TRANSISTOR MARK CODE HF Search Results

TRANSISTOR MARK CODE HF Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR MARK CODE HF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
HA8050S Abstract: HA8550S Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6109 Issued Date : 1997.09.05 Revised Date : 2001.04.27 Page No. : 1/4 HA8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. Features • High DC Current Gain hFE=100~500 at IC=150mA	Original	HE6109 HA8550S HA8550S 150mA) HA8050S HA8050S	PDF
SG3081 Abstract: sg3081j uA701 TRANSISTOR SMD MARKING CODE 97 transistor smd marking 431 SMD Transistor 431 ac qml-38535 GDIP1-T16 MIL-PRF38535 6 pin TRANSISTOR SMD CODE PA Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 02-06-25 R. MONNIN Make correction to the HFE test as specified under table I. - ro THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV A A A A A A A A OF SHEETS	Original	SG3081J/883B SG3081 sg3081j uA701 TRANSISTOR SMD MARKING CODE 97 transistor smd marking 431 SMD Transistor 431 ac qml-38535 GDIP1-T16 MIL-PRF38535 6 pin TRANSISTOR SMD CODE PA	PDF
TRIAC BCR 16 km Abstract: PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04 Text: Part Numbers Part Numbers 1 to 2 Part No. Destination Thyristor and triac Part No. designation CR 8 K M -12 A BCR 8 C M -12 L A Power Transistor Product No. Designation Renesas Uniform Product Number Current ratings (Ex.) Version Commutation characteristics (Triac only)	Original	R07CS0003EJ0200 TRIAC BCR 16 km PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04	PDF
BC850 Abstract: BC849 BC846 BC848 "MARKING CODE P" BC846 SOT-23 bc847 BC856 BC860 mark 720 Text: UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES Suitable for automatic insertion in thick and thin-film circuits. Complement to BC856 … BC860 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted	Original	BC846/BC847/BC848/BC849/BC850 BC856 BC860 OT-23 BC846 BC847 BC850 BC848 BC849 BC850 BC849 BC846 "MARKING CODE P" BC846 SOT-23 BC856 BC860 mark 720	PDF
marking code P Abstract: BC849 bc848 BC850 Text: UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES Suitable for automatic insertion in thick and thin-film circuits. Complement to BC856 … BC860 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted	Original	BC846/BC847/BC848/BC849/BC850 BC856 BC860 OT-23 BC846 BC847 BC850 BC848 BC849 marking code P	PDF
BC850 Abstract: bc849 marking code P Text: UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES Suitable for automatic insertion in thick and thin-film circuits. Complement to BC856 … BC860 2 1 3 SOT-323 1: EMITTER 2: BASE 3: COLLECTOR	Original	BC846/BC847/BC848/BC849/BC850 BC856 BC860 OT-323 BC846 BC847 BC850 BC848 BC849 marking code P	PDF
212 s sot-23 Abstract: 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211 MMBFJ211 Text: J211 / J212 / MMBFJ211 / MMBFJ212 MMBFJ211 MMBFJ212 J211 J212 G S G S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient	Original	MMBFJ211 MMBFJ212 MMBFJ211 OT-23 212 s sot-23 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211	PDF
transistor j210 Abstract: 212 t sot-23 Text: G S G S TO-92 SOT-23 D Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from	Original	MMBFJ210 MMBFJ211 MMBFJ212 OT-23 transistor j210 212 t sot-23	PDF
L6 TRANSISTOR Abstract: transistor L6 Text: EML6 / UML6N Transistors General purpose transistor isolated transistor and diode EML6 / UML6N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver EMT5 1.6 0.5 1.0 0.5 0.5	Original	2SC5585 RB521S-30 200mA 200mA, 100MHz L6 TRANSISTOR transistor L6	PDF
Untitled Abstract: No abstract text available Text: EML4 / UML4N Transistors General purpose transistor isolated transistor and diode EML4 / UML4N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver EMT5 1.6 0.5 1.0 0.5 0.5	Original	2SC5585 RB521S-30 200mA, 100MHz	PDF
D9D TRANSISTOR Abstract: SOT-23 marking D9D HMBT8050 transistor d9d npn D9D D9D SOT D9D sot23 d9d marking code HMBT8550 sot-23 d9d Text: HI-SINCERITY Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current hFE=150-400 at IC=150mA	Original	HE6812 HMBT8050 HMBT8050 OT-23 150mA HMBT8550 183oC 217oC 260oC D9D TRANSISTOR SOT-23 marking D9D transistor d9d npn D9D D9D SOT D9D sot23 d9d marking code HMBT8550 sot-23 d9d	PDF
B9D TRANSISTOR Abstract: PNP Transistor b9d SOT-23 marking B9D transistor B9C HMBT8050 HMBT8550 B9C MARK B9C transistor sot-23 Marking B9C Text: HI-SINCERITY Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current: hFE=150-400 at IC=150mA	Original	HE6813 HMBT8550 HMBT8550 OT-23 150mA HMBT8050 183oC 217oC 260oC B9D TRANSISTOR PNP Transistor b9d SOT-23 marking B9D transistor B9C HMBT8050 B9C MARK B9C transistor sot-23 Marking B9C	PDF
1902 transistor Abstract: darligton power transistor darligton transistor HMPSA26 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6308-B Issued Date : 1992.09.09 Revised Date : 2000.10.01 Page No. : 1/3 HMPSA26 NPN SILICON TRANSISTOR Description The HMPSA26 is designed for using in darligton transistor. Absolute Maximum Ratings • Maximum Temperatures	Original	HE6308-B HMPSA26 HMPSA26 1902 transistor darligton power transistor darligton transistor	PDF
1902 transistor Abstract: H2N3417 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267-B Issued Date : 1992.11.25 Revised Date : 2000.09.01 Page No. : 1/3 H2N3417 NPN SILICON TRANSISTOR Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.	Original	HE6267-B H2N3417 H2N3417 1902 transistor	PDF

