MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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NEC semiconductor
Abstract: 2sd2217 transistor PT 4500 C11531E NEC C11531E
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching.
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2SD2217
2SD2217
C11531E)
NEC semiconductor
transistor PT 4500
C11531E
NEC C11531E
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2SC4553
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a
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2SC4553
2SC4553
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BUK555-100A
Abstract: wdss-100
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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BUK555-100A/B
BUK555
-100A
-100B
BUK555-100A/B
BUK555-100A
wdss-100
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transistor 746
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION N-channe! enhancement mode logic level fietd-effect power transistor in a plastic full-pack
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BUK545-60A/B
BUK545
transistor 746
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PR37 RESISTOR
Abstract: PR37 resistors
Text: N AUER PHILIPS/DISCRETE b^E » bbS3^31 □□2'ISIS D72 BLW96 IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, A B and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents
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BLW96
PR37 RESISTOR
PR37 resistors
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE fc^E D bbsa^i dos^ m tsd i IAPX BLW60C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized
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BLW60C
nsforFigs16and17:
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast
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PHX1N60
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK563-100A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface
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BUK563-100A
SQT404
BUK563-100A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION PHX5N40E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode PARAMETER field-effect power transistor in a full pack, plastic envelope featuring high
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PHP10N40E
PHX5N40E
OT186A
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S10080
Abstract: TJT-120
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK556-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK556-60H
T0220AB
BUK556-60H
S10080
TJT-120
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effeet power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology
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BUK9624-55
OT404
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PDF
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BUK555-60H
Abstract: T0220AB
Text: Product specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Automotive applications, Switched
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BUK555-60H
T0220AB
T0220AB;
T0220
BUK555-60H
T0220AB
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GS 069 LF
Abstract: BUK437-600B IP Semiconductors A/blf 187
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK437-600B
GS 069 LF
BUK437-600B
IP Semiconductors A/blf 187
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transistor pnp 30V 2A 1W
Abstract: 2SA928 transistor 2SA928 5V 2A PNP transistor 500ma 30v
Text: 2SA928 PNP SILICON TRANSISTOR DESCRIPTION TO-92B 2SA928 is PNP silicon planar transistor dedesigned for audio power amplifier. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation
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2SA928
O-92B
500mA
transistor pnp 30V 2A 1W
transistor 2SA928
5V 2A
PNP transistor 500ma 30v
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE » E9 711GÖEb 0Db431b Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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0Db431b
T0220AB
BUK655-500B
711002b
aab432D
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PHB65N06T
Abstract: T404
Text: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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PHB65N06T
OT404
PHB65N06T
T404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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BUK463-60A
SQT404
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transistor 5d smd
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level fleld-effect power transistor In a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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BUK7606-55A
SQT404
transistor 5d smd
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k 246 transistor fet
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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BUK7675-55
k 246 transistor fet
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BUK454-400B
Abstract: BUK454 BUK454-400A T0220AB
Text: BUK454-400A BUK454-400B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK454-400A
BUK454-400B
BUK454
-400A
-400B
T0220AB;
M89-1159/RC
BUK454-400B
BUK454-400A
T0220AB
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ld25 cv
Abstract: BUK565-60H
Text: Product specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK565-60H
OT404
ld25 cv
BUK565-60H
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK582-60A
OT223
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