PRODUCT INFO TinkerKit Mosfet Module Code: T010020 This module switches a high current load using a high power transistor. Unlike a mechanical relay, this is capable of high speed switching for use with PWM. Input: This module lets you control devices operating at a maximun of


    Original     		PDF T010020 24VDC IRF520

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    irf52 0

    Abstract: No abstract text available
    Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()


    Original     		PDF IRF520 IRF52 O220AB IRF520 irf52 0

    TP10N10E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF520 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TM O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid


    OCR Scan     		PDF IRF520 b3b725H TP10N10E

    fet ba7 transistor

    Abstract: k106 transistor transistor 9651 fet ba7 IRF520 IRF521 k 106 40411 transistor D84CK2 transistor 40411
    Text: IRF520,521 D84CL2.K2 ßOTlRi°IMäg IFHT FIELD EFFECT POWER TRANSISTOR 8 AMPERES 1100, 60 VOLTS RlDS ON = 0.3 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRF520 D84CL2 00A///sec, fet ba7 transistor k106 transistor transistor 9651 fet ba7 IRF521 k 106 40411 transistor D84CK2 transistor 40411

    Untitled

    Abstract: No abstract text available
    Text: /= T SGS-THOMSON * 71 HD g»I[Lli(gTIS iD(gi IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils SCHEMATIC DIAGRAM


    OCR Scan     		PDF 71TMHD IRF520

    Untitled

    Abstract: No abstract text available
    Text: 7 SGS-THOMSON */ =7 # M MI[Li ïrGMO(gS IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 9 5 x9 5 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox


    OCR Scan     		PDF IRF520 28x30 16x18 MC-0071 250/jA

    transistor IRF520

    Abstract: IRF520 mos die 312c IRF52
    Text: 3QE D 7 T 2 C 237 0D30130 5 • Q S-THOMSON SGS-THOMSON IRF520 CHIP Ey N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 9 5 x9 5 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:


    OCR Scan     		PDF 0D30130 IRF520 95x95 28x30 16x18 651CHARACTERISTICS transistor IRF520 mos die 312c IRF52

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    IRF540 n-channel MOSFET BATTERY CHARGER

    Abstract: 1rf530 IRF540 irf520 comparison UNITRODE applications handbook UNITRODE product and applications handbook H. Dean Venable schematic diagram 72vdc battery charger 48V to 12V buck transformer RF520 HEXFET Power MOSFET designer manual
    Text: UNITRODE CORPORATION U-167 UC3578 TELECOM BUCK CONVERTER EVALUATION BOARD By Mark Dennis Unitrode Corporation ABSTRACT This application note describes a simple solution for a buck converter operating from an input of 15V to 72V with an N channel MOSFET switching transistor. Using this switch configuration requires a gate potential higher than the input


    OCR Scan     		PDF U-167 UC3578 UC3S78 48Vions Q1/95 IRF540 n-channel MOSFET BATTERY CHARGER 1rf530 IRF540 irf520 comparison UNITRODE applications handbook UNITRODE product and applications handbook H. Dean Venable schematic diagram 72vdc battery charger 48V to 12V buck transformer RF520 HEXFET Power MOSFET designer manual

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    irf 520

    Abstract: irf 44 n TRANSISTOR n 522 TO 521 MH irf 522 transistor IRF 522 irf521 Tc 521 A
    Text: IRF 520/FI-521/FI IRF 522/FI-523/FI / = 7 SGS-THOMSON «lisimiigretMoei N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S on IRF520 IRF520FI 100 V 100 V 0.27 n 0.27 fi " 9.2 A 7 A IRF521 IRF521FI 80 V 80 V 0.27 fi 0.27 fi 9.2 A 7 A IRF522


    OCR Scan     		PDF 520/FI-521/FI 522/FI-523/FI IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI IRF523 IRF523FI irf 520 irf 44 n TRANSISTOR n 522 TO 521 MH irf 522 transistor IRF 522 Tc 521 A

    Untitled

    Abstract: No abstract text available
    Text: IRF520 Semiconductor D ata S h eet June 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET • 9.2A, 100V Ordering Information • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF IRF520 O-220AB TB334 TA09594.

    TO 521 MH

    Abstract: transistor IRF520 TT220 schematic diagram UPS 600 Power structure irf 44 n 56-A IRF520 application note IRF 520
    Text: / = T IRF 520/FI-521/FI IRF 522/FI-523/FI S G S -T H O M S O N H 0»H[L[i gï^(Q RS0 i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^ D S(on) IRF520 IRF520FI 100 V 100 V 0.27 ß 0.27 0 9.2 A 7 A IRF521 IRF521FI 80 V 80 V 0.27 0 0.27 n 9.2 A


    OCR Scan     		PDF 520/FI-521/FI 522/FI-523/FI IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI IRF523 IRF523FI TO 521 MH transistor IRF520 TT220 schematic diagram UPS 600 Power structure irf 44 n 56-A IRF520 application note IRF 520

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    jrf 520

    Abstract: irf 44 n schematic diagram UPS 600 Power structure IRF520 irf5205 IRF521 IRF520 application note IRF 520 TRANSISTOR n 522 IRF522
    Text: 3QE P /S T J • 7cjScjg37 QQSTTb? 3 ■ S G S -T H O M S O N ^ D œ iŒ ig T O iO ig i 6^ S-THOMSON TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V Dss ^D S on IRF520 IRF520FI IRF521 IRF521FI 100 100 80 80 0.27 Q 0.27 n Id ' 9.2 A 7 A IRF522 IRF522FI


    OCR Scan     		PDF 520/FI-521 522/FI-523/FI IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI 1RF523 IRF523FI jrf 520 irf 44 n schematic diagram UPS 600 Power structure irf5205 IRF520 application note IRF 520 TRANSISTOR n 522

    transistor equivalent irf510

    Abstract: 966a transistor equivalent irf740 irf460a HEXFET III - A new Generation of Power MOSFETs fet irf840 transistor equivalent irf520 IRF83Q AN949A High frequency switching AN-966A
    Text: APPLICATION NOTE 966A HEXFET III: A New Generation of Power MOSFETs H EXFET is a tra d e m a rk o f In te rn a tio n a l R ectifie r by D. Grant Introduction International Rectifier has introduc­ ed a new third-generation of HEXFET power MOSFETs, the HEXFET III.


    OCR Scan     		PDF

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF

    rfp12n10

    Abstract: No abstract text available
    Text: HARRIS SEHICOND SECTOR böE D • 4302271 00S11G0 777 ■ HAFRFR1S UU PCF12N10W P^jF12N1 OEJ S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Die Features • HAS Passivated W • Contact Metallization - Gate and Source - Aluminum • Drain - Tri-Metal Al-Ti-Ni


    OCR Scan     		PDF 00S11G0 PCF12N10W jF12N1 Mil-Std-750, IRF120 IRF520 IRFR120 IRFF120 RFM12N10 RFP12N10 rfp12n10