2SC1623K
Abstract: SOT-23-hg 2SC1623K-P sot-23 Marking l7 TRANSISTOR NPN 60V 600 MARKING CODE
Text: 2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200 Typ , VCE=6V, IC=1mA. High Voltage:VCEO=50V. A L 3 3 C B Top View
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2SC1623K
OT-23
2SC1623K-P
2SC1623K-Y
2SC1623K-G
2SC1623K-B
28-Jan-2011
2SC1623K
SOT-23-hg
2SC1623K-P
sot-23 Marking l7
TRANSISTOR NPN 60V
600 MARKING CODE
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VHB40-12F5
Abstract: No abstract text available
Text: VHB40-12F5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The VHB40-12F5 is Designed for Class C Amplifier Applications in VHF Mobile Radios. PACKAGE STYLE .500 6L FLG 3 2x Ø N FU LL R D 2 B MAXIMUM RATINGS E .725/18,42 F G M K H 5.0 A 36 V VCBO A 3 • PG = 9.5 dB Typ. at 40 W /175 MHz
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VHB40-12F5
VHB40-12F5
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2SC2904
Abstract: 2sc2904 TRANSISTOR transistor 835 H22A
Text: 2SC2904 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz
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2SC2904
2SC2904
2sc2904 TRANSISTOR
transistor 835
H22A
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MRF644
Abstract: No abstract text available
Text: MRF644 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF644 is a gold metallized RF power transistor designed for 12.5 V Class-C applications in 450-513 MHz frequency range. PACKAGE STYLE .500 6L FLG A C FEATURES: E • Internal Input Matching Network
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MRF644
MRF644
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2SA812K
Abstract: sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135
Text: 2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. VCE = -6V, IC = -1mA
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2SA812K
2SC1623K
OT-23
-100uA
100mA,
-10mA
01-June-2002
2SA812K
sot-23 Marking M6
M6 SOT23-3
marking of m7 diodes
Diode marking m7
M6 Marking pnp
m6 marking transistor sot-23
M6 transistor
TRANSISTOR K 135
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Untitled
Abstract: No abstract text available
Text: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System
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TVV030
TVV030
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TVV030
Abstract: ASI10660
Text: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Common Emitter • PG = 6.0 dB at 30 W/225 MHz • Omnigold Metalization System
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TVV030
TVV030
ASI10660
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sd1441
Abstract: SD-1441
Text: SD1441 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1441 is a12.5 V epitaxial silicon NPN plannar transistor. Designed primarily for VHF communication in the 175 MHz frequency. PACKAGE STYLE .500 6L FLG A C FEATURES: 1 3 2x Ø N FULL R • 175 MHz 12.5 V
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SD1441
SD1441
SD-1441
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2SC2782
Abstract: NPN 2SC2782 transistor 2sc2782
Text: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V
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2SC2782
2SC2782
to175
NPN 2SC2782
transistor 2sc2782
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BLV25
Abstract: No abstract text available
Text: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 1 2 2x Ø N FULL R D FEATURES: 3 • 28 V operation • PG = 10 dB at 175 W/108 MHz
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BLV25
BLV25
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BLV25
Abstract: No abstract text available
Text: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 2 1 2x Ø N FU LL R D FEATURES: 4 3 • 28 V operation • PG = 1.0 dB at 175 W/108 MHz
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BLV25
BLV25
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ASI10589
Abstract: FMB175
Text: FMB175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB175 is a 28 V silicon NPN power transistor designed primarily for FM broadcast transmitters. Diffused emitter ballast provides high VSWR capability under rated operation conditions. PACKAGE STYLE .500 6L FLG
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FMB175
FMB175
ASI10589
ASI10589
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TCA150
Abstract: No abstract text available
Text: 7 2 9 4 6 2 1 POWEREX INC D E § 7 B cl 4t,21 D0QE171 y / jp iA M n E r* ^ V V M Ec fflE A 3 f 7^ 33 JS ~ " D66EV Fast Switching Single Darlington Transistor Module D66DV Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 50 Amperes
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D0QE171
D66DV
D66EV
D66DV,
Amperes/500-
000B17L
TCA150
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3576 transistor
Abstract: SNA-186
Text: SNA-186 DC-8GHz Cascadable GaAs HBT MMIC Amp October, 1995 66 Plastic Package Features - Patented GaAs HBT Technology - Cascadable 50-0hm -1.8:1 VSWR - 12dB Gain, +26dBm TOIP Operates from Single Supply • Low Cost Surface Mount Plastic Package Description
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SNA-186
50-0hm
26dBm
Microdevices1SNA-186
13dBm
3576 transistor
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0118 transistor
Abstract: K 192 A transistor dual transistor sot le50pa SOT-26 01 MARKING CODE Marking sy sot TRANSISTOR marking k2 dual
Text: Central CIMD6A Sem iconductor Corp. SURFACE MOUNT DUAL COMPLEMENTARY SILICON DIGITAL TRANSISTORS 50V, 100mA DESCRIPTION: The Central Semiconductor CIMD6A is a Dual Complementary Digital Transistor in a SOT-26 surface mount package, designed for switching
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100mA
OT-26
13-November
OT-26
0118 transistor
K 192 A transistor
dual transistor sot
le50pa
SOT-26
01 MARKING CODE
Marking sy sot
TRANSISTOR marking k2 dual
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ULBM45
Abstract: ASI10685
Text: ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is a gold metallized RF power transistor designed for 12.5 V class-C UHF communication applications. The device utilizes emitter ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG
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ULBM45
ULBM45
ASI10685
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VHB125-28
Abstract: ASI10731 j105 transistor
Text: VHB125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB125-28 is NPN RF power transistor designed primarily for VHF communications. It utilizes Emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .500 6L FLG FEATURES: C A
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VHB125-28
VHB125-28
ASI10731
j105 transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 D esigner’s Data Sheet SWITCHMODE™ NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific s ta te -o f-th e -a rt die designed for
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MJE18009/D
JF18009
MJE/MJF18009
221D-02
O-220
E69369
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ULBM25
Abstract: ASI10683
Text: ULBM25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM25 is a gold metallized RF power transistor designed for 12.5 Class-C applications in 450-513 MHz frequency range. It utilizes Emitter Ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG
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ULBM25
ULBM25
ASI10683
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SD1434
Abstract: 2sd1434
Text: SD1434 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1434 is a gold metallized RF power transistor designed for 12.5 V class-C UHF communication applications. The device utilizes emitter ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG
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SD1434
SD1434
2sd1434
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2n2484 NPN Transistor features
Abstract: 2N2484
Text: Philips Semiconductors Product specification NPN general purpose transistor FEATURES 2N2484 PINNING • Low current max. 50 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 2 base APPLICATIONS 3 collector, connected to the case emitter • General purpose switching and amplification
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2N2484
2n2484 NPN Transistor features
2N2484
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transistor et 454
Abstract: B686 2SD774 pt 4115 T1IU 2SB734 K0559
Text: Silicon Transistor 2SD774 N PN i + 9 IJ =1 V h NPN Silicon Epitaxial Transistor Audio Frequency Power Am plifier * M S /P A C K A G E DIMENSIONS Unit •mm 0 2SB734 t ^ > 7"U > > ? ') T l i f f l t i i t . < . S B tE T 'to P t = 1.0 W, V ceo = 50 V * & * * * * £ * & /A B S O L U T E M A XIM U M RATINGS {Ta = 25 X )
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2SD774
2SB734
transistor et 454
B686
2SD774
pt 4115
T1IU
K0559
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1b50a
Abstract: diode T35 DI 380 Transistor T35 diode D64EV6 Transistor AC 188 mrc 100a
Text: 7294621 POWEREX INC 1 ^ 1 7 2 ^ 4 ^ .5 1 m / w w O O O S lt.7 1 "7 ~ ~ 3 3 ~ 3 S " D64EV x Powerex, Inc., Hillis Street, Ybungwood, Pennsylvania 15697 412 925-7272 Fast Switching Single Darlington Transistor Module 50 Amperes 500-600-700 Volts Description
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00021b?
D64EV
Ampere00
1b50a
diode T35
DI 380 Transistor
T35 diode
D64EV6
Transistor AC 188
mrc 100a
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BUV20
Abstract: No abstract text available
Text: MOTOROLA Order this document by BUV20/D SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.
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BUV20/D
BUV20
BUV20
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