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    TRANSISTOR J42 Search Results

    TRANSISTOR J42 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J42 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD443

    Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power


    Original     		PDF BLW77 BD443 MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf

    2sa1943

    Abstract: j4215 sc5200 transistor
    Text: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = -17A. High Power Dissipation : 150watts.


    Original     		PDF 2SA1943/FJL4215 150watts. 30MHz. -250V SC5200/FJL4315. 2SA1962/FJA4213 FJP1943 O220F FJPF1943 O-264 2sa1943 j4215 sc5200 transistor

    TRANSISTOR j412

    Abstract: No abstract text available
    Text: SERIES COMMERCIAL TO-5 RELAYS 712 DPDT SERIES DESIGNATION RELAY TYPE 712 DPDT basic relay 712D DPDT relay with internal diode for coil transient suppression 712TN DPDT relay with internal transistor driver and coil transient suppression diode INTERNAL CONSTRUCTION


    Original     		PDF 712TN ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, TRANSISTOR j412

    TRANSISTOR j412

    Abstract: 712D-5 J412 5 pin 30 amp relay 712-12 712D-26 TELEDYNE RELAYS j412 dpdt relay ER412D J411
    Text: SERIES COMMERCIAL TO-5 RELAYS 712 DPDT SERIES DESIGNATION 712 RELAY TYPE DPDT basic relay 712D DPDT relay with internal diode for coil transient suppression 712TN DPDT relay with internal transistor driver and coil transient suppression diode INTERNAL CONSTRUCTION


    Original     		PDF 712TN ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, TRANSISTOR j412 712D-5 J412 5 pin 30 amp relay 712-12 712D-26 TELEDYNE RELAYS j412 dpdt relay ER412D J411

    j4213-o

    Abstract: j4213 a1962 J4213O J4213R 2SA1962O 2SA1962 2SA1962OTU A1962R FJA4213
    Text: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -17A High Power Dissipation : 130watts High Frequency : 30MHz.


    Original     		PDF 2SA1962/FJA4213 130watts 30MHz. -250V 2SC5242/FJA4313. 2SA1943/FJL4215 FJP1943 O220F FJPF1943 2SA1962/FJA4213 j4213-o j4213 a1962 J4213O J4213R 2SA1962O 2SA1962 2SA1962OTU A1962R FJA4213

    j4215

    Abstract: 2sa1943 transistor A1943 2sa1943 amplifier power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 2sa1943 Spice Models 2sc5200 amplifier J4215O 2sC5200, 2SA1943
    Text: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -17A. High Power Dissipation : 150watts. High Frequency : 30MHz.


    Original     		PDF 2SA1943/FJL4215 150watts. 30MHz. -250V 2SC5200/FJL4315. 2SA1962/FJA4213 FJP1943 O220F FJPF1943 O-264 j4215 2sa1943 transistor A1943 2sa1943 amplifier power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 2sa1943 Spice Models 2sc5200 amplifier J4215O 2sC5200, 2SA1943

    j4215

    Abstract: A1943 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 transistor J4215O 2SA1943 J4215R 2sa1943 amplifier 2sC5200, 2SA1943 spice model 2SC5200
    Text: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 150watts. High Frequency : 30MHz.


    Original     		PDF 2SA1943/FJL4215 150watts. 30MHz. -230V 2SC5200/FJL4315. 2SA1962/FJA4213 FJP1943 O220F FJPF1943 O-264 j4215 A1943 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 transistor J4215O 2SA1943 J4215R 2sa1943 amplifier 2sC5200, 2SA1943 spice model 2SC5200

    j4213-o

    Abstract: a1962 j4213 a1962o 2SA1962OTU 2SA1962RTU FJP1943 FJPF1943 transistor 2sc5242
    Text: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz.


