transistor MJ 122
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF100R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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FF100R12KS4
FF100R12KS4
transistor MJ 122
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FF100R12KS4
Abstract: 600v 100a transistor MJ 122
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF100R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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FF100R12KS4
FF100R12KS4
600v 100a
transistor MJ 122
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transistor MJ 122
Abstract: MGY40N60D
Text: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY40N60D/D
MGY40N60D
MGY40N60D/D*
TransistorMGY40N60D/D
transistor MJ 122
MGY40N60D
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c 3421 transistor
Abstract: 010-0041 IC350 power IGBT HTGB MSAGA11F120D
Text: MSAGA11F120D WAFER LOT EVALUATION INTERNAL PROCESS SPECIFICATION IPS REV. 0, Approval _N/C_ QC LOT#:_ LOT DATE CODE:_ QUANTITY ISSUED:_ QUANTITY REQUIRED:_ SUMMARY MICROSEMI MSAGA11F120D data sheet REVISION:
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MSAGA11F120D
MSAGA11F120D
discretes\msae\MSAFX10N100AS
c 3421 transistor
010-0041
IC350
power IGBT
HTGB
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MGW20N120
Abstract: transistor d 1557 305 Power Mosfet MOTOROLA
Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW20N120/D
MGW20N120
MGW20N120/D*
TransistorMGW20N120/D
MGW20N120
transistor d 1557
305 Power Mosfet MOTOROLA
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Untitled
Abstract: No abstract text available
Text: GP1600FSS18-AAB GP1600FSS18-AAB Powerline N-Channel IGBT Module Advance Information DS5176-1.1 May 1999 The GP1600FSS18-AAB is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power
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GP1600FSS18-AAB
DS5176-1
GP1600FSS18-AAB
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MGY40N60D
Abstract: motorola 6810
Text: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY40N60D/D
MGY40N60D
IGBTMGY40N60D/D
MGY40N60D
motorola 6810
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BSM100GB120DLC
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GB120DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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BSM100GB120DLC
BSM100GB120DLC
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FF100R12KS4
Abstract: 600v 100a
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF100R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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FF100R12KS4
gate06
FF100R12KS4
600v 100a
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BSM100GB120DLC
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GB120DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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BSM100GB120DLC
BSM100GB120DLC
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PDF
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FF100R12KS4
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 100 R 12 KS4 Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FF100R12KS4,
FF100R12KS4
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Siren Sound Generator 5 sound
Abstract: police Siren Sound Generator sound siren police 5 tones 1167 police siren siren police HT84003 HT84006 HT84009 HT84012
Text: HT84XXX Magic VoiceTM Features • • • • • • • • • Operating voltage: 2.4V~5.0 V Programmable tone melody generator ADPCM, PCM synthesis Wide range of sample rate for voice synthesis Minimum sample rate step: 100Hz Voice melody mixed output
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HT84XXX
192sec
100Hz
P13Accel:
P14SirenOn:
P41SirenOff:
P23Accel:
P32Brake:
P25SirenOn:
Siren Sound Generator 5 sound
police Siren Sound Generator sound
siren police 5 tones
1167
police siren
siren police
HT84003
HT84006
HT84009
HT84012
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2SC3953-SPICE
Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Text: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f
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12A02CH-SPICE
12A02CH
12A02CH
2SB1205
2SB1205
2SC3953-SPICE
2sa1538 spice
2sc3953 spice
2SC5610
MJE-360
2SC4548
2sk4096
2SB631K
2SC5706 equivalent
2SC2911-SPICE
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em55
Abstract: 5551l EM55450 9944 ir receiver EMM55000 npn 8050 em55451 EM55000 EM55000-2 em58
Text: EM55000/S/L Series INTEGRATED DEVELOPMENT ENVIRONMENT USER’S GUIDE Doc. Version 5.0 Applicable to EM55000/S/L IDE Version 2.9 & later ELAN MICROELECTRONICS CORP. March 2009 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM.
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EM55000/S/L
EM55000/S/L
IRTX16
IRRX16
0000b
em55
5551l
EM55450
9944 ir receiver
EMM55000
npn 8050
em55451
EM55000
EM55000-2
em58
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Untitled
Abstract: No abstract text available
Text: U-series IGBT Modules 1,700 V Yasuyuki Hoshi Yasushi Miyasaka Kentarou Muramatsu 1. Introduction In recent years, requirements have increased for high voltage power semiconductor devices used in high voltage power converters such as industrial inverters.
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police Siren Sound Generator sound
Abstract: Siren Sound Generator circuit diagram Siren Sound Generator 5 sound Siren Sound Generator Siren Sound Generator 9 sound HT842 police siren HT84XXX siren police siren police 5 tones
Text: HT84XXX Magic VoiceTM Features • • • • • • • • Operating voltage: 2.4V~5.0 V Programmable tone melody generator ADPCM, µPCM, PCM synthesis Wide range of sample rate for voice synthesis Minimum sample rate step: 100Hz Voice melody mixed output
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HT84XXX
384sec
100Hz
P13Accel:
P14SirenOn:
P41SirenOff:
P23Accel:
P32Brake:
P25SirenOn:
police Siren Sound Generator sound
Siren Sound Generator circuit diagram
Siren Sound Generator 5 sound
Siren Sound Generator
Siren Sound Generator 9 sound
HT842
police siren
HT84XXX
siren police
siren police 5 tones
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Untitled
Abstract: No abstract text available
Text: Make sure the next Card you purchase has. PW-8X010P6, PW-8X030P6, PW-8X075P6 MAGNUM MOTOR DRIVE SERIES 75A, 30A, 10A 600V MAGNUM MOTOR DRIVES ® FEATURES • 600 VDC Drive for 270 VDC Motors • 10 Amps @25°C, 10 Amps @85°C • 30 Amps @25°C, 30 Amps @85°C
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PW-8X010P6,
PW-8X030P6,
PW-8X075P6
PW-8X075P6
1-800-DDC-5757
A5976
G-03/05-0
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TDA 5331
Abstract: tda 2222 t06 sot 23 TDA 7283 capacitor 224 BLV33 0049543 SOT147
Text: N AMER P H I L I P S / D I S C R E T E bTE D m bbSBIBl QDBñTñS 122 BLV33 IAPX V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended for use in linear v .h .f. amplifiers for television transmitters and transposers. Diffused emitter ballasting resistors and the application of gold sandwich
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bb53131
BLV33
7ZB3786
7Z83785
7Z83784
TDA 5331
tda 2222
t06 sot 23
TDA 7283
capacitor 224
BLV33
0049543
SOT147
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2SD1394
Abstract: 122OA
Text: SANYO SE MI CON DUCTOR CORP 15E I I 7Tl7Q7t DDDSDbS . 2SD1394 201OA r - 3 3 - a ? N P N Planar S ilicon D arlington Transistor D river A p p lica tion s 1220A Use: • Especially suited for use in switching of L load of motor driver, printer hammer driver, relay driver,etc.
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r-33-a?
60il0V
l00rasis
71T7G7b
2SD1394
2SD1394
122OA
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Untitled
Abstract: No abstract text available
Text: bb53T31 D05T740 OTT Philips Semiconductors APX ^roduc^pecificatlon VHF power transistor BLY92C/01 " " " " — • N A f1 E R p H IL IP S /]> IS C R E T E p PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,
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bb53T31
D05T740
BLY92C/01
-SOT122F
Lb53T31
00ET747
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RF POWER TRANSISTOR NPN vhf
Abstract: BLY92C ceramic capacitor 47 pf Z609 philips ferroxcube transistor 4312 philips Trimmer 60 pf
Text: P hilips Sem iconductors J’b53T31 0 0 5 Iì 7 4 Q GTT • A P X ^ductspecificatlon BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE bTE D PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,
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OT122F
PINNING-SOT122F
RF POWER TRANSISTOR NPN vhf
BLY92C
ceramic capacitor 47 pf
Z609
philips ferroxcube
transistor 4312
philips Trimmer 60 pf
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transistor tt 2222
Abstract: C7f TRANSISTOR BLY92C BLY92C/01 BLY92
Text: Philips Semiconductors b b S 3 T 3 1 Q 0 2 tì 7 4 0 CHT • A P X ^ u c ^ p e c m c a tfó n BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE b*lE » PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,
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BLY92C/01
OT122F
PINNING-SOT122F_
MBB012
transistor tt 2222
C7f TRANSISTOR
BLY92C
BLY92C/01
BLY92
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k104 transistor
Abstract: NMOS Transistor KA ir 119 e
Text: Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET_ BUK104-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general
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BUK104-50L/S
BUK104-50LP/SP
BUK104-50L
BUK104-50S
BUK1Q4-50L/S
BUK104-50L/S
k104 transistor
NMOS Transistor KA
ir 119 e
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW20N
120/D
20N120
MGW20N120/D
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