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    TRANSISTOR K14A55D Search Results

    TRANSISTOR K14A55D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

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    transistor K14A55D

    Abstract: No abstract text available
    Text: TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original     		TK14A55D transistor K14A55D PDF

    K14A55D

    Abstract: TK14A55D transistor K14A55D
    Text: TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original     		TK14A55D K14A55D TK14A55D transistor K14A55D PDF

    k14a55

    Abstract: K14A55D TK14A55D transistor K14A55D
    Text: TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original     		TK14A55D k14a55 K14A55D TK14A55D transistor K14A55D PDF

    K14A55D

    Abstract: TK14A55D
    Text: TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original     		TK14A55D K14A55D TK14A55D PDF

    K14A55D

    Abstract: TK14A55D transistor K14A55D
    Text: TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)


    Original     		TK14A55D K14A55D TK14A55D transistor K14A55D PDF