Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR KTC3198 Search Results

    TRANSISTOR KTC3198 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KTC3198 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    NPN Bipolar Transistor

    Abstract: KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G
    Text: KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package


    Original     		PDF KTC3198-O/Y/GR/BL C/10s 195mg S1405004 NPN Bipolar Transistor KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3198A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2010. 1. 28 Revision No : 1 1/3


    Original     		PDF KTC3198A

    KTA1266

    Abstract: KTA1266GR kta1266y
    Text: KTA1266 -0.15A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92 Excellent hFE Linearity Low Noise Complementary to KTC3198 CLASSIFICATION OF hFE 1


    Original     		PDF KTA1266 KTC3198 KTA1266-O KTA1266-Y KTA1266-GR 18-Dec-2012 -150mA -100mA, -10mA KTA1266 KTA1266GR kta1266y

    transistor KTC3198

    Abstract: KTC3198 KTA1266 ktc3198 transistor KTA1266. transistor ktc3198 gr kta1266 Y
    Text: SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N Complementary to KTA1266.


    Original     		PDF KTC3198 150mA KTA1266. 100mA, 30MHz transistor KTC3198 KTC3198 KTA1266 ktc3198 transistor KTA1266. transistor ktc3198 gr kta1266 Y

    KTA1266

    Abstract: KTA1266 GR transistor KTC3198 KTC3198 Transistor KTA1266
    Text: SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌExcellent hFE Linearity : hFE 2 =80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N ᴌComplementary to KTC3198.


    Original     		PDF KTA1266 -150mA KTC3198. KTA1266 KTA1266 GR transistor KTC3198 KTC3198 Transistor KTA1266

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KTC3198 TRANSISTOR NPN 1.EMITTER FEATURES z General Purpose Switching Application z Complementary to KTA1266. 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF KTC3198 KTA1266. 150mA 100mA

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE 2 =80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N Complementary to KTC3198.


    Original     		PDF KTA1266 -150mA KTC3198. Temperat50

    KTC3198

    Abstract: transistor KTC3198 KTC3198 transistor KTA1266 GR 41BL KTA1266 xk30
    Text: SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌExcellent hFE Linearity : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N ᴌComplementary to KTA1266.


    Original     		PDF KTC3198 150mA KTA1266. 270Hz KTC3198 transistor KTC3198 KTC3198 transistor KTA1266 GR 41BL KTA1266 xk30

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B C Excellent hFE Linearity A : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=0.2dB(Typ.). f=(1kHz).


    Original     		PDF KTA1266L. KTC3198L 150mA 150mA 100mA, 30MHz 100Hz,

    KTC3198

    Abstract: KTC3198GR ktc3198-y
    Text: KTC3198 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE  TO-92 V BR CBO=60V CLASSIFICATION OF hFE (1) Product-Rank KTC3198-O KTC3198-Y KTC3198-GR


    Original     		PDF KTC3198 KTC3198-O KTC3198-Y KTC3198-GR 150mA 100mA, 21-Feb-2014 30MHz KTC3198 KTC3198GR ktc3198-y

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTA1266 TRANSISTOR PNP TO-92 FEATURES z Excellent hFE Linearity z Low Noise z Complementary to KTC3198 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)


    Original     		PDF KTA1266 KTC3198 -150mA -100mA, -10mA

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3198A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.). at f=1kHz.


    Original     		PDF KTC3198A 150mA KTA1266A. 100mA, 30MHz

    transistor KTC3198

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.). at f=1kHz.


    Original     		PDF KTC3198 150mA KTA1266. 100mA, 30MHz transistor KTC3198

    KTC3198L

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B C ・Excellent hFE Linearity A : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise : NF=0.2dB(Typ.). f=(1kHz).


    Original     		PDF KTC3198L 150mA KTA1266L. 100mA, 30MHz 100Hz, KTC3198L

    KTC3198

    Abstract: transistor KTC3198 41BL h parameter ktc3198 gr
    Text: KTC3198 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 3.5±0.2 4.5±0.2 4.55±0.2 Features 1.27 Typ. 1: Emitter 2: Base 3: Collector 1.25±0.2 14.3±0.2 Collector-base voltage:


    Original     		PDF KTC3198 270Hz 01-Jun-2002 KTC3198 transistor KTC3198 41BL h parameter ktc3198 gr

    KTA1266

    Abstract: KTA1266 GR KTC3198 KTA1266 transistor transistor kta1266
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTA1266 TRANSISTOR PNP TO-92 FEATURES z Excellent hFE Linearity z Low noise z Complementary to KTC3198 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF KTA1266 KTC3198 -150mA -100mA, -10mA KTA1266 KTA1266 GR KTC3198 KTA1266 transistor transistor kta1266

    KTA1266

    Abstract: transistor KTC3198 KTC3198
    Text: SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE 2 =80(Typ.) at VCE=-6V, IC=-150mA N : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). K Complementary to KTC3198.


    Original     		PDF KTA1266 -150mA KTC3198. Temperat30 KTA1266 transistor KTC3198 KTC3198

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS L ID . KTC3198L SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER APPLICATION Package: TO-92 FEATURES * Excellent Hfe Linearity :Hfe 2 =100(Typ) atVce=6V, Ic= 150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mAH). 95(Typ).


    OCR Scan     		PDF KTC3198L 150mA. toKTA1266L 100uA 100uA 150mA 100mA 10VIeF 10VJe

    KTC3198

    Abstract: KTA1266
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3198 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I if e Linearity : hFE 2 =100(Typ.) a t V Ce =6V, Ic=150mA. • hFE(Ic-0.1mA)/liFE(Ic-2mA)=0.95(Typ.)


    OCR Scan     		PDF KTC3198 150mA. KTA1266 270Hz KTC3198 KTA1266

    KTC3198

    Abstract: KTA1266 transistor KTC3198
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3198 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I Linearity : hFE 2 =100(Typ.) at VCE=6V, Ic=150mA. : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.) • Low Noise : NF=ldB(Typ.) at f=lkHz.


    OCR Scan     		PDF KTC3198 150mA. KTA1266 270Hz KTC3198 KTA1266 transistor KTC3198