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    TRANSISTOR K2847 Search Results

    TRANSISTOR K2847 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    Untitled

    Abstract: No abstract text available
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.1 High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current


    Original     		PDF 2SK2847

    k2847

    Abstract: TOSHIBA K2847 2sk2847 transistor k2847 2SK2847(F)
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2847 k2847 TOSHIBA K2847 2sk2847 transistor k2847 2SK2847(F)

    TOSHIBA K2847

    Abstract: No abstract text available
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2847 TOSHIBA K2847

    k2847

    Abstract: toshiba k2847 transistor Toshiba k2847 K284 2sk2847 transistor k2847 toshiba transistor k2847
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2847 k2847 toshiba k2847 transistor Toshiba k2847 K284 2sk2847 transistor k2847 toshiba transistor k2847

    TOSHIBA K2847

    Abstract: K2847 2SK2847 transistor Toshiba k2847 transistor k2847 toshiba transistor k2847
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2847 TOSHIBA K2847 K2847 2SK2847 transistor Toshiba k2847 transistor k2847 toshiba transistor k2847

    TOSHIBA K2847

    Abstract: k2847
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2847 TOSHIBA K2847 k2847