TRANSISTOR MARKING 3EM Search Results

TRANSISTOR MARKING 3EM Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR MARKING 3EM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc	Original	MMBTH10LT1, MMBTH10-4LT1	PDF
mps 1049 Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23 Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS	Original	MMBTH10LT1, MMBTH10-4LT1 mps 1049 JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23	PDF
transistor marking 3em Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2 Text: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS	Original	MMBTH10LT1, MMBTH10-4LT1 MMBTH10LT1/D transistor marking 3em MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2	PDF
transistor 3em Abstract: marking 3EM sot-23 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value	Original	OT-23 MMBTH10 100MHz transistor 3em marking 3EM sot-23	PDF
transistor marking 3em Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value	Original	OT-23 MMBTH10 transistor marking 3em	PDF
mmbth10 Abstract: transistor marking 3em TRANSISTOR NPN 3EM Text: MMBTH10 50 mA, 30 V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free SOT-23 DESCRIPTION The MMBTH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.	Original	MMBTH10 OT-23 MMBTH10 0078g 100MHz 01-June-2007 transistor marking 3em TRANSISTOR NPN 3EM	PDF
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882	PDF
JB marking transistor Abstract: transistor marking JB jb transistor transistor marking 3em JB SOT23 transistor transistor polar MPS-H11 JB MARKING SOT-23 TRANSISTOR NPN 3EM RB marking Text: MMBTH10LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 VHF/UHF Transistors ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo	Original	MMBTH10LT1 OT-23 100uA 1000MHz JB marking transistor transistor marking JB jb transistor transistor marking 3em JB SOT23 transistor transistor polar MPS-H11 JB MARKING SOT-23 TRANSISTOR NPN 3EM RB marking	PDF
Untitled Abstract: No abstract text available Text: Transistors SMD Type NPN Silicon VHF/UHF Transistor MMBTH10 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Ideal for Mixer and RF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 ● High Current Gain Bandwidth Product 0.4 3 2 +0.1 0.95-0.1	Original	MMBTH10 OT-23 100MHz	PDF
BC517 spice model Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information	Original	VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S	PDF
high voltage npn transistor SOT-89 Abstract: PNP TRANSISTOR SOT89 1a SOT89 135 SOT89 Text: 广东肇庆风华新谷微电子有限公司广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 SOT-89 NPN medium power transistor 三极管 FHBC868 Fearture 特征: •High current max. 1 A · Low voltage (max. 20 V).	Original	OT-89 FHBC868 FHBC869. 500mA 100mA high voltage npn transistor SOT-89 PNP TRANSISTOR SOT89 1a SOT89 135 SOT89	PDF
MARKING BL SOT89 Abstract: FHBCX56 BL SOT89 high voltage npn transistor SOT-89 sot-89 Marking BK MARKING BK SOT89 Text: 广东肇庆风华新谷微电子有限公司广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 SOT-89 NPN medium power transistor 三极管 FHBCX56 Fearture 特点: •High current max. 1 A ·Low voltage (max. 80 V).	Original	OT-89 FHBCX56 FHBCX515253. 150mA 500mA 500mA; MARKING BL SOT89 FHBCX56 BL SOT89 high voltage npn transistor SOT-89 sot-89 Marking BK MARKING BK SOT89	PDF
marking 3EM sot-23 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBTH10LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current ICM : 0.05	Original	OT-23 MMBTH10LT1 MMBTH10LT1 037TPY 950TPY 550REF 022REF marking 3EM sot-23	PDF
marking AL sot89 Abstract: AL SOT-89 16AL FHBCX53 Text: 广东肇庆风华新谷微电子有限公司广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 SOT-89 PNP medium power transistor 三极管 FHBCX53 Fearture 特点: For AF driver and output stages	Original	OT-89 FHBCX53 -150mA -500mA -50mA -500mA; marking AL sot89 AL SOT-89 16AL FHBCX53	PDF

transistor marking 3em Abstract: 556 ITT MMBTH10 sot-23 Marking YRE Text: MMBTH10 NPN 1.1 GHz RF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 FEATURES Designed for VHF/UHF Amplifier Applications EMITTER and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the	Original	MMBTH10 100mA OT-23 09-Feb-07 OT-23Package transistor marking 3em 556 ITT MMBTH10 sot-23 Marking YRE	PDF
MMBF4856 Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA	PDF
BC547 sot package sot-23 Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package	PDF
BC337 BC547 Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM	PDF
transistor marking code 3EM SOT-23 Abstract: NSVMMBTH10 MMBTH10LT1G MMBTH10-4LT1G transistor marking 3em transistor 3em Marking code mps Text: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6	Original	MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G AEC-Q101 OT-23 O-236) MMBTH10LT1/D transistor marking code 3EM SOT-23 NSVMMBTH10 MMBTH10LT1G transistor marking 3em transistor 3em Marking code mps	PDF
marking Specific Device Code Date Code sot-23 4l Abstract: transistor 3em Text: MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor NPN Silicon http://onsemi.com Features • S and NSV Prefixes for Automotive and Other Applications • Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable	Original	MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L AEC-Q101 OT-23 O-236) MMBTH10LT1/D marking Specific Device Code Date Code sot-23 4l transistor 3em	PDF
mmbth10lt1 Abstract: No abstract text available Text: MOTOROLA Order this document by MMBTH10LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 M o t o r o la P r e f e r r e d D e v ic e 2 EMITTER CASE 318-08, STY LE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emitter Voltage	OCR Scan	MMBTH10LT1/D MMBTH10LT1 OT-23 O-236AB) mmbth10lt1	PDF
transistor marking 3em Abstract: MMBTH10LT1 Text: MOTOROLA Order this document by MMBTH10LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit	Original	MMBTH10LT1/D MMBTH10LT1 OT-23 O-236AB) DiodesMMBTH10LT1/D transistor marking 3em MMBTH10LT1	PDF
Untitled Abstract: No abstract text available Text: PD - 94385A IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.	Original	4385A IRGB5B120KD O-220 O-220AB IRF1010	PDF
Untitled Abstract: No abstract text available Text: PD - 94385B IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.	Original	94385B IRGB5B120KD O-220 O-220AB O-220AB	PDF

TRANSISTOR MARKING 3EM Search Results

TRANSISTOR MARKING 3EM Result Highlights (5)

TRANSISTOR MARKING 3EM Datasheets Context Search

Untitled

mps 1049

transistor marking 3em

transistor 3em

transistor marking 3em

mmbth10

Y2 transistor

JB marking transistor

Untitled

BC517 spice model

high voltage npn transistor SOT-89

MARKING BL SOT89

marking 3EM sot-23

marking AL sot89

transistor marking 3em

MMBF4856

BC547 sot package sot-23

BC337 BC547

transistor marking code 3EM SOT-23

marking Specific Device Code Date Code sot-23 4l

mmbth10lt1

transistor marking 3em

Untitled

Untitled