TRANSISTOR MJE 340 Search Results

TRANSISTOR MJE 340 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR MJE 340 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ikf68 Abstract: 1159m transistor 1002 rcx 1002 Text: MAX3640 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic	Original	MAX3640 test11M02 HDE113032 181E-017 HDE113032 ikf68 1159m transistor 1002 rcx 1002	PDF
BF265 Abstract: 29v33 Text: MAX3880 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic	Original	MAX3880 HDE113032 181E-017 HDE113032 BF265 29v33	PDF
7407N Abstract: kf 202 transistor 1251U diode d 01n Text: MAX3861 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic (PECL), and Low	Original	MAX3861 735E-018 231E-030 N102M052 DE0172 514E-018 DE0172 7407N kf 202 transistor 1251U diode d 01n	PDF
30A01M Abstract: No abstract text available Text: 30A01M SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 43f NF 1 IKF 70m NE 2 NR 1 IKR 30m NC 2 IRB 2m RE 300m XTB 0.8 XTI 3 VJE 700m TF 250p VTF 5 PTF VJC 600m XCJC 1 FC 500m AF 1 Temp = Date : Unit A A A A Ohm V sec V deg V Parameter	Original	30A01M 30A01M	PDF
gummel Abstract: MJE 340 transistor SPICE PARAMETER, sanyo, bipolar transistor Spice Parameter, Bipolar Transistor 2SC5566 Text: 2SC5566 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 650.0f NF 1 IKF 790.0m NE 2 NR 1 780.0m IKR NC 2 IRB 100.0m RE 21.00m XTB 1 XTI 3 VJE 680.0m TF 350p VTF 20 PTF VJC 600.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A	Original	2SC5566 gummel MJE 340 transistor SPICE PARAMETER, sanyo, bipolar transistor Spice Parameter, Bipolar Transistor 2SC5566	PDF
2SB631K Abstract: 2sb631* transistor Spice Parameter, 2N, Bipolar Transistor MJE-360 nc 555 2SB631K-SPICE Text: 2SB631K SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 195.0f NF 1 IKF 555.0m NE 2 NR 1 IKR 75.00m NC 2 IRB 20.00m RE 127.0m XTB XTI 3 VJE 700.0m TF 2n VTF 10 PTF VJC 550.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm	Original	2SB631K 2SB631K 2sb631* transistor Spice Parameter, 2N, Bipolar Transistor MJE-360 nc 555 2SB631K-SPICE	PDF
2SC3597-SPICE Abstract: 2SC3597 transistor mje 170 Text: 2SC3597 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 40f NF 1 IKF 700m NE 2 NR 1 IKR 210m NC 2 IRB 1.8m RE 155m XTB XTI 3 VJE 700m TF 140p VTF 5 PTF VJC 500m XCJC 1 FC 500m AF 1 Temp = Date : Unit A A A A Ohm default V sec	Original	2SC3597 2SC3597-SPICE 2SC3597 transistor mje 170	PDF
"Bipolar Transistor" Abstract: 2SC6080 MJE 1000n Text: 2SC6080 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 2.800p NF 1 IKF 10 NE 2 NR 1 IKR 2.4 NC 2 IRB 200.0m RE 17.00m XTB 2 XTI 3 VJE 685.0m TF 700p VTF PTF VJC 620.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm V sec	Original	2SC6080 "Bipolar Transistor" 2SC6080 MJE 1000n	PDF
2SC5706 equivalent Abstract: 2sc5706 2sc5706 equivalent transistor 2sc5706 transistor SPICE PARAMETER, sanyo, bipolar transistor 2SC570 2SC5706-SPICE Text: 2SC5706 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 650.0f NF 1 IKF 790.0m NE 2 NR 1 IKR 780.0m NC 2 IRB 100.0m RE 21.00m XTB 1 XTI 3 VJE 680.0m TF 350p VTF 20 PTF VJC 600.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A	Original	2SC5706 2SC5706 equivalent 2sc5706 2sc5706 equivalent transistor 2sc5706 transistor SPICE PARAMETER, sanyo, bipolar transistor 2SC570 2SC5706-SPICE	PDF
LED pspice model Abstract: TC227 CP12RL1 MAX3941 application Text: MAX3941 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic	Original	MAX3941 N102M024 DE0172 514E-018 DE0172 LED pspice model TC227 CP12RL1 MAX3941 application	PDF
SOT343 C5 Abstract: SPICE 2G6 START405 START405TR Text: START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V • TRANSITION FREQUENCY 42GHz • LOW CURRENT CONSUMPTION • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE START405TR	Original	START405 42GHz OT343 OT343 START405TR START405 500MHz-5GHz SOT343 C5 SPICE 2G6 START405TR	PDF
BF340 Abstract: SOT343 C5 IC 0829 START405 START405TR Text: START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V • TRANSITION FREQUENCY 42GHz • LOW CURRENT CONSUMPTION • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE START405TR	Original	START405 42GHz OT343 OT343 START405TR START405 500MHz-5GHz BF340 SOT343 C5 IC 0829 START405TR	PDF
MJE 340 transistor Abstract: Q62702-F1501 Text: BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code	Original	900MHz OT-343 Q62702-F1501 Aug-30-1996 MJE 340 transistor Q62702-F1501	PDF
transistor Bf 444 Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: \|S21E\|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA	Original	UPA801T NE856 100mA UPA801T 24-Hour transistor Bf 444 LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN S21E UPA801T-T1	PDF

MC7812 Abstract: MJ11016 equivalent equivalent of BS170 MJ11016 MC7812 equivalent ferroxcube P3C8 MC1391P MC7812 MOTOROLA 2N5337 MJL16218 Text: MOTOROLA Order this document by MJL16218/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJL16218* NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device POWER TRANSISTOR 15 AMPERES	Original	MJL16218/D MJL16218* MJL16218 MC7812 MJ11016 equivalent equivalent of BS170 MJ11016 MC7812 equivalent ferroxcube P3C8 MC1391P MC7812 MOTOROLA 2N5337	PDF
LB 1639 Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: \|S21E\|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA	Original	UPA801T NE856 100mA UPA801T LB 1639 BF 830 transistor UPA801T-T1-A S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem	PDF
transistor NEC D 882 p Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A Text: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP	Original	NE856 transistor NEC D 882 p transistor c 1349 Transistor BF 479 NE85630-T1-A	PDF
HBF4727A Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product	OCR Scan		PDF
LB 122 transistor To-92 Abstract: NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)	Original	NE856 NE85600 24-Hour LB 122 transistor To-92 NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635	PDF
NE856 Abstract: 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST rs e	Original	NE856 NE856 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600	PDF
973-120 Abstract: 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST	Original	NE856 NE856 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 NE85639R-T1 973-120 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006	PDF
EQUIVALENT FOR mjf18004 Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors	Original	MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004	PDF
BS170 MOTOROLA Abstract: MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 MJF18006 Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors	Original	MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* BS170 MOTOROLA MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 MJF18006	PDF
transistor 667 Abstract: No abstract text available Text: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2	OCR Scan	BFR93A BFT93. transistor 667	PDF

TRANSISTOR MJE 340 Search Results

TRANSISTOR MJE 340 Result Highlights (5)

TRANSISTOR MJE 340 Datasheets Context Search

ikf68

BF265

7407N

30A01M

gummel

2SB631K

2SC3597-SPICE

"Bipolar Transistor"

2SC5706 equivalent

LED pspice model

SOT343 C5

BF340

MJE 340 transistor

transistor Bf 444

MC7812

LB 1639

transistor NEC D 882 p

HBF4727A

LB 122 transistor To-92

NE856

973-120

EQUIVALENT FOR mjf18004

BS170 MOTOROLA

transistor 667