1902 transistor Abstract: H2N6426 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6232-B Issued Date : 1998.01.09 Revised Date : 2000.09.15 Page No. : 1/3 H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C	Original	HE6232-B H2N6426 1902 transistor H2N6426	PDF
H2N6427 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.15 Page No. : 1/3 H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C	Original	HE6274-B H2N6427 H2N6427	PDF
1902 transistor Abstract: H2N5089 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6273-B Issued Date : 1993.12.08 Revised Date : 2000.09.15 Page No. : 1/3 H2N5089 NPN EPITAXIAL PLANAR TRANSISTOR Description Amplifier Transistor. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C	Original	HE6273-B H2N5089 1902 transistor H2N5089	PDF
HMPSA05 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6301-B Issued Date : 1992.09.09 Revised Date : 2000.10.01 Page No. : 1/4 HMPSA05 NPN SILICON TRANSISTOR Description Amplifier transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C	Original	HE6301-B HMPSA05 HMPSA05	PDF
HMPS6562 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6322-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS6562 PNP SILICON TRANSISTOR Description The HMPS6562 is designed for audio transistor. Absolute Maximum Ratings • Maximum Temperatures	Original	HE6322-B HMPS6562 HMPS6562	PDF
1902 transistor Abstract: 100MHZ HMPSA42 HMPSA92 Text: HI-SINCERITY Spec. No. : HE6333 Issued Date : 1992.11.18 Revised Date : 2001.05.01 Page No. : 1/3 MICROELECTRONICS CORP. HMPSA42 NPN EPITACIAL PLANAR TRANSISTOR Description The HMPSA42 is high voltage transistor. Features • High Collector-Emitter Breakdown Voltage	Original	HE6333 HMPSA42 HMPSA42 HMPSA92 1902 transistor 100MHZ HMPSA92	PDF
HMPSA43 Abstract: 100MHZ HMPSA93 Text: HI-SINCERITY Spec. No. : HE6334-B Issued Date : 1992.11.18 Revised Date : 2000.10.01 Page No. : 1/3 MICROELECTRONICS CORP. HMPSA43 NPN SILICON TRANSISTOR Description The HMPSA43 is high voltage transistor. Features • High Collector-Emitter Breakdown Voltage	Original	HE6334-B HMPSA43 HMPSA43 HMPSA93 100MHZ HMPSA93	PDF
SM4 buzzer Abstract: transistor 1 E 9 k Transistor code iz ST108 buzzer smt Text: Composite Transistor Transistor Unit •P iezo electric Buzzer Driver R e s is ta n c e P a rt N o. RU101 Ri v a lu e r 2 k O (k n ) 10 180 VcES lc Pd (V ) (m A ) (m W ) 35 50 200 hpE M in . Typ. 150 330 M ax. 820 V CE lc (V ) (m A ) 3 50 •P ro d u c t Designation	OCR Scan	RU101 RU901 SM4 buzzer transistor 1 E 9 k Transistor code iz ST108 buzzer smt	PDF
marking code H.5 Sot 23-5 Abstract: Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47 Text: t v . • i1',!ï î .1l II^I[I:î ¡ e i w O A ln i“ ' ¡1 à f;] m Semiconductor, Inc. TC47 Series VOLTAGE REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION ■ ■ The TC47 Series are CMOS voltage regulator controller ICs for use with an external power transistor. They feature	OCR Scan	TC4730A) 100mA: OT-23-5 100mA marking code H.5 Sot 23-5 Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47	PDF
BT816 Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728 Text: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded	OCR Scan	mm/13" O-92S) BT816 TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728	PDF

TRANSISTOR MARK CODE HF Search Results

TRANSISTOR MARK CODE HF Result Highlights (5)

TRANSISTOR MARK CODE HF Datasheets Context Search

HA8050S

SG3081

TRIAC BCR 16 km

BC850

marking code P

BC850

212 s sot-23

transistor j210

L6 TRANSISTOR

Untitled

D9D TRANSISTOR

B9D TRANSISTOR

1902 transistor

1902 transistor

1902 transistor

H2N6427

1902 transistor

HMPSA05

HMPS6562

1902 transistor

HMPSA43

SM4 buzzer

marking code H.5 Sot 23-5

BT816