Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR MARKING CODE G1 Search Results

    TRANSISTOR MARKING CODE G1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE G1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BC847B Transistors NPN General Purpose Transistor BC847B Features 1 BVCEO < 45V IC=1mA) 2) Complements the BC857B. External dimensions (Unit : mm) 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 Packaging type SST3 Marking G1F Code T116 Basic ordering unit (pieces) 3000


    Original
    BC847B BC857B. PDF

    BUL312FH

    Abstract: No abstract text available
    Text: BUL312FH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BUL312FH Marking BUL312FH Shipment Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 °C


    Original
    BUL312FH O-220FH BUL312FH PDF

    IBM 286 schematic

    Abstract: No abstract text available
    Text: BUL312FH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BUL312FH Marking BUL312FH Shipment Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 °C


    Original
    BUL312FH BUL312FH O-220FH IBM 286 schematic PDF

    BUL742C

    Abstract: No abstract text available
    Text: BUL742C HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BUL742C • ■ ■ ■ Marking BUL742C Package / Shipment TO-220 / Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED


    Original
    BUL742C O-220 O-220 BUL742C PDF

    BUl312

    Abstract: BUL312FH
    Text: BUL312FH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BUL312FH „ „ „ „ „ „ „ Marking BUL312FH Shipment Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED


    Original
    BUL312FH O-220FH BUl312 BUL312FH PDF

    c22e

    Abstract: Q62702-F944 transistor marking 550 g22E y21e QBF550 transistor BF 450
    Text: PNP Silicon RF Transistor ● For common emitter amplifier stages up to 300 MHz ● For mixer applications in AM/FM radios and VHF TV tuners ● Low feedback capacitance due to shield diffusion ● Controlled low output conductance BF 550 Type Marking Ordering Code


    Original
    Q62702-F944 OT-23 c22e Q62702-F944 transistor marking 550 g22E y21e QBF550 transistor BF 450 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan
    BFT93 Q62702-F1063 OT-23 235b05 G122211 900MHz 235fc PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 1= B Q62702-F1519 Ö II CO RBs LU II CM


    OCR Scan
    Q62702-F1519 OT-323 IS21el2 G12171D PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan
    900MHz Q62702-F1314 OT-23 Junctio30 Q122DÃ BFR181 IS21I2 E35bD5 PDF

    TRANSISTOR k 1254

    Abstract: No abstract text available
    Text: SIEMENS BF 771 NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration BF 771 RBs Q62702-F1225 1 =B Package II CO Marking 2= E


    OCR Scan
    Q62702-F1225 OT-23 fl535b05 G121707 TRANSISTOR k 1254 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 198W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 47kfl, R2 = 47kQ Ordering Code Pin Configuration WRs Q62702-C2283 1= B Package 2=E o Marking BCR 198W II CO


    OCR Scan
    47kfl, Q62702-C2283 OT-323 Thermal05 6E35b05 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 146 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=47kfl, R2=22kfl BCR 146 WLs 1 =B Q62702-C2260 Package 2=E It Pin Configuration CO Marking Ordering Code o Type


    OCR Scan
    47kfl, 22kfl) Q62702-C2260 OT-23 S35b05 012D753 fl235bG5 12075M PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking BF 2000W NDs Ordering Code Pin Configuration Q62702-F1772


    OCR Scan
    Q62702-F1772 OT-343 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 198 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=47kiî, R2=47ki2 Type Marking Ordering Code Pin Configuration BCR 198 WRs Q62702-C2266 1=B Package 3=C 2=E SOT-23


    OCR Scan
    47ki2) Q62702-C2266 OT-23 flE35b05 H35t05 DlS0fi43 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 562 PNP Silicon Digital Transistor » Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7kü, R2=4.7kiì Type Marking Ordering Code Pin Configuration BCR 562 XUs Q62702-C2356 1=B Package 2=E 3=C SOT-23


    OCR Scan
    Q62702-C2356 OT-23 a23SbOS G12CH03 QE35b05 PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BF 775W NPN Silicon RF Transistor • Especially suitable for TV-sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! 1= B Package CO O 1! Pin Configuration Q62702-F1520 LU Marking Ordering Code LOs II


    OCR Scan
    Q62702-F1520 OT-323 IS21el2 IS21/S 0235b05 Q1E17EE PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistor SMBTA 20 • High DC current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 20 s1C Q6800-A6477 B SOT-23 E C Maximum Ratings Parameter Symbol


    OCR Scan
    Q6800-A6477 OT-23 fi235b05 012250e fl235b05 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 119 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=4.7ki2 IO ­ nr T I Pin Configuration BCR 119 WKs 1= B Q62702-C2255 Package o II CO Marking Ordering Code LU II


    OCR Scan
    Q62702-C2255 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit >Built in bias resistor R-|=4.7kfl, R2=4.7kfl 13 ET Type Marking Ordering Code Pin Configuration BCR 512 XFs Q62702-C2445 1= B Package 2=E 3=C SOT-23


    OCR Scan
    Q62702-C2445 OT-23 023SbD5 G120a 015D677 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistor PZT 3906 • High DC current gain 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: PZT 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZT 3906


    OCR Scan
    Q62702-Z2030 OT-223 EHN00057 A235bG5 122M7C PDF

    mw 772

    Abstract: No abstract text available
    Text: SIEMENS BF 772 NPN Silicon RF Transistor • For application in TV-sat tuners Q62702-F1222 1 =C II RAs m BF 772 ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type Pin Configuration 3=B 4=E Package SOT-143


    OCR Scan
    Q62702-F1222 OT-143 IS21el2 fl235bG5 G151713 mw 772 PDF

    1207A

    Abstract: No abstract text available
    Text: SIEMENS BCR 166 PNP Silicon Digital Transistor *Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kfl, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings


    OCR Scan
    Q62702-C2339 OT-23 BE35b05 S35b05 fi235bD5 1207A PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4124 sZC Q68000-A8316 B SOT-23 E C Maximum Ratings


    OCR Scan
    SMBT4124 Q68000-A8316 OT-23 flE35bQ5 G12255b fiE35bOS D1EE557 235b05 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. BFS 17P MCs 1 =B Q62702-F940 II Pin Configuration CM Marking Ordering Code Package LU Type 3=C


    OCR Scan
    BFS17P Q62702-F940 OT-23 0535b05 fi235b05 500MHz flE35b05 PDF