    Original     		PDF 2SA1962/FJA4213 130watts 30MHz. -230V 2SC5242/FJA4313. 2SA1943/FJL4215 FJP1943 O220F FJPF1943 2SA1962/FJA4213 j4213-o a1962 j4213 a1962o 2SA1962OTU 2SA1962RTU FJP1943 FJPF1943 transistor 2sc5242

    J412

    Abstract: TRANSISTOR j412 J114 453124 dpdt relay ER412D 732D rf311 TELEDYNE RELAYS 732-5 RELAYS
    Text: SERIES COMMERCIAL SENSITIVE TO-5 RELAYS 732 DPDT SERIES DESIGNATION RELAY TYPE 732 DPDT basic relay 732D DPDT relay with internal diode for coil transient suppression 732TN DPDT relay with internal transistor driver and coil transient suppression diode INTERNAL CONSTRUCTION


    Original     		PDF 732TN ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, J412 TRANSISTOR j412 J114 453124 dpdt relay ER412D 732D rf311 TELEDYNE RELAYS 732-5 RELAYS

    j4213-o

    Abstract: j4213 a1962 transistor b 1560
    Text: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz.


    Original     		PDF 2SA1962/FJA4213 130watts 30MHz. -230V 2SC5242/FJA4313. 2SA1943/FJL4215 FJP1943 O220F FJPF1943 j4213-o j4213 a1962 transistor b 1560

    j4213

    Abstract: j4213-o
    Text: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = -17A High Power Dissipation : 130watts High Frequency : 30MHz.


    Original     		PDF 2SA1962/FJA4213 130watts 30MHz. -250V SC5242/FJA4313. 2SA1943/FJL4215 FJP1943 O220F FJPF1943 j4213 j4213-o

    j4213

    Abstract: j4213-o
    Text: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Fequency : 30MHz.


    Original     		PDF 2SA1962/FJA4213 130watts 30MHz. -230V 2SC5242/FJA4313. 2SA1943/FJL4215 FJP1943 O220F FJPF1943 j4213 j4213-o

    j4215

    Abstract: 2sa1943 2sc5200 amplifier circuit amplifier design 2SA1943 2sC5200, 2SA1943 A1943 2sa1943 transistor 2SC5200
    Text: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 150watts. High Fequency : 30MHz.


    Original     		PDF 2SA1943/FJL4215 150watts. 30MHz. -230V 2SC5200/FJL4315. 2SA1962/FJA4213 FJP1943 O220F FJPF1943 j4215 2sa1943 2sc5200 amplifier circuit amplifier design 2SA1943 2sC5200, 2SA1943 A1943 2sa1943 transistor 2SC5200

    motorola MRF559

    Abstract: mrf559 transistor mrf559d J368 mw 137 MRF559 transistor J306 mrf559 v J9018 j353 transistor
    Text: MOTOROLA Order this document by MRF559/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF559 . . . designed for UHF linear and large–signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts


    Original     		PDF MRF559/D MRF559 motorola MRF559 mrf559 transistor mrf559d J368 mw 137 MRF559 transistor J306 mrf559 v J9018 j353 transistor

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    J423

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA M J423 H igh-V oltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS . . . designed for m e d iu m -to -h ig h voltage inverters, converters, regulators and


    OCR Scan     		PDF MJ423/D O-204AA J423

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    BLW77

    Abstract: neutralization push-pull philips Trimmer 60 pf
    Text: PHILIPS bSE » INTERNATIONAL • 7110öSb D0b3277 SSO IPHIN BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­


    OCR Scan     		PDF D0b3277 BLW77 7110flSh 7Z77473 7Z77475 BLW77 neutralization push-pull philips Trimmer 60 pf

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE D b b S B ' m DDETBflD DM2 * A P X BLW77 J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­


    OCR Scan     		PDF BLW77 28The

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor . . . designed for UHF linear and large-signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts Minimum Gain = 8.0 dB


    OCR Scan     		PDF

    j353

    Abstract: transistor j353 j353 transistor MRF559 TRANSISTOR J408 j361 MHW808
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency TVansistor . . . designed for UHF linear and large-signal amplifier applications. • 0.5 W, 870 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON Specified 12.5 Volt, 870 MHz Characteristics —


    OCR Scan     		PDF MHW808 IS22I MRF559 j353 transistor j353 j353 transistor TRANSISTOR J408 j361 MHW808

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp