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    TRANSISTOR K2847 Search Results

    TRANSISTOR K2847 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

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    Untitled

    Abstract: No abstract text available
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.1 High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current


    Original     		2SK2847 PDF

    k2847

    Abstract: TOSHIBA K2847 2sk2847 transistor k2847 2SK2847(F)
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2847 k2847 TOSHIBA K2847 2sk2847 transistor k2847 2SK2847(F) PDF

    TOSHIBA K2847

    Abstract: No abstract text available
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2847 TOSHIBA K2847 PDF

    k2847

    Abstract: toshiba k2847 transistor Toshiba k2847 K284 2sk2847 transistor k2847 toshiba transistor k2847
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2847 k2847 toshiba k2847 transistor Toshiba k2847 K284 2sk2847 transistor k2847 toshiba transistor k2847 PDF

    TOSHIBA K2847

    Abstract: K2847 2SK2847 transistor Toshiba k2847 transistor k2847 toshiba transistor k2847
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2847 TOSHIBA K2847 K2847 2SK2847 transistor Toshiba k2847 transistor k2847 toshiba transistor k2847 PDF

    TOSHIBA K2847

    Abstract: k2847
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2847 TOSHIBA K2847 k2847 PDF