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    TRANSISTOR K30A Search Results

    TRANSISTOR K30A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K30A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor K30A

    Abstract: K30A06J TK30A06J3 K30A06J3 k30a06 k30a TC5080
    Text: TK30A06J3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSⅢ TK30A06J3 Motor Drive Application Unit: mm Load Swithch Application Chopper Regulator and DC−DC Converter Application  Low drain-source ON resistance: RDS (ON) = 19 mohm (typ.)


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    TK30A06J3 transistor K30A K30A06J TK30A06J3 K30A06J3 k30a06 k30a TC5080 PDF

    K30A06J3

    Abstract: TK30A06J3A toshiba K30a06j3 k30a06 transistor K30A K30A06J TK30A06J3 K30A06J3A tk30a tk30a06
    Text: TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSⅢ TK30A06J3A Switching Regulator Applications z Unit: mm Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) z High forward transfer admittance: |Yfs| = 34 S (typ.) z Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


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    TK30A06J3A K30A06J3 TK30A06J3A toshiba K30a06j3 k30a06 transistor K30A K30A06J TK30A06J3 K30A06J3A tk30a tk30a06 PDF

    3225 k275

    Abstract: 4032 K275 VARISTOR k275 3225 VARISTOR k275 diode k275 4032 07 k275 varistor varistor s20 k320 cu3225 k275 varistor s10 k275 Siemens varistor family
    Text: Contents Type Survey 5 8 General Technical Information 15 Selection Procedure 35 Application and Design Examples 51 Quality 79 SMD Varistors 89 Disk Varistors 115 Block Varistors Strap Varistors 161 167 PowerDisk Arrester Blocks 171 173 Derating Curves V/I Characteristics


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    4032 K275

    Abstract: 3225 k275 VARISTOR k275 VARISTOR k275 3225 3225 k50 varistor diode k275 4032 cu3225 k275 07 k275 varistor VARISTOR S14 K275 VARISTOR s07 K20
    Text: Contents Type Survey 5 8 General Technical Information 15 Selection Procedure 35 Application and Design Examples 51 Quality 79 SMD Varistors 89 Disk Varistors 115 Block Varistors Strap Varistors 161 167 PowerDisk Arrester Blocks 171 173 Derating Curves V/I Characteristics


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    VARISTOR k275

    Abstract: capacitor S14 k275 varistor s14 k420 varistor k35 S14 K275 k275 VDR SURGE ARRESTER EPCOS 230 07 0 capacitor S14 k275 08 18 07 k275 varistor VARISTOR s14 K30
    Text: US_aussen_BD.qxd 20.12.2007 13:33 Uhr Seite 1 EPCOS Data Book 2008 SIOV Metal Oxide Varistors b y E P C O S A G • C o r p o r a t e C e n t e r Edition 11/2007 · Ordering No. EPC:62006-7600 · Printed in Germany · DB 11078. 2008 P u b l i s h e d SIOV Metal Oxide Varistors


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    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    transistor k117

    Abstract: transistor k363 K369 k117 transistor transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor
    Text: 10-1 Small Signal Transistors Mini-Package Type •c (m A ) f j T Y P . (M IN ) V C E (sat) M A X . hFE PC (mW) CCE IV ) >C im A ) ‘c IV ) im A ) !8 Im A ) (M Hz) V CE (V ) !C Im A ) 2SA 1048 2 SC 2 4 5 8 50 150 200 70 ~ 4 0 0 /7 00 6 2 0 .3 /0 .2 5 100


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    2SC2458 2SC2459 2SC2710 2SC3267 2SC3378 2SC3488 75393P 75393S 75393F transistor k117 transistor k363 K369 k117 transistor transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF